DIODE 255 KE Search Results

25518I

Contextual Info: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 450 A 2x 250 A ITAVM = VRRM = 1200-1800 V 3 Type 7 6 2 MCC 255-12io1 MCC 255-14io1 MCC 255-16io1 MCC 255-18io1 MCD 255-12io1

Contextual Info: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 450 A 2x 250 A ITAVM = VRRM = 1200-1800 V 3 Type 7 6 2 MCC 255-12io1 MCC 255-14io1 MCC 255-16io1 MCC 255-18io1 MCD 255-12io1

thyristor 250A

Abstract: thyristor 450A
Contextual Info: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 450 A 2x 250 A ITAVM = VRRM = 1200-1800 V 3 Type 7 6 2 MCC 255-12io1 MCC 255-14io1 MCC 255-16io1 MCC 255-18io1 MCD 255-12io1

Contextual Info: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;

Contextual Info: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;

ZY180L

Abstract: diode b6 k 450 25518I ixys mcc 255
Contextual Info: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions

diode b6 k 450

Contextual Info: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions

Contextual Info: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions

BY 255 diode

Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Contextual Info: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V

THYRISTOR MODULE MCC 25

Abstract: 2x450 DIODE bridge 255
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 255 ITRMS = 2 x 450 A MCD 255 ITAVM = 2 x 250 A VRRM = 1200 - 1800 V VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM

LT 0216 diode

Abstract: 20/LT 0216 diode diode bridge LT 405
Contextual Info: DIXYS MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ^TRMS ^TAVM V RRM V RSM V RRM VDSM v DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ^TRMS’ ^FRMS T VJ - T VJM Tc = 85°C; 180° sine ^TAVM’ ^FAVM ^TSM’ ^FSM Ji2dt

duraseal

Abstract: SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide
Contextual Info: Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 james.scofield@wpafb.af.mil James Richmond and

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

COUNTER LED bcd

Abstract: CM4600 TQFN-24 LED517 14 pin mobile phone camera pinout LED09 CM4600-11QF
Contextual Info: PRELIMINARY CM4600 Single-Chip Multi-LED Driver for Cell Phones Features Product Description • The CM4600 provides all power and control for LEDs in the display backlights, keypad, auxiliary lights and camera-flash of a cell phone. • • • • • •

Contextual Info: LM95235 LM95235-Q1 www.ti.com SNIS142F – APRIL 2006 – REVISED MARCH 2013 Precision Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology Check for Samples: LM95235, LM95235-Q1 FEATURES KEY SPECIFICATIONS • • • • • •

pin diagram AMD sempron

Abstract: BJT with V-I characteristics AMD sempron block diagram 3300
Contextual Info: LM95235 LM95235-Q1 www.ti.com SNIS142F – APRIL 2006 – REVISED MARCH 2013 Precision Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology Check for Samples: LM95235, LM95235-Q1 FEATURES KEY SPECIFICATIONS • • • • • •

Contextual Info: Analog Power AM4892N Dual N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (mΩ) 255 @ VGS = 10V 290 @ VGS = 4.5V ID(A) 2.3 2.2 Typical Applications:

Contextual Info: Analog Power AM3463P P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

Contextual Info: Analog Power AM7150N N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

Contextual Info: Analog Power AM20N15-250D N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (mΩ) 255 @ VGS = 10V 290 @ VGS = 4.5V ID(A) 12 11 Typical Applications:

Contextual Info: Analog Power AM4392N N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (mΩ) 255 @ VGS = 10V 290 @ VGS = 5.5V ID (A) 2.9 2.7 Typical Applications:

zy180l

Contextual Info: Optional accessories for Thyristor/Diode Modules For module-types MCC 19, 26, 44, 56 ,7 2 , 94 and 95 version 1: Keyed Gate/Cathode twin plugs with wire length = 350 mm; gate = yellow, cathode = red Type ZY 200 L L = Left for pin pair 4/5 Type ZY 200 R (R = Right for pin pair 6/7)

Contextual Info: Analog Power AM7500C P & N-Channel 150-V D-S PRODUCT SUMMARY VDS (V) 150 Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed -150 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details J1MSW-6XP Product Details Military/Aerospace High Performance Relays