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    DIODE 2400A Search Results

    DIODE 2400A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 2400A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    high power free wheeling diode

    Contextual Info: QRS171D001 1700 Volts Fast Recovery Diode Module 1200 Amps Free Wheeling 700 Amps Average Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Description: Powerex Single Fast Recovery Diode Module features fast switching is specially designed for customer


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    qrs171d001-2400a/high power free wheeling diode PDF

    QRS171D001

    Contextual Info: QRS171D001 Preliminary Fast Recovery Diode Module 1200 Amps/1700 Volts Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Description: Powerex Single Fast Recovery Diode Module features fast switching is specially designed for customer applications. The modules are isolated


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    qrs171d001amps/1700-2400a/ PDF

    DFM1200FXS12-A000

    Contextual Info: DFM1200FXS12-A000 Fast Recovery Diode Module DS5645-1.1 June 2007 LN25322 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Dual Diodes Can be paralleled for 2400A Rating •


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    dfm1200fxs12-a000ds5645-1ln25322 PDF

    DFM1200NXM33-F000

    Abstract: 100FITS
    Contextual Info: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating


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    dfm1200nxm33-f000ds5912-1ln25215100fits PDF

    DIODE A118

    Abstract: K0024
    Contextual Info: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    diode a118k0024 PDF

    DIODE A118

    Abstract: 8199E "RECTIFIER DIODE"
    Contextual Info: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    a118/99diode a1188199erectifier diode PDF

    DFM1200NXM33-A000

    Contextual Info: DFM1200NXM33-A000 DFM1200NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5472-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V


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    dfm1200nxm33-a000ds5472-1 PDF

    DFM1200FXM18-A000

    Contextual Info: DFM1200FXM18-A000 DFM1200FXM18-A000 Fast Recovery Diode Module Preliminary Information DS5420-1.5 April 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM typ VF (max) IF (max) IFM 1800V


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    dfm1200fxm18-a000ds5420-1 PDF

    DFM1200EXS12-A000

    Contextual Info: DFM1200EXS12-A000 Fast Recovery Diode Module DS5851-1.1 June 2007 LN25317 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Triple Diodes Can be paralleled for 3600A KEY PARAMETERS


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    dfm1200exs12-a000ds5851-1ln25317 PDF

    DFM1200AXM45-TS001

    Contextual Info: DFM1200AXM45-TS001 Fast Recovery Diode Module DS6146-1 April 2014 LN31501 FEATURES KEY PARAMETERS • VRRM VF IF IFM 10.2kV Isolation Package  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


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    dfm1200axm45-ts001ds6146-1ln31501 PDF

    DFM1200FXM18-A000

    Abstract: DFM1200FXM18-A
    Contextual Info: DFM1200FXM18-A000 Fast Recovery Diode Module Replaces DS5420-2 DS5420-3 May 2014 LN31600 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates


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    dfm1200fxm18-a000ds5420-2ds5420-3ln31600+1dfm1200fxm18-a PDF

    DFM600XXM65-K000

    Abstract: DFM600XXXM65-K000
    Contextual Info: DFM600XXXM65-K000 Fast Recovery Diode Module DS5807-1.1 July 2007 LN25500 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 1200A Rating


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    dfm600xxxm65-k000ds5807-1ln25500dfm600xxe+1dfm600xxm65-k000 PDF

    143a

    Contextual Info: APTC60DAM18CT Boost chopper SiC FWD diode Super Junction MOSFET Power Module NTC2 VBUS VBUS SENSE VDSS = 600V RDSon = 18mW max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction


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    aptc60dam18ct143a PDF

    igbt module

    Abstract: SID400S12 IGBT 300A IGBT 800
    Contextual Info: SID400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode


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    sid400s12125oc400a/usigbt module+2igbt 300aigbt 800 PDF

    Contextual Info: APTC60DAM18CTG Boost chopper SiC FWD diode Super Junction MOSFET Power Module NTC2 VBUS VBUS SENSE VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction


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    aptc60dam18ctg PDF

    SII400S12

    Contextual Info: SII400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode


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    sii400s12125oc400a/us PDF

    DFM1200EXM18-A000

    Contextual Info: DFM1200EXM18-A000 Fast Recovery Diode Module DS5913-1.0 April 2007 LN25255 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate • Triple Diodes Can be paralleled for 3600A


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    dfm1200exm18-a000ds5913-1ln25255 PDF

    ic 565 application

    Abstract: ic 565 igbt module NF 565 ic SDI400S12 IGBT 300A
    Contextual Info: SDI400S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode


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    sdi400s12125oc400a/usic 565 application+4ic 565igbt modulenf 565 icigbt 300a PDF

    APT0406

    Abstract: APT0501 APT0502 APTC60DAM18CTG
    Contextual Info: APTC60DAM18CTG Boost chopper SiC FWD diode Super Junction MOSFET Power Module NTC2 VBUS VBUS SENSE VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction


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    aptc60dam18ctgapt0406apt0501apt0502 PDF

    DFM1200AXM45-TS000

    Contextual Info: DFM1200AXM45-TS000 Fast Recovery Diode Module DS6132-1 October 2013 LN31071 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Triple Diodes Can Be Paralleled For 3600A


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    dfm1200axm45-ts000ds6132-1ln31071 PDF

    IRF 4950

    Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1200S12H4 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • Hochleistungsumrichter • Motorantriebe • Multi-LevelUmrichter


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    dd1200s12h4barcodecode128irf 4950 PDF

    Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD1200S12H4 IHM-Bモジュール IHM-Bmodule 暫定データ/PreliminaryData VCES = 1200V IC nom = 1200A / ICRM = 2400A 一般応用 • ハイパワーコンバータ


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    dd1200s12h4barcodecode128e83335 PDF

    Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ2400R17HP4_B2 IHM-BModulmitsoftschaltendemTrench-IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 2400A / ICRM = 4800A


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    fz2400r17hp4 PDF

    Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ2400R17HP4_B29 IHM-BModulmitsoftschaltendemTrench-IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 2400A / ICRM = 4800A


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    fz2400r17hp4 PDF