DIODE 3005 2 Search Results

diode e 1210

Contextual Info: LED Light Emiting Diode miniReel / w y . Order l ^ JJ Number 'v Color 0603 Size Red 79-3002 Yellow 79-3004 Green 79-3005 0805 Size Red 79-5002 Yellow Green 79-5005 1206 Size Red 79-6002 Yellow 79-6004 Green 79-6005 1210 Size Red 79-7002 Yellow 79-7004 Green

D557b

Abstract: OP235TX OPL800TXV 1381 E Trigger
Contextual Info: ¡0 OPTEK Product Bulletin OPL800TXV June 1993 Hi-Reliability Photologic Hermetic Sensors Type OPL8OOTXV Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted • 100% screened and quality conformance tested to Optek’s Hi-Rel program • Direct TTL/STTL interface

ee 3007

Contextual Info: <0 o p te k Product Bulletin OPL 8OOTXV June 1993 Hi-Reliability Photologic Hermetic Sensors Type OPL8OOTXV Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted • 100% screened and quality conformance tested to Optelis Hi-Rel program

RS 3005 CL

Abstract: E1 3009 LM119
Contextual Info: INCH-POUND MIL-M-38510/103H 18 February 2005 SUPERSEDING MIL-M-38510/103G 03 November 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON Reactivated after 18 February 2005 and may be used for either new or existing design acquisition.

103H transistor

Abstract: E1 3007 GDFP1-G10 MIL-M-38510 103H GDFP2-F16 e74 330 diode marking e41 RS 3005 CL LM119
Contextual Info: INCH-POUND MIL-M-38510/103H 18 February 2005 SUPERSEDING MIL-M-38510/103G 03 November 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON Reactivated after 18 February 2005 and may be used for either new or existing design acquisition.

ct pr 3004

Contextual Info: nwirw FIBRE OPTIC TRANSMITTER AND RECEIVER U a L l Y Wx JM MODULES TYPES FOXO/T-AND FOXO/R- FEATURES • fast rise time, high coupled power GaAIAs transmitter • high responsivity wide bandwidth transimpedance amplifier receiver • actively aligned within device

Contextual Info: 0 OPTEK Product Bulletin OPL800TXV June 1993 Hi-Reliability Photologic Hermetic Sensors Type OPL8OOTXV Features • 100% screened and quality conformance tested to Optek’s Hi-Rel program • Direct TTL/STTL interface • Hermetic, lensed TO-18 package

Contextual Info: INCH-POUND MIL-M-38510/1F 16 March 2005 SUPERSEDING MIL-M-38510/1E 1 June 1982 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, TTL, NAND GATES, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense.

DTC 304-2 user setting manual

Abstract: DTC 304-2 hd6433032 HD6433040 hd6413002 DTC 304-2 user manual H8/3039 H8/3048 HD6433041 HD64F3052
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

PS2501 optocoupler

Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
Contextual Info: A p p l i c at i o n N o t e AN 3005 Modeling phototransistor optocouplers using PSPICE simulation software CTR vs If by Van N. Tran Sample A B C D Staff Applications Engineer, CEL Opto Semiconductors Typically, an optocoupler is an optically-coupled isolator that uses a GaAs LED as a light source and a bipolar

rbc 630

Abstract: DIN 43650 c DIN 43650 280 490-440 732 384-001 HIRSCHMANN DIN 43650 3 pe 43650C 6 -HIRSCHMANN connector 300 series 933 023-100 HIRSCHMANN DIN 43650
Contextual Info: GDS/GDSN Series Industrial standard/DIN 43650-C Cable socket, self-assembly Product features • for miniature valves, for example electro-magnetic pneumatic valves Variations • contact arrangement according to DIN 43650-C contact distance 8 mm • contact arrangement according

IN2979

Abstract: IN2984 IN3044 IN3005 1n3020 zener diode IN2996 1N2980 1N2981 1N2983 1N2985
Contextual Info: Zener Type No. 1N 2979 1N 2980 1N2981 1N 2982 1N 2983 2N 2984 1N 2985 1N 2986 1N 2987 1N 2988 1N 2989 1N 2990 1N2991 1N 2992 1N 2993 1N 2994 1N 2995 1N 2996 1N 2997 1N 2998 1N 2999 1N 3000 1N3001 1N 3002 1N 3003 1N 3004 1N 3005 1N 3006 1N 3007 1N 3008 1N 3009

30 mhz power IGBT

Contextual Info: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: DFM400XXM65-K000 Fast Recovery Diode Module DS5806-1.0 November 2004 LN23657 . FEATURES Low Reverse Recovery Charge High Switching Speed KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 6500V 3.6V 400A 800A Low Forward Voltage Drop Isolated MMC Base plate With AIN Substrates

DIM800ECM33-F000

Contextual Info: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)*

170265-1

Abstract: 234XX
Contextual Info: VSR-Family AC-DC Converters <100 W Rugged Environment 60 W AC-DC Converters VSR-Family Single output • 110 V AC or 230 V AC input jumper selectable • 3750 Vrms input to output isolation • Wide power range up to 2 • P0 „„„ temporarily • Excellent line/load regulation

AC-DC RECTIFIER

Abstract: AC-DC Switching ic cmos 5772 optocoupler MTBF
Contextual Info: VSR-Family AC-DC Converters <100 W Rugged Environment 60 W AC-DC Converters VSR-Family Single output • • • • 110 V AC or 230 V AC input jumper selectable 3750 Vrms input to output isolation Wide power range up to 2 • Po nom temporarily Excellent line/load regulation

AN-3006

Abstract: qml-38535 54LVXC4245
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A 18 19 REV SHEET 1 2 3 4 5 PREPARED BY Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE

D5NM60

Abstract: p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60
Contextual Info: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw

d5nm60

Abstract: STP8NM60FP P8NM60 P8NM60FP STD5NM60 STD5NM60-1 STD5NM60T4 STP8NM60 D5NM6
Contextual Info: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw

maa 502

Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Contextual Info: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik

T0220

Abstract: D-PAK BUF654 DPAK TDI30 BUD630
Contextual Info: T em ic S e m i c o n d u c t o r s T02S2 DPAK T0251 DPAK T0220 Bipolar Power Transistors Maximum Ratings Part Number Plot at Tease W °c Electrical Characteristics k: VCES VCEG A V V tf at fis hpE k: A at Ic and Vce A ! v CEsat at Ic and hpE V V A i Package

FDMS8670S

Contextual Info: FDMS8670S N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5mΩ Features tm General Description „ Max rDS on = 3.5mΩ at VGS = 10V, ID = 20A The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and

APT45GP120B

Abstract: T0-247
Contextual Info: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency