DIODE 3 A 2000V Search Results

BOD 1-18 R

Abstract: kippdiode ABB BOD 1-17 r ABB bod 1-11 bod 1.08
Contextual Info: A S E A BROÙIN/ABB Kippdiode A3 SENICON DT- I - I 3 D DDDOen DD'Mfl3Gfl 1 Diode de retournement Breakover diode Vbo • 83D 0 0 2 1 9 Ibo Id Ih vH Iavm 1 ISM 25° C Tvj = 125°C 25°C 25° C Ta 50°C Tvj = 50° c dv/dt Ts Tvj RthJA Masse Fig. masse Typ/type

Contextual Info: 19-1836; Rev 3; 5/06 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted

Contextual Info: 19-1836; Rev 3; 5/06 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted

DNA30EM2200PC

Abstract: DNA30E2200PC DNA30E2200PZ
Contextual Info: DNA30E2200PC High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PC Backside: anode 1 3 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current

Contextual Info: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e

DNA30EM2200PZ

Contextual Info: DNA30EM2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30EM2200PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current

DNA30EM2200PZ

Abstract: DNA30E2200PZ
Contextual Info: DNA30E2200PA High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PA Backside: anode 1 3 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

TVR diode

Abstract: diode tvr 10 g Zener Diode Glass 50v Zener Diodes 300v s5688 diode 50000v diode identification
Contextual Info: 1. IDENTIFICATION SYSTEM 1.1 Z ener D iod es Example 1: U 1 Example 3: Z B 270 ©© © © © § Example 4: U 1 N © © D L 44 A ©©©© © © T . . . . . S (4). . . © . . R ectifiers S5688 J © . . . Specific application diode. (TVR: for televisions. TFR: for strobes.)

STPS1535CT

Abstract: 1535CT STPS1535CF MARKING CF TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE 1545ct 1545CF STPS1545CT
Contextual Info: STPS1535CT/CF STPS1545CT/CF POWER SCHOTTKY RECTIFIER . . . . VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE INSULATED PACKAGE : Insulating voltage = 2000V DC

Schottky Rectifier 250V

Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
Contextual Info: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V

E80276

Abstract: RM100D2Z-40
Contextual Info: MITSUBISHI DIODE MODULES RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100D2Z-40 • IF AV • VRRM Average forward current . 100A Repetitive peak reverse voltage . 2000V • DOUBLE ARMS • Insulated Type

Contextual Info: MITSUBISHI DIODE MODULES R M 1 5 T C - 4 0 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE j RM15TC-40 I • lo DC output c u rre n t.30A • VR R M Repetitive peak reverse voltage 2000V • 3 phase bridge • Insulated Type • UL Recognized

MP03HB260-20

Abstract: MP03XX280 MP03XX280-16 MP03XX280-18 MP03XX280-20
Contextual Info: MP03XX280 Series MP03XX280 Series Dual Diode Modules Replaces January 2000 version, DS5105-3.0 DS5105-4.0 July 2002 FEATURES KEY PARAMETERS • Dual Device Module VRRM 2000V ■ Electrically Isolated Package IFSM 6000A ■ Pressure Contact Construction IF AV (per arm)

unial

Abstract: DS5101-4 MP02XX175 MP02XX175-08 MP02XX175-10 MP02XX175-12 MP02X
Contextual Info: MP02XX175 Series MP02XX175 Series Dual Diode Modules Replaces January 2000 version, DS5101-4.0 DS5101-5.0 July 2002 FEATURES KEY PARAMETERS • Dual Device Module VRRM 2000V ■ Electrically Isolated Package IFSM 5625A ■ Pressure Contact Construction IF AV (per arm)

Contextual Info: SSM2308GEN N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive D Lower on-resistance 2000V ESD capability BV DSS 20V R DS ON 600mΩ 1.2A ID S SOT-23 G Description Power MOSFETs from Silicon Standard use advanced processing techniques to achieve the lowest possible on-resistance, resulting in an extremely efficient and

Contextual Info: 5Ë GEC P L E S S E Y S e p t e m b e r 1995 SE M IC OND UC TOR S DS4085-2.2 SV20 RECTIFIER DIODE APPLICATIONS • KEY PARAMETERS v RRM 2000V 220A ' A V 4000A ^F S M Rectification. f ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.

Contextual Info: PF20 Axial Leaded Hermetically Sealed High Voltage Fast Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 2000V IF = 100mA trr = 200nS IR = 0.25µA Very low reverse recovery time Glass passivated for hermetic sealing

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E B L ・ESD Protected 2000V. L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 H A 3 G ・Rugged and reliable.

Contextual Info: 3.3V CMOS OCTAL BUS IDT74LVCC3245A ADVANCE TRANSCEIVER WITH ADJUSTABLE INFORMATION OUTPUT VOLTAGE, 3-STATE OUT­ PUTS, 5 VOLT TOLERANT I/O FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0

mlp 836

Contextual Info: TQP4M3018 Preliminary data sheet Rev A SP3T High Power 2.6V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V

Contextual Info: SD-1000 1000W Single Output DC-DC Converter series Features : 1U low profile 41mm 3 High power density 10.7w/inch 2000VAC I/O Isolation Protections: Short circuit / Overload / Over voltage / Over temperature Output OK signal Built-in remote ON-OFF control

GPS SAW filter

Contextual Info: TQP4M3007 Preliminary data sheet Rev B SP3T High Power 2.6V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V

1000W boost converter

Abstract: DIAGRAM in 12v 1000w sd-1000l-24 SD-1000 1000W TRANSISTOR dc to dc converter 12v to 19v
Contextual Info: SD-1000 1000W Single Output DC-DC Converter series Features : 1U low profile 41mm 3 High power density 10.7w/inch 2000VAC I/O Isolation Protections: Short circuit / Overload / Over voltage / Over temperature Output OK signal Built-in remote ON-OFF control

Contextual Info: SD-1000 1000W Single Output DC-DC Converter ¡ ¡½ E ¡E ¡E ¡E ¡E ¡E ¡E ¡E ¡E ¡ E series Features : 1U low profile 41mm 3 High power density 10.7w/inch 2000VAC I/O Isolation Protections: Short circuit / Overload / Over voltage / Over temperature Output OK signal