DIODE 3001 Search Results

Photocathode

Abstract: intensifier XX1060 XX1210 XX1110 XX1190 cd 1191 XX1111 XX1112 XX1191
Contextual Info: Image intensifier tubes Single stage Type X X 1110 XX1111 XX 1190 X X 1191 XX 1200 XX 1201 Configuration Tetrode Tetrode Diode Diode Diode Diode Focusing method electrostatic Input face plate Fiber optics, flat 38 25 25 18 18 Glass Fiber optics Glass useful 9 in mm

marking v6 78 diode

Abstract: marking code V6 95 DIODE marking code V6 DIODE MARKING V18 SOD123 single zener diode marking V14 diode Marking code v3 v6 zener V6 marking code diode DZ23C10 vishay zener diode v6 77
Contextual Info: DZ23 Series VISHAY Vishay Semiconductors Dual Common-Cathode Zener Diodes Features • This diode is also available in other case styles and configurations including: the dual diode common cathode configuration with type designation AZ23, the single diode SOT-23 case with the type

MARKING V18 SOD123

Abstract: V18 marking MARKING V20 SOD123 marking code V6 95 DIODE
Contextual Info: DZ23 Series VISHAY Vishay Semiconductors Dual Common-Cathode Zener Diodes Features • This diode is also available in other case styles and configurations including: the dual diode common cathode configuration with type designation AZ23, the single diode SOT-23 case with the type

dz23c16-v

Abstract: DZ23C4V3-V BZX84C-V VISHAY marking v25 marking v6 zener diode DZ23C36-V marking V4 diode SOD 323 BZT52C-V DZ23C18-V DZ23B43-V
Contextual Info: DZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • This diode is also available in other case styles and configurations including: the dual diode common cathode configuration e3 with type designation AZ23, the single diode SOT-23 case with the type designation

BAT85 equivalent

Abstract: BAS85 BAT85 BAT85TR
Contextual Info: BAT85 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in the MiniMELF case

BAT85TR

Abstract: BAT-85Tap
Contextual Info: BAT85 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in the MiniMELF case

Contextual Info: 5082-3001 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: TheASI 5082-3001 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 200 V PDISS 250 mW @ TA = 25 °C TJ -65 °C to +200 °C

diode 5082-3001

Abstract: 5082-3001
Contextual Info: 5082-3001 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: TheASI 5082-3001 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 200 V PDISS 250 mW @ TA = 25 °C TJ -65 °C to +200 °C

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

D1N4446

Abstract: 1N4446 ITT diode 150D
Contextual Info: ITT SEfllCOND/ INTERflETA 50E D 4 b ö 5 ? ll 0003017 ÔÔT • ,T 1N4446 IS I ' o> - o q Silicon Epitaxial Planar Diode fast switching diode. r m ax.1.9^ ma x.1.9^ * This diode is also available in glass case DO-34 f C a thode Mark C a tho de M ark m a x .0.42 ?

Contextual Info: LM95245 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process Literature Number: SNIS148F LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm® BJT Beta Compensation Technology for 45nm

1n4448 itt

Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
Contextual Info: ITT S E n i C O N D / INTERPIETA SOE D 4b a a ? n o o o a a a i aoo • is i " r * Q 3 *o °i 1N4448 Silicon Epitaxial Planar Diode fast switching diode. This type in case DO-35 is also available to specification CECC 50.001.023 max. 1.90 This diode is also available in glass case DO-34

D1N4154

Abstract: 1N4154 ITT DIODE itt 1501
Contextual Info: I T T SEHICOND/ INTERISTA 50E D • 4 b ñ a ? l l 0 0 02 0 1 3 134 ■ IS I - T - c fS -o ^ 1N4154 Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in glass case DO-34 ¡ m ax.1.9^ m a x .1.9 Hr *O I a E C a tho de Cathode

Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

Contextual Info: BAS86-M Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

Contextual Info: BAS85 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

BAS86-GS08

Abstract: BAS86 BAT86 DO35
Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction e2 guard ring against excessive voltage, such as electrostatic discharges.

SOD80 diode Marking Code AA

Abstract: general semiconductor DIODE SOD80
Contextual Info: BAS86 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic

Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction e2 guard ring against excessive voltage, such as electrostatic discharges.

BAT41

Abstract: LL41 ll41 foot print
Contextual Info: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage,

Contextual Info: BAS86 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic

BAS85-GS18

Contextual Info: BAS85 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

Contextual Info: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage,

Contextual Info: BAS85 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges