DIODE 328 Search Results

BAS19LT1G

Abstract: BAS21LT1 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 On semiconductor date Code sot-23
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features http://onsemi.com • Pb−Free Packages are Available HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21

hM sot-353

Abstract: SBAS21DW5T1G BAS19LT1G SBAS20LT1G SBAS21LT1G BAS21 SOT-23 SBAS21LT3G SOT23 Marking JX HM SOT23-3 bas21dw5t
Contextual Info: BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com Features HIGH VOLTAGE SWITCHING DIODE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique

pin configuration of IC 74138

Abstract: pin out diagram of 74138 ic
Contextual Info: 19-3476; Rev 2; 9/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the

pin out diagram of 74138 ic

Abstract: pin configuration of IC 74138 circuit diagram body thermistor 280542
Contextual Info: 19-3476; Rev 2; 9/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the

SCHOTTKY DIODE SOT-143

Abstract: DIODE MARKING s7 A1017
Contextual Info: Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099 S7

Contextual Info: BAS16 _ y \ _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a m icrom iniature plastic envelope. It is intended fo r high-speed switching in hybrid th ick and th in -film circuits.

BAS19L

Contextual Info: BAS19L, BAS20L, BAS21L, BAS21DW5 High Voltage Switching Diode Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant HIGH VOLTAGE SWITCHING DIODE • S and NSV Prefixes for Automotive and Other Applications

diode 1N5408 specifications

Abstract: 22-DIO4M-1N5408 45-DIO8P-1N5408 22-DIO4P-1N5408 45-DIO8M-1N5408 din 4007 DIODE IN 5408 22-DIO4E-1N5408 IN 4007 diodes diode IN 4007
Contextual Info: Diode Modules EMG .-DIO 1. Description Diode circuits carry out various tasks in electrical and, in particular, electronic control systems, such as: – Electrical decoupling of messages in alarm systems – Use as spark extinguishing diodes to limit surge

phoenix contact QUINT 40

Abstract: 1197X redundancy module quint-diode QUINT-DIODE/40
Contextual Info: Redundancy Module QUINT-DIODE/40 QUINT DIODE provides: • 100% decoupling of power supplies connected in parallel • Can be installed in potentially explosive areas • Load currents up to 60 A supported • Easy assembly by snapping onto the DIN rail 1. Short Description

agere photodiode

Abstract: pin photodiode 10 ghz IR photodiode 865 nm R2560A R2560A023
Contextual Info: Preliminary Data Sheet, Rev. 1 June 2001 R2560A High-Power 12 GHz Photodiode Description The R2560A incorporates a high-speed planar PIN diode to provide a highly reliable, high-power photodiode module. This module is well suited for receiver applications with optical preamplification. The diode

Contextual Info: Sensors Infrared light emitting diode, cast type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950 nm spectrum suitable for silicon detectors. Low cost and a wide radiation angle make it an ideal

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

Contextual Info: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser

sd060scu100

Contextual Info: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 328, Rev. - SHD116034A SHD116034B ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

Contextual Info: REFLECTIVE OBJECT SENSORS OrrOELECTRONICS OPB703W/OPB704W/OPB7Q5W PACKAGE DIMENSIONS — .420 10.67 — .328 (8.33) .062 (1.57) R NOM (El, (C)r .J I 4.5(114.30) DESCRIPTION The OPB7Û3W, OPB704W, and OPB705W consist of an infrared emitting diode and an NPN silicon

SHINDENGEN DIODE

Contextual Info: Surface Mounting Device '> 3 7 h y ^ — K tm x r ^ \ y -o m \ WÆ Schottky Barrier Diode v H iH DF20SC3L Twin Diode OUTLINE DIMENSIONS 30V 20A •S M D • T j 15CTC • e V F = 0 .4 5 V • P rrsm 7 7A 5 > ^ x ß ü E •S R æ s • D c / D c n y n —s>

DIODE s04 a

Abstract: smd code dn S06 SMD SMD Transistor 1f n08 SMD DIODE s04
Contextual Info: 1733 Reader's Spreadspg189-328:1570 Reader's Spreadspg189-328 1/27/09 4:44 PM Page 5 PMS 300 neg. Black neg. DN X diode terminator network EU features circuit protection • • • • Fast reverse recovery time • Fast turn on time Low capacitance • SMD packages

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

IN5639A

Abstract: diode LT 675 IN 407 IN6053 Zener diode IN5637A in5645a IN6036A IN5650A IN6055A IN6042A in6053a
Contextual Info: POWERZORB L13 Series 1.5KW Transient Absorption Zener Diode A range of unipolar Protection diodes in a hermetically sealed metal and glass D013 package. ; 1mS expo P max c o n t-

Super-247 Package

Abstract: IRG4PSC71UD
Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

diode marking code 201

Abstract: 1048 diode tvs
Contextual Info: TVS Diode Axial Leaded – 1500W > 1.5KE series 1.5KE Series RoHS Description The 1.5KE Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Uni-directional

Contextual Info: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —

Contextual Info: PD - 91682 International IQ R Rectifier IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

Contextual Info: TVS Diode Axial Leaded – 400W > P4KE series P4KE Series RoHS Description The P4KE Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Bi-directional Uni-directional