DIODE 4 Search Results
DIODE 4 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 4 Price and Stock
Lumberg Automation GDM 3011 J 6-48V RHP w/ DIODESensor Cables / Actuator Cables |
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GDM 3011 J 6-48V RHP w/ DIODE | 37 |
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Lumberg Automation GDM 3009 J W/IN4007 DIODE MESensor Cables / Actuator Cables |
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GDM 3009 J W/IN4007 DIODE ME | 4 |
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Lumberg Automation G 4 W 1 F 1N4004 DIODE MESensor Cables / Actuator Cables |
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G 4 W 1 F 1N4004 DIODE ME | 2 |
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Lumberg Automation GDM 2009 J W/1N4004 DIODE MESensor Cables / Actuator Cables |
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GDM 2009 J W/1N4004 DIODE ME |
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Lumberg Automation GM 209 NJ W/1N4004 DIODE MESensor Cables / Actuator Cables |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GM 209 NJ W/1N4004 DIODE ME |
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DIODE 4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no. |
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1n5408 | |
marking SAContextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1) |
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enn7029sbs806msbs006marking sa | |
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Contextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1) |
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enn7029sbs806msbs006 | |
NJW4710
Abstract: NJW4710VE1
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njw4710njw4710ve1200mhz500mhz+2 | |
NJW4710
Abstract: NJW4710VE1
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njw4710njw4710ve1200mhz500mhz+2 | |
SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
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smd4001-4007sr560do-27uf4004+10 | |
Thyristor ABB ys 150Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor |
OCR Scan |
thyristor abb ys 150 | |
6be3
Abstract: E12-70 general electric
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OCR Scan |
e12-7012-pink-5566be3+1 | |
1n4148sContextual Info: 1N 4148 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4148, and the |
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150mall4148do-341n4148s+5 | |
1N4148 SOD-80C
Abstract: 1N4148 SOD80C l4148 t 4148 diode
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150mado-351n4148od-80c+6 | |
transistor bu508afContextual Info: Products Search Home About Us Product News Application Message to Us Contact Us Diode Bridge | Superfast Diode | Ultrafast Diode | FRD Diode | STD Diode Products Category You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode |
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o-3pfa/sot-199/to-247fbu208abu208d2-16d3a+5 | |
semikron skiip 942Contextual Info: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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semikron skiip 942 | |
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Contextual Info: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode |
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wt-z108n-4137um | |
Scans-0017402
Abstract: general electric bulb thermometer pf 9sg
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34dk3k-55611-td378-1scans-0017402general electric+2 | |
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642 gh
Abstract: "642 GH" Diode c 642
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642 ghdiode c 642 | |
Skiip 942 gb 120 317 ctv f
Abstract: ctv circuit semikron skiip 942
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skiip 942 gb 120 317 ctv fctv circuitsemikron skiip 942 | |
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Contextual Info: SKiiP 1442 GAR 120 - 414 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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Semikron skiip 209
Abstract: 742 IC nf 742
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semikron skiip 209742 icnf 742 | |
DIODE S4 65
Abstract: gal 900 DIODE S4 38
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diode s4 65gal 900diode s4 38 | |
742 IC
Abstract: diode 742 nf 742
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742 icdiode 742nf 742 | |
DIODE S4 72
Abstract: dv 1602 SKIIP CASE S4 29-04-70
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igbt11rthjs10diode s4 72dv 1602+2 | |
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Contextual Info: SKiiP 402 GD 061 - 358 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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igbt11rthjs10 | |
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Contextual Info: IS455J IL08 * SIRICON PHOTO DIODE - TOP VIEW - 4 3 2 1 4 Vcc +5V CONSTANT VOLTAGE CIRCUIT PHOTO DIODE A 1 PHOTO DIODE B Io (CURRENT OUTPUT) CURRENT AMP 2, 3 GND |
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is455j | |
6BJ3
Abstract: E1270 6bj3 tube E12-70 I960 general electric
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e12-70k-5561i-td6bj3e1270+3 | |