DIODE 272 Search Results
DIODE 272 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 272 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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GH170
Abstract: gh17
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gh170igbt11rthjs10gh17 | |
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Contextual Info: Packaged Silicon PIN Diode Outline Drawings of Available Case Styles PIN DIODE SELECTION GUIDE M/A-COM SEMICONDUCTOR PRODUCTS OPERATION • Burlington, MA 01803 • 617 272-3000 • TWX 710-332-6789 • TELEX 94-9464 |
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
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ebf837r059987r05s99en50011+4 | |
diode number
Abstract: H07V-U terminal of diode
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h07v-ulp5/10/90ec001419diode number+1 | |
A 3150 igbt driver
Abstract: IR E78996 IRF E78996 ECONO2-6PACK IGBT module ir igbt 1200V 40A igbt qualification circuit E78996 IR GB25XF120K
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gb25xf120ka 3150 igbt driverir e78996irf e78996+4 | |
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Contextual Info: SMD Zener Diode CZRSC55C2V0-G Thru CZRSC55C36-G Voltage: 2.0 to 36 Volts Power: 0.5 Watts RoHS Device Features 0805 - This diode is also available in other case styles including the 1206 case with the type designation. - Sillcon Planar Power Zener Diode. 0.086 2.20 |
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czrsc55c2v0-gczrsc55c36-gqw-bz023 | |
MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
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ms4-009-13mg1007-42mg1020-m16msc1075m+2 | |
modulator circuit
Abstract: BY438 Philips diode tFR
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bbs3131d0eb471by438od-64+2 | |
GH170
Abstract: SIN DIODE 150A diode
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gh170sin diode150a diode | |
1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
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hsn278wkhzc10hzc11hzc12+16 | |
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Contextual Info: DATA SHEET LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. |
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nx5323eh | |
skiip 23 ac 128 t 48
Abstract: skiip 23 ac 128 t 47 skiip 25 ac 128 t 47 skiip 23 ac 128 t 2 skiip 23 ac 128 t 3
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\marketin\datenbl\skiippac\sensor\d192ghskiip 23 ac 128 t 48skiip 23 ac 128 t 47skiip 25 ac 128 t 47+2 | |
TVS Diode
Abstract: diode array S020L SO 273 tvs diode 225
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s0-16lplc01-6plc03-6ot-143+10 | |
Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
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thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+6 | |
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Contextual Info: Part: SMBJ220CA Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature |
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smbj220ca10x100010x160 | |
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Contextual Info: Part: SMBJ220A Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature |
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smbj220a10x100010x160 | |
WLD3343
Abstract: WTW002 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640
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wld33434-aug-0831-aug-09wld3343-00400-a+6 | |
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Contextual Info: Philips Semiconductors Preliminary specification UHF variable capacitance diode DESCRIPTION BB134 QUICK REFERENCE DATA The BB134 is a silicon, double-implanted variable capacitance diode in planar technology, intended for use in UHF tuners. It has a high linearity and is |
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bb134od323bb135 | |
national semiconductor lm334
Abstract: LM334 MS-026 SML2108 K2053 fig05
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sml210810-bitnational semiconductor lm334lm334+3 | |
IRF E78996
Abstract: IRK E78996 701819-303ac IRK E78996 p432 F112 I27900 TO 220 THYRISTOR FAST SWITCHING
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i27091e7899660hidth10ohms+6 | |
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Contextual Info: LM63 www.ti.com SNAS190E – SEPTEMBER 2002 – REVISED MAY 2013 LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control Check for Samples: LM63 FEATURES DESCRIPTION • The LM63 is a remote diode temperature sensor with |
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snas190e2n3904 | |
Tachometer circuit 2011Contextual Info: LM96063 www.ti.com SNIS149A – NOVEMBER 2011 – REVISED NOVEMBER 2011 LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control Check for Samples: LM96063 FEATURES • 1 • 2 • • • • • • • Accurately senses remote diode-connected |
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lm96063snis149ammbt390410-bit+2 | |
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Contextual Info: LM63 www.ti.com SNAS190E – SEPTEMBER 2002 – REVISED MAY 2013 LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control Check for Samples: LM63 FEATURES DESCRIPTION • The LM63 is a remote diode temperature sensor with |
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snas190e2n3904 | |
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Contextual Info: LM96063 www.ti.com SNIS149A – NOVEMBER 2011 – REVISED NOVEMBER 2011 LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control Check for Samples: LM96063 FEATURES • 1 • 2 • • • • • • • Accurately senses remote diode-connected |
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lm96063snis149ammbt390410-bit+1 | |