DIODE 288 Search Results
DIODE 288 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 288 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SKiiP 432 GH 120 - 2*207 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A | |
Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A | |
Contextual Info: SLD327YT High-Optical Power Density 3W Laser Diode Description The SLD327YT is a high optical density laser diode. This product employs the compatible package newly developed, so that the thermal and power control circuits can be designed independently. M-288 |
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SLD327YT SLD327YT W/200 M-288 | |
k792Contextual Info: SLD326YT High-Optical Power Density 4W Laser Diode Description The SLD326YT is a high optical density laser diode. This product employs the compatible package newly developed, so that the thermal and power control circuits can be designed independently. M-288 |
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SLD326YT SLD326YT W/400 M-288 k792 | |
RJS6004TDPP-EJContextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A |
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RJS6004TDPP-EJ R07DS0896EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ | |
RJS6004TDPP-EJContextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A |
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RJS6004TDPP-EJ R07DS0896EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ | |
RJS6005TDPP-EJContextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A |
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RJS6005TDPP-EJ R07DS0900EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ | |
Contextual Info: Product specification Philips Semiconductors BB901 Variable capacitance diode DESCRIPTION The BB901 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended as a tunable coupling diode in VHF all-band tuners. QUICK REFERENCE DATA |
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BB901 BB901 | |
smd code marking A8 diode
Abstract: smd diode A8 smd diode code a8
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M3D049 BAP50-03 OD323 MAM406 OD323) 125004/00/02/pp8 smd code marking A8 diode smd diode A8 smd diode code a8 | |
Contextual Info: Preliminary Data Sheet NX8349YK LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0118EJ0100 Rev.1.00 Dec 13, 2013 DESCRIPTION The NX8349YK is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode |
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NX8349YK R08DS0118EJ0100 NX8349YK R08DS0118EJ0100 | |
Contextual Info: Preliminary Data Sheet NX8349TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0002EJ0200 Rev.2.00 Dec 13, 2013 DESCRIPTION <R> The NX8349TS is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode |
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NX8349TS R08DS0002EJ0200 NX8349TS | |
2 Wavelength Laser Diode
Abstract: SLD326YT SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 2A510
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SLD326YT SLD326YT M-288 W/400 2 Wavelength Laser Diode SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 2A510 | |
SLD326YT
Abstract: SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 Laser Diode 10 pin
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SLD326YT SLD326YT M-288 W/400 SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 Laser Diode 10 pin | |
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SLD327YT
Abstract: SLD327YT-1 SLD327YT-2 SLD327YT-21 SLD327YT-24 SLD327YT-3 3w 9 pin laser
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SLD327YT SLD327YT M-288 W/200 SLD327YT-1 SLD327YT-2 SLD327YT-21 SLD327YT-24 SLD327YT-3 3w 9 pin laser | |
808 nm 100 mw
Abstract: SLD327YT SLD327YT-1 SLD327YT-2 SLD327YT-21 SLD327YT-24 SLD327YT-3
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SLD327YT SLD327YT M-288 W/200 808 nm 100 mw SLD327YT-1 SLD327YT-2 SLD327YT-21 SLD327YT-24 SLD327YT-3 | |
808 nm 100 mw
Abstract: SLD326YT SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3
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SLD326YT SLD326YT M-288 W/400 808 nm 100 mw SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 | |
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
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switching transistor msd
Abstract: Mil-R-39016/11 tyco mil relay
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MIL-R-39016/11 MIL-R-39016/16 MIL-R-39016/21 MIL-R-28776/3 switching transistor msd Mil-R-39016/11 tyco mil relay | |
1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
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HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx | |
Contextual Info: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are |
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NX5522 R08DS0029EJ0100 | |
Contextual Info: SKiiP 513GD172-3DUL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms |
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513GD172-3DUL 513GD172-3DUL | |
2013GB172
Abstract: skiip gb 120 2013GB172-4DL iec 60721-3-3
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2013GB172-4DL 2013GB172-4DL 2013GB172 skiip gb 120 iec 60721-3-3 | |
ST tvs diode sma
Abstract: BP317 BZG142 BZG142-68 philips zener diode
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M3D168 BZG142 DO-214AC MGU215 DO-214AC) 613510/01/pp8 ST tvs diode sma BP317 BZG142 BZG142-68 philips zener diode |