DIODE 20A 600V Search Results

Contextual Info: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.

RG 2006 10A 600V

Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

W20NM60

Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Contextual Info: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

w20nm60

Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

Diode 600v 20a

Abstract: 8037 20A jantx diodes
Contextual Info: SML20SIC06C MECHANICAL DATA SILICON CARBIDE SCHOTTKY DIODE 600V 20A Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) VR (max) 600V VF (typ) 1.5V IF (max) 20A 20.07 (0.790) 20.32 (0.800) 30.35 (1.195)

Contextual Info: SML20SIC06C MECHANICAL DATA SILICON CARBIDE SCHOTTKY DIODE 600V 20A Dimensions in mm inches 6.32 (0.249) 6.60 (0.260) 13.59 (0.535) 13.84 (0.545) 1.02 (0.040) 1.27 (0.050) VR (max) 600V VF (typ) 1.5V IF (max) 20A 20.07 (0.790) 20.32 (0.800) 30.35 (1.195)

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C

Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C

PRSS0003ZE-A

Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A

silicon carbide diode

Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A

APT30DS60B

Abstract: APT30DS60S APT6017BLL 400v high speed diode
Contextual Info: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

S20VTA60

Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VTA60 CaseCase : 2F: SVTA Unit : mm 600V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

A1845

Abstract: n3011 ud2006 a18452
Contextual Info: UD2006FR Ordering number : ENA1845A SANYO Semiconductors DATA SHEET UD2006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter

A1846

Contextual Info: UD2006LS-SB Ordering number : ENA1846 SANYO Semiconductors DATA SHEET UD2006LS-SB Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: UD2006LS-SB Ordering number : ENA1846 SANYO Semiconductors DATA SHEET UD2006LS-SB Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: UD2006FR Ordering number : ENA1845A SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode UD2006FR Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter

SC-93 JEDEC

Contextual Info: RD2006RH-SB Ordering number : EN9054 SANYO Semiconductors DATA SHEET RD2006RH-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • VRRM=600V VF=1.75V max. IF=20A trr=21ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

svt power inverter

Abstract: S20VT60 high Forward Voltage Diode
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VT60 CaseCase : 2F: SVT Unit : mm 600V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply