DIODE 288 Search Results

Contextual Info: SKiiP 432 GH 120 - 2*207 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: SLD327YT High-Optical Power Density 3W Laser Diode Description The SLD327YT is a high optical density laser diode. This product employs the compatible package newly developed, so that the thermal and power control circuits can be designed independently. M-288

k792

Contextual Info: SLD326YT High-Optical Power Density 4W Laser Diode Description The SLD326YT is a high optical density laser diode. This product employs the compatible package newly developed, so that the thermal and power control circuits can be designed independently. M-288

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Product specification Philips Semiconductors BB901 Variable capacitance diode DESCRIPTION The BB901 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended as a tunable coupling diode in VHF all-band tuners. QUICK REFERENCE DATA

smd code marking A8 diode

Abstract: smd diode A8 smd diode code a8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance

Contextual Info: Preliminary Data Sheet NX8349YK LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0118EJ0100 Rev.1.00 Dec 13, 2013 DESCRIPTION The NX8349YK is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode

Contextual Info: Preliminary Data Sheet NX8349TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0002EJ0200 Rev.2.00 Dec 13, 2013 DESCRIPTION <R> The NX8349TS is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode

2 Wavelength Laser Diode

Abstract: SLD326YT SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 2A510
Contextual Info: SLD326YT 4W High Power Laser Diode Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 4.0W

SLD326YT

Abstract: SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 Laser Diode 10 pin
Contextual Info: SLD326YT 4W High Power Laser Diode Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 4.0W

SLD327YT

Abstract: SLD327YT-1 SLD327YT-2 SLD327YT-21 SLD327YT-24 SLD327YT-3 3w 9 pin laser
Contextual Info: SLD327YT 3W High Power Laser Diode Description The SLD327YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 3.0W

808 nm 100 mw

Abstract: SLD327YT SLD327YT-1 SLD327YT-2 SLD327YT-21 SLD327YT-24 SLD327YT-3
Contextual Info: SLD327YT 3W High Power Laser Diode Description The SLD327YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 3.0W

808 nm 100 mw

Abstract: SLD326YT SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3
Contextual Info: SLD326YT 4W High Power Laser Diode Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 4.0W

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

switching transistor msd

Abstract: Mil-R-39016/11 tyco mil relay
Contextual Info: MS MSD MSDD MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MS MSD MSDD MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Contextual Info: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are

Contextual Info: SKiiP 513GD172-3DUL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms

2013GB172

Abstract: skiip gb 120 2013GB172-4DL iec 60721-3-3
Contextual Info: SKiiP 2013GB172-4DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms

ST tvs diode sma

Abstract: BP317 BZG142 BZG142-68 philips zener diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG142 SMA ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification SMA ZenBlockTM; zener with integrated blocking diode