DIODE 2F WM Search Results

marking 81t

Abstract: DE5LC20U fly wheel SMD MARKING VP smd marking ks smd diode 0.5A fast 3SM* diode
Contextual Info: Super Fast Recovery Diode wnnm o u t l i n e Twin Diode DE5LC20U U nit I mm Package : E-pack Weight 0.326« T yp 200V 5A r^ r*] @ <a> cd Feature • SM D 6.6 • e v -rx • D C /D C 3 y i K - 9 • y 3 ' f i t i — )l> • ¡811. FA (ffl) D ale kk Ih

kss213C adjust

Abstract: SONY KSS-213C KSS213C Laser kss213C
Contextual Info: SC9696P CD SERVO CONTROLLER WITH MCU DESCRIPTIONS SC9696P is a CD play controller with CD player, remote control decoding, clock display mature function , which includes CD digital servo controller, CD signal processor, digital audio DAC output, with interface supporting wma/mps encoding/decoding

SONY KSS-213C

Abstract: kss-213c kss 213c laser kss213C adjust kss 213c CD Laser pickup kss sony kss213C sanyo Laser pickup da11 Laser kss213C SANYO DA11 laser
Contextual Info: SC9696P CD SERVO CONTROLLER WITH MCU DESCRIPTIONS SC9696P is a CD play controller with CD player, remote control decoding, clock display mature function , which includes CD digital servo controller, CD signal processor, digital audio DAC output, with interface supporting wma/mps encoding/decoding

Diode marking 27C

Abstract: Ss 24 DIODE SMD SMD Marking jx diode smd marking jx MARKING CL4 smd marking YF smd diode 27c diode smd marking VD mark g1f
Contextual Info: Schottky Barrier Diode Single Diode m tm m DG1S4 o u tlin e Package :G 1 F Unu:mm Weight O.Ollii Typ 4 0 V 1A 35 <2) Feature •Î8/J\5!JSMD • • Ultra-small SMD • Ultra-thin PKG=0.8mm • Low VF-0.55V 0.8mm • ô V f =0.55V i |L71 C a th o d e m a rk

MMSF5N03HD

Abstract: diode 2f wm
Contextual Info: MOTOROLA SEMICONDUCTOR TH3-INK2AL DATA I Product Preview HDTMOSTM E“FETTM High Energy Power MMSF5N03HD Mdorofa Prefarred Oabdm FET ,>?l~+ , $~ N=ChameU lEnhancemem%4fhxk SiIicon Gate e Ultra Low RDS on , High-Cell Density, HDTMOS . SPICE Parameters for Use in Bridge Circuits

MOSFET ior 144

Contextual Info: International [ 3 Rectifier Provisional Data Sheet No. PD 9.1286 IRFY1 3 0 CM HEXFET POWER MOSFET : : Description N -C H A N N E L Product Summary HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very

Contextual Info: International [ragRectifier PD — IRLI2505 PRELIMINARY H EXFET^ Power M OSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm

diode DH LDB 107

Abstract: IN4001 diode B9-B16 122Z DH48A
Contextual Info: ANALOGDEVICES FAX-ON-DEHAND HOTLINE - Page 55 ANALOG DEVICES 16-Bit500kHz WideTemperature RangeSampling ADC AD1385 FUNCTIONAL FEATURES 16-Bit Resolution 500 kHz Sampling Rate Differential linearity Autocalibration Specified over -55°C to +125°C Range SNR 90 dB @ 100 kHz min

IRF9520N

Abstract: 12-II
Contextual Info: <ft*#:. • * .-'»t i 1 ‘ . ,-v PD -9.1521 International IO R Rectifier IRF9520N PRELIMINARY H E X FE T Pow er M O S FE T • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

Contextual Info: PD -91865A International i R Rectifier IRF7555 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Voss = -20V Ftas(on) = 0.055D

A2248

Contextual Info: 2SK1817-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - F-III SERIES • Features IOutline Drawings • High current • l ow no-resistance • No secondary breakdown • Low driving power • High forward Transconductance

