Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 366 NM Search Results

    DIODE 366 NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 366 NM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2 Wavelength Laser Diode

    Abstract: diode 366 nm Toshiba TOLD9225M TOLD9225M 670NM Laser-Diode 7227 RITTAL laser diode toshiba 10mw 670nm
    Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-383-8406 TOSHIBA LASER DIODE TOLD9225M InGaAIP LD ? Lasing Wavelength: ? Optical Output Power: ? Operation Case Temperature: ? = 670nm typ. Po = 10mW (CW) Tc = -10~60?C Pin Connection


    Original
    old9225m670nm2331-s012 wavelength laser diode+7diode 366 nmtoshiba told9225mtold9225m670nm laser-diode7227 rittallaser diode toshiba10mw 670nm PDF

    670NM Laser-Diode

    Abstract: diode 366 nm ld 670nm
    Contextual Info: 435 Route 206 • P. O. Box 366 Newton, NJ 07860-0366 SALES 973 579-7227 FAX (973)300-3600 DL3149-055A RED LASER DIODE DL3149-055A is a 670nm (Typ.) Index guided AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by the use of a strained multiple quantum well


    Original
    dl3149-055a670nm6345-s01670nm laser-diode+2diode 366 nmld 670nm PDF

    photodiode

    Abstract: 1310nm photodiode photodiode with voltage output 2 Wavelength Laser Diode mitsubishi thyristors diode 366 nm ML725B8F AlGaAs laser diode photodiode dark current THORLABS PHOTODIODE
    Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 SALES 973-579-7227 FAX 973-300-3600 ML725B8F MITSUBISHI LASER DIODES DESCRIPTION ML725B8F is a AlGaAs laser diode which provides a stable, single transverse mode oscillation with emission wavelength of 1310nm and standard


    Original
    ml725b8f1310nm0280-s01photodiode+81310nm photodiodephotodiode with voltage output2 wavelength laser diodemitsubishi thyristorsdiode 366 nmalgaas laser diodephotodiode dark currentthorlabs photodiode PDF

    6347S

    Abstract: 670NM Laser-Diode DL3149-057 DL-3149-057
    Contextual Info: 435 Route 206 • P. O. Box 366 Newton, NJ 07860-0366 SALES 973 579-7227 FAX (973)300-3600 DL3149-057 Red Laser Diode FEATURES • Short wavelength: 670nm (Typ.) • Low threshold current: Ith = 25mA (Typ.) • High operating temperature: 5 mW at 60ºC • Small package: Ø5.6mm


    Original
    dl3149-057670nm6347-s016347s+2670nm laser-diodedl-3149-057 PDF

    pin diagram i3 processor

    Abstract: basics of intel i3 processor capacitor 2200 micro M pin configuration of i3 processor 400 mhz filter intel core i3 processor intel i3 intel pentium IV microprocessor pin diagram jtag mhz pentium II
    Contextual Info: MOBILE PENTIUM II PROCESSOR IN Micro-PGA AND BGA PACKAGES AT 400 MHz, 366 MHz, 333 MHz, 300PE MHz, AND 266PE MHz      Available at 400 MHz, 366 MHz, 333 MHz, 300PE MHz, and 266PE MHz  Fully compatible with previous Intel microprocessors — Binary compatible with all applications


    Original
    300pe266pe16-kbyte256-kbyte+10pin diagram i3 processorbasics of intel i3 processorcapacitor 2200 micro mpin configuration of i3 processor400 mhz filterintel core i3 processorintel i3intel pentium iv microprocessor pin diagramjtag mhzpentium ii PDF

    443BX

    Abstract: 245103 pbga-b615
    Contextual Info: MOBILE PENTIUM II PROCESSOR IN BGA PACKAGE AT 366 MHZ, 333 MHZ, 300PE MHZ, AND 266PE MHZ + + + Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz + — Binary compatible with all applications Supports the Intel Architecture with Dynamic Execution Integrated primary 16-Kbyte instruction


    Original
    300pe266pe16-kbyte256-kbyte+3443bx245103pbga-b615 PDF

    PPGA-B615

    Abstract: CKDM66-M Intel Mobile Celeron Processor BGA
    Contextual Info: MOBILE INTEL CELERON® PROCESSOR IN MICRO-PGA AND BGA PACKAGES AT 466 MHZ, 433 MHZ, 400 MHZ, 366 MHZ, 300 MHZ, AND 266 MHZ DATASHEET + Available at 266 MHz, 266 MHz at low voltage, 300 MHz, 333 MHz, 366 MHz, 400 MHz, 433 MHz, and 466 MHz + Supports Intel Architecture with


    Original
    16-kbyte128kbyteppga-b615ckdm66-m+1intel mobile celeron processor bga PDF

    Intel Mobile Celeron Processor BGA

    Abstract: ink cartridge chip block diagram of pentium D capacitor AA8 pentium II Sensor Cement Capacitor Swatch Group 443BX V0027-00
    Contextual Info: MOBILE PENTIUM II PROCESSOR IN BGA PACKAGE AT 366 MHz, 333 MHz, 300PE MHz, AND 266PE MHz + + + + Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz — Binary compatible with all applications Supports the Intel Architecture with Dynamic Execution Integrated primary 16-Kbyte instruction


