DIODE 2458 Search Results

SML10SUZ12SC

Contextual Info: SML10SUZ12SC Ultrafast Recovery Diode 1200 Volt, 2 X 10 Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 10SUZ12SC 1 - Anode 1 2 - Com. Cathode 1 3 - Anode 2 diode features a triple charge control action utilising

diode 2458

Abstract: d3pak "ultraFast Recovery Diode" low forward voltage fast diode ultra low forward voltage diode local lifetime diode smps 30w
Contextual Info: SML10SUZ12SC MECHANICAL DATA Ultrafast Recovery Diode 1200 Volt, 2 X 10 Amp TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with low emitter efficiency and local lifetime control techniques.

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

d749n

Abstract: D1069N D1809N D269N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

V 2238

Abstract: D1069N D1809N 1756 diode d749n LTR-S D269N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

c 3953

Abstract: 6914 D1809N PD 1515 V 2238 D1069N D269N D3301N D749N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

6914

Abstract: 2481 diode 1298 D1069N D1809N D269N D3301N D749N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

BiFET Processes

Contextual Info: Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes Cristian Cismaru and Peter J. Zampardi* Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 cristian.cismaru@skyworksinc.com, 805.480.4663 *formerly of Skyworks Keywords: Tantalum Nitride, Schottky, HBT, BiFET, GaAs, InGaP.

hitachi rectifier U05B

Abstract: U05E Diode U05B U05B U05C U05G U05J 1S2455 diode 2458 V180
Contextual Info: T TYPE •FEATURES UP TO 800V 4.0A RMS DIODE OUTLINE DRAWING • Optimum to serve as power supply rectifier for general apparatus, especially for large-sized color television sets, video tape recorders and stereo equipments. 1.2 • Employing Hitachi's unique glass encapsulation

KPC357N

Abstract: cosmo 357nt
Contextual Info: KPC357NT0W Series 4PIN MINI-FLAT LOW INPUT CURRENT PHOTOCOUPLER cosmo Description Schematic 4 1 The KPC357NT0W is DC-input single channel which contains a light emitting diode optically coupled to a 3 The input-output isolation voltage is rated at 3750 Vrms.

Contextual Info: KPC357NT0T Series 4PIN MINI-FLAT LOW INPUT CURRENT PHOTOCOUPLER cosmo Description Schematic 4 1 The KPC357NT0T is DC-input single channel which contains a light emitting diode optically coupled to a 3 The input-output Isolation voltage is rated at 3750 Vrms.

Si4622DY

Contextual Info: SPICE Device Model Si4622DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFETwith Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Diode L2N

Abstract: 2MI50F-050 ti2k 1x100
Contextual Info: 2MI50F-050 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET MOS-FET MODULE • Features lOutline Drawings • l ow on-resistance • High current • hsulated to elements and metal base • Separated two-elements • hclude fast recovery diode 2-458 ■ Applications

KPC357

Abstract: KPC357NT0B KPC357NT
Contextual Info: KPC357NT Series 4PIN MINI-FLAT PHOTOTRANSISTOR PHOTOCOUPLER cosmo Schematic 4 The KPC357 is DC-input single channel which 1 Description contains a light emitting diode optically coupled to a 3 2 phototransistor. It is packaged in a 4-pin Mini-Flat package. The input-output isolation voltage is rated at

Contextual Info: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V

Contextual Info: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V

Contextual Info: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V

Si4622DY

Contextual Info: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V

si4622

Abstract: SI4622DY
Contextual Info: New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

BYX 13 400 R

Abstract: byx 67-1000 esm 107 byx 200 byx 12 800 byx 21 6aio VRRM 800, IFSM 300 esm diodes RM250
Contextual Info: Fast recovery Silicon rectifier diode s — trr 5 0 0 ns D io de s de redressement rapides au silic iu m Case Type Boîtier Vrr V m — tr r 5 0 0 ns V f / if (V) (A) T (vjï (°C) ( 0 <A) 'F S M (A) max Tease 100 °C tp 10 ms 25 °C max IR /V ImA) rrm ttrr (11

EMC4002

Contextual Info: EMC4002 SMBus Fan Driver with Temperature Monitoring PRODUCT FEATURES Description The EMC4002 is a combination fan controller device, temperature sensor, and thermal monitor. It contains two RPM based Fan Control Algorithms that monitor the fan’s speed and automatically adjust the drive to