DIODE 26 Search Results

1N4148G

Contextual Info: 1N4148G SMALL-SIGNAL DIODE Reverse Voltage 100 Volts Peak Forward Current - 150mA DO-35 FEATURES .022 0.56 .018 (0.46) 1.02 (26.0) MIN. * Silicon Epitaxial Planar Diode * Fast switching diode. .165 (4.2) MAX. * Lead free product .079 (2.0) DIA. MAX. 1.02 (26.0)

DD200GB40

Abstract: DD200GB80
Contextual Info: DIODE MODULE DD200GB UL;E76102 （M） Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating

BAP70-03

Abstract: DIODE SMD A9 diode MARKING A9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators

APT0502

Abstract: APTDF400U120G fast recovery diode 1a 1200v
Contextual Info: APTDF400U120G Single diode Power Module VCES = 1200V IC = 400A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers

smd code marking JfP

Abstract: BAL99
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAL99 High-speed diode Product specification Supersedes data of 1999 May 26 2003 Dec 12 Philips Semiconductors Product specification High-speed diode BAL99 FEATURES PINNING • Small plastic SMD package

SOD323 BAS316

Abstract: DIODE SMD A6 BAS316 SC-76 diode SMD MARKING CODE A6 BAS316,115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAS316 High-speed diode Product specification Supersedes data of 1998 Mar 26 2004 Feb 04 Philips Semiconductors Product specification High-speed diode BAS316 FEATURES PINNING • Very small plastic SMD package

1N4148 krad

Abstract: SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5
Contextual Info: LM136A-2.5QML LM136A-2.5QML 2.5V Reference Diode Literature Number: SNOSAM3D LM136A-2.5QML 2.5V Reference Diode General Description Features The LM136A-2.5QML integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference

Contextual Info: 200V 2x60A APT60D20LCT APT60D20LCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

APT0502

Abstract: APTDF500U40G
Contextual Info: APTDF500U40G Single diode Power Module VCES = 400V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles

APT10078BLL

Abstract: APT15DQ120K APT15DQ120KG diode 3683
Contextual Info: 1200V 15A APT15DQ120K APT15DQ120KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE K PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

ULTRAFAST RECTIFIER 16A 600V vf 1.7

Abstract: diode 8a 400v APT6038BLL APT8DQ60K3 APT8DQ60K3G diode 8A 400 V
Contextual Info: 600V 8A APT8DQ60K3 APT8DQ60K3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE K3 PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

ZENER DIODE marking l2

Abstract: zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B
Contextual Info: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.

DIODE MARKING CODE KAE

Abstract: J-STD-020A MMBD3004BRM MMBD3004BRM-7
Contextual Info: MMBD3004BRM HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY SPICE MODEL: MMBD3004BRM NEW PRODUCT Features • · · · Two Series Diode Circuits Connect to Form Full Wave Bridge Fast Switching Speed High Conductance High Reverse Breakdown Voltage Rating SOT-26

ZLLS400

Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

Marking A2t

Abstract: NTE6129 9300A
Contextual Info: NTE6129 Silicon Power Rectifier Diode 700 Amp, DO200AB Features: D High Power, Fast Recovery Time D High Current Capability D Low Forward Recovery Applications: D Snubber Diode for GTO D High Voltage Free−Wheeling Diode D Fast Recovery Rectifier Applications

Contextual Info: PN41_11 TM POW-R-BLOK Common Anode Dual Diode Module 1100 Amperes / Up to 2600 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification

LMH6525

Abstract: High-Frequency Modulation Laser cd dvd
Contextual Info: LMH6525,LMH6526 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Literature Number: SNOSAF1A LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output General Description Features The LMH 6525/6526 is a laser diode driver for use in

SVC341

Abstract: EN2618B 4550L
Contextual Info: Ordering number :EN2618B SVC341 Diffused Junction Type Sillicon Diode Varactor Diode for Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor irf 645

Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

NX8570SD

Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Contextual Info: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

Contextual Info: ISL9R30120G2 30 A, 1200 V STEALTH Diode Features Description • Stealth Recovery trr = 269 ns @ IF = 30 A The ISL9R30120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse

continuous wave light source for dwdm system

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NX8563 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.