    Original
    300pe266pe16-kbyte256-kbyte+9intel mobile celeron processor bgaink cartridge chipblock diagram of pentium dcapacitor aa8pentium iisensor cement capacitorswatch group443bxv0027-00 PDF

    400 mhz filter

    Abstract: diode t40 041H 440M 440MX 443BX pbga-b615 L-11117 245112 Mini-Cartridge
    Contextual Info: MOBILE CELERON PROCESSOR IN MICRO-PGA AND BGA PACKAGES AT 466 MHZ, 433 MHZ, 400 MHZ, 366 MHZ, 300 MHZ, AND 266 MHZ DATASHEET      Available at 266 MHz, 266 MHz at low voltage, 300 MHz, 333 MHz, 366 MHz, 400 MHz, 433 MHz, and 466 MHz Supports Intel Architecture with Dynamic


    Original
    16-kbyte128-kbyte400 mhz filterdiode t40+8041h440m440mx443bxpbga-b615l-11117245112mini-cartridge PDF

    PPT Diode specifications

    Abstract: 74AHCT Zytrex 74als power consumption
    Contextual Info: hflrex ZXS4AH CT ZX 74AH C T 365/367 sæ366/368 Hex Bus-Drivers with 3-State Outputs February 1985 OBJECTIVE SPECIFICATIONS Features D escription • Function, pin-out, speed and drive com patibility w ith 54/74A L S logic fam ily These high-speed Hex bus drivers are designed specifi­


    OCR Scan
    zx74ahct54/74als74ahct54ahct+3ppt diode specificationszytrex74als power consumption PDF

    Contextual Info: oatzloa7 oaa,oaQ KS54AHCT KS74AHCT 365/367 KS54AHCT KS74AHCT 366/368 Hex Bus-Drivers with 3-State Outputs 16 Dip Unit: mm These high-speed Hex bus drivers are designed specifically to improve both the performance and density of 3-state memory address drivers,


    OCR Scan
    ks54ahctks74ahct90-xo14-pin+316-pin20-pin24-pin PDF

    l 7251 3.1

    Abstract: ft03e
    Contextual Info: int ! MOBILE PENTIUM Il PROCESSOR IN BGA PACKAGE AT 366 MHZ, 333 MHZ, 300PE MHZ, AND 266PE MHZ Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz Fully compatible with previous Intel microprocessors Supports the Intel Architecture with Dynamic Execution


    OCR Scan
    300pe266pe16-kbyte256-kbyte+2l 7251 3.1ft03e PDF

    54HCT365

    Abstract: D547
    Contextual Info: Technical Data CD54/74HC365, CD54/74HCT365 CD54/74HC366, CD54/74HCT366 File N um b er 1 5 3 9 High-Speed CMOS Logic FUNCTIONAL DIAGRAM AND TERMINAL ASSIGNMENT Hex Buffer/Line Driver, 3-State Non-Inverting and Inverting Type Features: • B uffe red Inputs


    OCR Scan
    cd54/74hc365cd54/74hct365cd54/74hc366cd54/74hct366+5hct36554/74ht365/36654hct365d547 PDF

    V23826-H18-C

    Abstract: V23826-H18-C316 V23826-H18-C356 V23826-H18-C366 V23826-H18-C376 SM TX 433 stm4 infineon 433 mhz ask transmitter module
    Contextual Info: V23826-H18-C * (3.3V) Single Mode 622 MBd ATM/SDH/SONET 1x9 Transceiver Extended Temperature Range (–40°C to 85°C) 11x 4.875 .192 2 product label M .8 20.32 Z 1 3 (15.88–0.5) .625–.02 .8 (1.9–0.1) 2x .075–.004 (2.54) .1 .5 .8 (2.54) .1 20.32 (2.05–0.05)


    Original
    v23826-h18-cd-13623v23826-h18-c316v23826-h18-c356+5v23826-h18-c366v23826-h18-c376sm tx 433stm4 infineon433 mhz ask transmitter module PDF

    L6597-401

    Abstract: L6594-402 L6598 L6595-402 L6593-402 L6593
    Contextual Info: MiCM PIN DIODE SW ITCH ML 6590-400 Series MICROW AVE CO M M O N MODULE SP4T REFLECTIVE SW ITCH DESCRIPTION The M /A-COM Ltd range of M iCM SP4T switches are m iniaturised carrier mounted com ponents providing high isolation, low loss and fast switching speed in the frequency range 0.5 to 18 GHz. Devices provide for direct


    OCR Scan
    l6597-401l6594-402l6598l6595-402+2l6593-402l6593 PDF

    mobile MOTHERBOARD CIRCUIT diagram

    Abstract: 8080 intel microprocessor pin diagram pcb diagram of mini ups system DIODE D29 -08 humidity sensor philips H1 Intel Pentium 4 Processor instruction set INTEL PENTIUM PROCESSOR MOBILE MODULE 243190 mobile circuit diagram Intel Mobile Celeron Processor BGA
    Contextual Info: MOBILE PENTIUM II PROCESSOR IN MINI-CARTRIDGE PACKAGE AT 366 MHZ, 333 MHZ, 300PE MHZ , AND 266PE MHZ + + + Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz + — Binary compatible with all applications Supports the Intel Architecture with Dynamic


