DIODE 340 Search Results

TSP70

Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series

DIODE V10-20

Abstract: T1548 general electric EIA 6-8
Contextual Info: 6AF3 6AF3 ET-T1548 Page 1 7-J9 DIODE FOR TV DAMPING-DIODE APPLICATIONS TUBES DESCRIPTION AND RATING The 6AF3 is a miniature, heater-cathode type diode for service as the damp­ ing diode in the horizontal-deflection circuit of television receivers. It will

igbt driver 314

Abstract: Driver 314 SEMIKRON SKiiP 342 GD 314 driver semikron skiip 342 SKIIP342GD Driver 314 ctv
Contextual Info: SKiiP 342 GD 120 - 314 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

132-gd

Abstract: 132 gd 120 24v 125A IGBT Igbt 318
Contextual Info: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Contextual Info: SKiiP 402 GD 061 - 358 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

power Diode 800V 20A

Abstract: apt10035
Contextual Info: 1200V 2x40A APT40DQ120BCT APT40DQ120BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

RURG30120CC

Abstract: URG30120C
Contextual Info: RURG30120CC Data Sheet January 2000 File Number 3400.3 30A, 1200V Ultrafast Dual Diode Features The RURG30120CC is an ultrafast dual diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted

RHR30120

Abstract: RHR30120 datasheet RHRP30120 equivalent RHRP30120 TA49041
Contextual Info: RHRP30120 Data Sheet January 2000 File Number 3409.3 30A, 1200V Hyperfast Diode Features The RHRP30120 is a hyperfast diode with soft recovery characteristics trr < 65ns .It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

NX7300BA-CC

Abstract: NX7301BA-CC NX7302BA-CC NX7303BA-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX7300BA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NX7300BA-CC is a 1 310 nm Fabry-Perot FP laser diode coaxial module with single mode fiber. It has a Multiple Quantum Well (MQW) structure and a built-in InGaAs monitor photo diode.

Contextual Info: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

Diode 20A/30v

Abstract: SCHOTTKY 20A 40V Schottky Diode 40V 5A ZHCS1000 ZLLS1000 ZLLS1000TA ZLLS1000TC IR-1120
Contextual Info: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

frequency stability analysis colpitts oscillator

Abstract: phase detector 10khz Colpitts VCO design Colpitts colpitts oscillator LMH6624 LMK03000 LMX2531 LP5900 noise diode
Contextual Info: Local oscillator Characteristics and design considerations Varactor diode • Also named as variable capacitance diode • Diode capacitance changes with reverse bias • Used as a variable capacitor • A capacitor in parallel with an inductor forms a tank circuit

mosfet 600V 20A

Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Contextual Info: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

C-150

Abstract: IRFI840G IRGIB6B60KD PD944
Contextual Info: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

M02N60B

Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
Contextual Info: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated

420 Diode

Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

diode 10a 400v

Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGIB6B60KD ANSI PD-94427D
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576 IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: DSA15I45PA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15I45PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf

C-150

Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Contextual Info: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.