E78996 rectifier module

Abstract: CH-8032 e78996 india j-12000 IRFK6HC50 IRFK6JC50 E27114
Contextual Info: Bulletin E27114 International liôËIRprfifier IRFK6HC50,IRFK6JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

IRG4PC30UD

Contextual Info: International I R Rectifier P D 9.1462A IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TR A N SIST O R WITH ULTRAFAST SO FT R E C O V E R Y DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Scans-00936

Abstract: M116 A114 es 1MBI400F-060 Diod 0185 H125
Contextual Info: 1 M B I4 0 0 F -0 6 0 4 0 0 A «± IGBT IG B T M O D U L E : F e a tu r e s • Low Saturation Voltage • W E E tt ( M O S * - M liS ) • Voltage Drive Variety of Power Capacity Series : A p p lic a t io n s >'< —9 Inverter for M otor Drive • AC, DC11 —# 7 > ~ 7 AC*DC Servo Drive Amplifier

transistor bc 567

Contextual Info: TONE DECODER/PHASE LOCKED LOOP NJM567 The NJM567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power output circuitry. Its primary function is to drive a load whenever a sustained frequency within its detection band is

5A60

Abstract: 2di75
Contextual Info: 2D I75M -050 75 a : Outline Drawings ' < n — POWER TRANSISTOR MODULE : Features • SSihpE High DC Current Gain • High Speed Switching • f f l i i ! : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N CXfM ft$£

AN8823, CMOS Phase-Locked-Loop Application

Abstract: sig tech fm modulation and demodulation AN8823
Contextual Info: CD74HC7046A, Jt? te x a s CD74HCT7046A In s tr u m e n ts Data sheet acquired from Harris Sem iconductor SCHS218 m Wm m a M W m • Phase-Locked Loop with VCO and Lock Detector February1998 Features Description • Center Frequency of 18MHz Typ at Vcc = 5V,

"Signal Line Filter"

Abstract: electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972
Contextual Info: Freescale Semiconductor Application Note AN2764 Rev. 0, 06/2005 Improving the Transient Immunity Performance of Microcontroller-Based Applications by: Ross Carlton, Greg Racino, John Suchyta Freescale Semiconductor, Inc. Introduction Increased competition among appliance manufacturers, as well as market regulatory pressures, are

Contextual Info: v microCMOS MM54HCT149/MM74HCT149 8 Line to 8 Line Priority Encoder General Description This priority encoder is implemented in mtcroCMOS Tech­ nology, 3.0 micron silicon gate N-well CMOS. It has the high noise immunity and low power consumption typical of

2SK902

Abstract: SC-65 T151 2sk mosfet rf power A224 M
Contextual Info: 2SK902 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features ■Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power ■ Applications • UPS • [>C-D C converters • General purpose power amplifier

Contextual Info: MITSUBISHI Neh POWER MOSFET FK20SM-5 HIGH-SPEED SWITCHING USE FK20SM-5 OUTLINE DRAWING Dim ensions in mm 4.5 15.9MAX. 1.5 T O <t>3.2 5.45 0.6 4 Q w r V d s s . 250V q rDS ON (MAX). 0.24Í1

jt-007

Contextual Info: TONE DECODER/PHASE LOCKED LOOP NJM567 The NJM567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and pow er output circuitry. Its prim ary function is to drive a load w henever a sustained frequency within its detection band is

diode F4 3J

Contextual Info: YG805C04 2 oa X 3 7 h + — ' < x) T ¥ * O u tlin e D ra w in g s K S C H O T T K Y B A R R IER DIODE I Features Insulated package by fully molding. • te V F Low V f WE • T A v + 's V T M - C o n n e ctio n D iagram Super high speed switching. • -f u - i —

LA 1385

Contextual Info: ► 16-Bit 500 kHz Wide Temperature Range Sampling ADC A N A LO G D E V IC E S AD1385 FUNCTIONAL BLOCK DIAGRAM PRODUCT FEATURES 16-Bit Resolution 500 kHz Sampling Rate Differential Linearity Autocalibration Specified over -55°C to +125°C Range SNR 90 dB @ 100 kHz min