    Original
    300pe266pe16-kbyte256-kbyte+10mobile motherboard circuit diagram8080 intel microprocessor pin diagrampcb diagram of mini ups systemdiode d29 -08humidity sensor philips h1intel pentium 4 processor instruction setintel pentium processor mobile module243190mobile circuit diagramintel mobile celeron processor bga PDF

    mobile MOTHERBOARD CIRCUIT diagram

    Abstract: 443BX jtag mhz pcb diagram of mini ups system pentium II PENTIUM PROCESSOR MOBILE MODULE
    Contextual Info: MOBILE PENTIUM II PROCESSOR IN MINI-CARTRIDGE PACKAGE AT 400 MHZ, 366 MHZ, 333 MHZ, 300PE MHZ, AND 266PE MHZ DATASHEET      Available at 400 MHz, 366 MHz, 333 MHz, 300PE MHz, and 266PE MHz  Fully compatible with previous Intel microprocessors — Binary compatible with all applications


    Original
    300pe266pe16-kbytemobile motherboard circuit diagram+5443bxjtag mhzpcb diagram of mini ups systempentium iipentium processor mobile module PDF

    NX8563 Series

    Abstract: thermistor 517 NX8563 NX8563LB NX8563LF 160832
    Contextual Info: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode


    Original
    nx856314-pinnx8563 seriesthermistor 517+3nx8563lbnx8563lf160832 PDF

    10 gb laser diode

    Abstract: upc 577 TLD 521 NX8560SJ electroabsorption
    Contextual Info: PRELIMINARY DATA SHEET NEC's EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS NX8560SJ Series FEATURES DESCRIPTION • INTEGRATED ELECTRO-ABSORPTION MODULATOR NEC's NX8560SJ Series is an Electro-Absorption EA Modulator and wavelength monitor intergraded, 1550 nm Multiple


    Original
    nx8560sjul158110 gb laser diodeupc 577+2tld 521electroabsorption PDF

    FGA10

    Abstract: THORLABS FGA10 InGaAs photodiode spectral response InGaAs photodiode photodiode bias circuit C1012 1800nm Thorlabs PHOTODIODE FGA10 photodiode InGaAs NEP
    Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode High Speed The FGA10 is a high-speed InGaAs photodiode with a spectral response from 700nm to 1800nm. This photodiode has a PIN structure that provides fast rise and fall times with a bias of 5V.


    Original
    fga10700nm1800nm900nm+12700-1800nm100na35/fbw2234-s01thorlabs fga10ingaas photodiode spectral responseingaas photodiodephotodiode bias circuitc1012thorlabsphotodiode fga10photodiode ingaas nep PDF

    FDS1010

    Abstract: FDS010 PDA155 Thorlabs FDS100 circuit FDS100 FDS100 RlOAD THORLABS PHOTODIODE PDA255 PDA400
    Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDS1010 Si Photodiode -Large Active Area -Low Capacitance Electrical Characteristics Spectral Response: Active Area: Rise/Fall Time RL=50Ω : Bandwidth (RL=50Ω, -3dB,5V):


    Original
    fds1010900nm400-1100nm600na+12375pf35/fbwfds010fds100pda55pda155thorlabsfds100 circuitfds100 rloadthorlabs photodiodepda255pda400 PDF

    D400F

    Abstract: D400FC photodiode ge FGA10 FGA03PT THORLABS FGA10 PDA255 PDA400 Ge detector Thorlabs
    Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode -Large Active Area -Low Capacitance 0.010 Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω : Cut Off Frequency (50Ω, 3V):


    Original
    fdg05980nm800-1800nm220ns+133000pf30awgfga10fga03ptfga03pt/fcd400fcd400fphotodiode gethorlabs fga10pda255pda400ge detectorthorlabs PDF

    18KHZ

    Abstract: SIM75D12SV1 vvvf motor
    Contextual Info: SIM75D12SV1 Preliminary “HALF-BRIDGE” IGBT MODULE VCES = 1200V Ic = 75A VCE ON typ. = 2.6V Features Applications ▪ Smarted NPT Technology Design ▪ AC & DC Motor controls ▪ 10µs Short circuit capability ▪ VVVF inverters ▪ Low turn-off losses


    Original
    sim75d12sv118khzvvvf motor PDF

    D400F

    Abstract: D400FC FGA04 FGA10 photodiode responsivity 1550nm with FC connector photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth Photodiode, 1550nm NEP THORLABS FGA10 1550nm photodiode 2GHz
    Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA04 InGaAs Photodiode High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Connector Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω :


    Original
    fga041550nm800-1700nm35/fbw+103154-s01d400fcfga10d400fphotodiode responsivity 1550nm with fc connectorphotodiode responsivity 1550nm 2photodiode 1550nm bandwidthphotodiode, 1550nm nepthorlabs fga101550nm photodiode 2ghz PDF