DIODE 20A 300V Search Results

Contextual Info: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.

RG 2006 10A 600V

Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

W20NM60

Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Contextual Info: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

w20nm60

Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

PJ 969 diode

Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Contextual Info: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode

APT30DS60B

Abstract: APT30DS60S APT6017BLL 400v high speed diode
Contextual Info: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 20A (300V / 20A ) Low loss fast recovery diode Outline drawings, mm 0.1 9.0±0.2 7.0±0.2 Major characteristics 4 0.6±0.2 MS906C3 A 2 1.0±0.2 Features 1.0±0.2 Applications (5.8) 3 3.6±0.2 0.4±0.1 1 (10.1) 2.5 1.5 (2.2) (2.1) 2.0 2.0 Low VF Low height : 2.8mm

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Contextual Info: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance

RD2003

Abstract: RD2003JS-SB A1904 ENA1904 RD2003 LS diode cathode marking 7
Contextual Info: RD2003JS-SB Ordering number : ENA1904 SANYO Semiconductors DATA SHEET RD2003JS-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • VF=1.3V max. IF=20A VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

RD2003

Abstract: RD2003 LS
Contextual Info: RD2003JS-SB Ordering number : ENA1904 SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode RD2003JS-SB Ultrahigh-Speed Switching Diode Features • • • VF=1.3V max. IF=20A VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

G20N50c

Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
Contextual Info: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE

BCS028N06NS

Abstract: 028N06NS DC1502
Contextual Info: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a

Contextual Info: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 • V dss . 300V • ros O N (M AX ) . 0.33Q • ID . 20A • Integrated Fast Recovery Diode (M A X .)

Contextual Info: APT20DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 20A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

20DL2CZ47A

Abstract: 20FL2CZ47A 20fl2cz 20DL2C47A 20DL2CZ47A(F)
Contextual Info: 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A,20FL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300V Average Output Rectified Current : IO = 20A

20FL2CZ

Abstract: 20DL2CZ51A 20FL2CZ51A
Contextual Info: 20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ51A,20FL2CZ51A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300V Average Output Rectified Current : IO = 20A

s20lc30

Abstract: s20lc30 diode DIODE marking ED marking ed diode marking sb diode diode marking 2D
Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE Package I MTO-3P S20LC30 Unit : mm Weight 6.1g Typ> 300V 20A 4 Feature I • 6 jcfiVJ'il' • Low Noise • tnr=30ns • Small 0 jc • ^ 5 1 . OA • iS<S • Switching Regulator • Home Appliance, Office Automation

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF20LC30SM 300V 20A Feature • s v -rx • Low Noise • trr=25ns • tnr=25ns • * g ïü 8 Œ 2kV SII • Full Molded • Dielectric Strength 2kV • S (S • Switching Regulator • Home Appliance, Office Automation

Contextual Info: 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A,20FL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200, 300V l Average Output Rectified Current : IO = 20A

Contextual Info: 20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ51A,20FL2CZ51A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200, 300V l Average Output Rectified Current : IO = 20A

CC2403020N

Abstract: CC2403500N CC2406020N CC2406500N CN2403500N CN2406500N
Contextual Info: Powerex Superfast Recovery Dual Diode Modules 7/3/2003 50A 20A Ic A *click on the products for additional information 300V 600V CC2403020N CC2406020N Voltage Circuit Config CC2403500N CN2403500N CC2406500N CN2406500N Super Fast Common Anode Super Fast Common Cathode

D 16027 G

Contextual Info: CSD20030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=20A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery