DIODE 2J Search Results

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

T 4512 H diode

Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

MTX70A

Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Contextual Info: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35

DIODE AM MODULATOR

Abstract: DOUBLE BALANCED MODULATOR quad schottky diode array
Contextual Info: _PRELIMINARY SPECIFICATION NEC UHF MODULATOR DIODE QUAD ELECTRON DEVICE N D 4 8 7 R 2 -3 R UHF DOUBLE BALANCED MODULATOR SILICON EPITAXIAL SCHOTTKY BARRIER DIODE QUAD The N D 487R 2-3R is schottky barrier diode quad interconnected in ring con­

Contextual Info: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for

Contextual Info: 3A 10 0 V Diode 1/4 S M D Type : Type : NSD03A10 Nihon Inter Electronics Corporation Contraction: Surface Mounting,Diffusion-type Silicon Diode ± û.2 2j ffljfe : Application : Rectification of Power Sourses 0 ./& Í 7 .0 *z Ai 0 O 3 A T 3! S ^ 'DC AL

ESC021M-15

Contextual Info: ESC021M-15 5 a FAST RECOVERY DIODE ' Features D am per diode for high definition TV and high resolution display. Dam per and modulater diode are jointed in a body. • W )tt\1W fibVkZtifc.7iV*-i\rY9'4'7 Insulated package by fully molding. m m m &m Connection Diagram

ESC021M-15

Abstract: T-fl-30
Contextual Info: ESC021M-15 5a FAST RECOVERY DIODE ' Features D am per diode for high definition TV and high resolution display. Dam per and modulater diode are jointed in a body. • W)tt\1WfibVkZtifc.7iV*-i\rY9'4'7 Insulated package by fully molding. m m m &m • ¿U-JfctDfcabiilEA* *.'

Contextual Info: HYBRID I.C.S "Hi-Net" n ic R ic o n Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general

Contextual Info: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1

M8 3F

Contextual Info: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1

Contextual Info: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1

Contextual Info: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1

UPP1004

Abstract: UPP1001 UPP1002 APP1004
Contextual Info: m m m Wturtown, HA m Micnosemi SURFACE MOUNT PACKAGE PIN DIODE 400 V 2.5 WATT Commercial Two-Way Radio Antenna Switch Diode UPP1001 UPP1002 UPP1004 FEATURES DESCRIPTION . . . . With high isolation, low loss, and low distortion characteristics, this Hicroseii P o w e n i t e PIN diode is perfect for two-way radio antenna switch

tes 1310

Contextual Info: DATA SHEET NEC LASER DIODE MODULE N D L5733P RECTBON DEVICE 1 310nm InGaAsP DC-PBH LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESCRIPTIO N NDL5733P is a 1310 nm laser diode DIP m odule w ith singlemode fib e r and internal therm o-electric cooler. It is designed fo r a

L5070

Abstract: LS061 L7s00 dl7550
Contextual Info: DATA SHEET NEC LASER DIODE MODULE N D L7550P ELECTRON DEVICE 1 5 5 0 nm InGaAsP MQW-DC-PBH-PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESC R IPTIO N N DL7550P is a 1 550 nm pulsed laser diode, that has a newly developed Multi-Quantum Well MQW structure, D IP module

DIN 16901 130

Abstract: SQH5
Contextual Info: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

se3-13

Contextual Info: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.

Contextual Info: PRELIMINARY DATA SHEET NEC ELECTRON DEVICE LASER DIODE MODULE ND L5603P 1 3 1 0 nm O PTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5603P is a 1 3 1 0 nm phase-shifted D F 6 Distributed Feed-Back laser diode Butterfly package module with optical isola­

25B22

Abstract: FS150R12KE3G DIN 16901 130 cn7a
Contextual Info: Technische Information / technical information FS150R12KE3G IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

FS450R12KE3

Contextual Info: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: Technische Information / technical information FF100R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und EmCon4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter

DF600R12IP4D

Abstract: diode 9-f 1N6760
Contextual Info: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode

J3j DIODE ST

Abstract: FZ900R12KE4 dz 300
Contextual Info: Technische Information / technical information FZ900R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , (-./ 0