DIODE 20A 300V Search Results

w20nm60

Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

20DL2CZ47A

Abstract: 20FL2CZ47A 20fl2cz 20DL2C47A 20DL2CZ47A(F)
Contextual Info: 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A,20FL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300V Average Output Rectified Current : IO = 20A

20FL2CZ

Abstract: 20DL2CZ51A 20FL2CZ51A
Contextual Info: 20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ51A,20FL2CZ51A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300V Average Output Rectified Current : IO = 20A

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF20LC30SM 300V 20A Feature • s v -rx • Low Noise • trr=25ns • tnr=25ns • * g ïü 8 Œ 2kV SII • Full Molded • Dielectric Strength 2kV • S (S • Switching Regulator • Home Appliance, Office Automation

pj 71 diode

Abstract: diode pj 70 zc marking diode 2KV DIODE
Contextual Info: Super Fast Recovery Diode Twin Diode Wtm SF20LC30 OUTLINE 300V 20A Feature • m s 'ix • Low Noise trr=30ns • 71 [Æ -J U K • « 1 I Î E 2kV SEE • trr=30ns • • Full Molded • Dielectric Strength 2kV Main Use • T . 'i • ~ 7 0 =T ' < 7 7

Contextual Info: Super Fast Recovery Diode Twin Diode M im OUTLINE SF20LC30 300V 20A Feature •g y -rx • Low Noise • trr=30ns • trr=30ns • y II Æ - J U K • Full Molded • Dielectric Strength 2kV •S ë fc W Œ 2kVfSÜE Main Use • Switching Regulator • PFC Power Factor Correction

Contextual Info: Super Fast Recovery Diode Twin Diode l ^ DF20LC30 t l l O U T L IN E U nit‘mm Package : STO -220 Weight lJ>g Typ 102 300V 20A Feature • SMD • SM D • e y 'f x • Low Noise • trr=30ns • trr-3 0 n s 4.7 Main Use • T . 'f • Switching Regulator

300V-20A

Contextual Info: Super Fast Recovery Diode Twin Diode m tm DF20LC30 OUTLINE U nit-m m Package : STO-220 W eight 1.5g Typ 10.2 P y h fL ig -(ffl) 300V 20A Feature • SMD • SMD •e y -rx • Low Noise • trr=30ns • trr=30ns 4.7 Main Use • Switching Regulator >DC/DC n y t K —S

S20LC30

Contextual Info: Super Fast Recovery Diode Twin Diode M im S20LC30 O U T L IN E Unit ! mm Package : M TO -3P W eight 6.1g T yp 300V 20A : Feature •g y -rx • trr=30ns • 9 jc ö V J \£ U • Low Noise • trr=30ns • Small 8 jc • ® fl • Switching Regulator • Home Appliance, Office Automation

thyristor inverter

Abstract: dc to ac inverter by thyristor thyristor inverter circuits Gate Turn-off Thyristor 600V 20A 300V switching thyristor 600v 20a IGBT INVERTER 1A 12V thyristor 12V it 1A thyristor inverter schematics
Contextual Info: 7MBR20SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 20A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive

SIDC09D60E

Contextual Info: Preliminary SIDC09D60E Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC09D60E 600V ICn 20A A This chip is used for:

APT0502

Contextual Info: APTDC20H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 20A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR1 CR3 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 •

Contextual Info: APTDC20H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 20A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR3 CR1 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 •

Contextual Info: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive

Contextual Info: FFPF20UP30S Ultrafast Recovery Power Rectifier Features • Ultrafast Switching Speed : rrt < 35ns @IF=20A • High Reverse Voltage : VRRM = 300V • Avalanche Energy Rated • Planar Construction Applications • General purpose • Switching Mode Power Supply

F20UP30S

Abstract: FFPF20UP30S FFPF20UP30STU
Contextual Info: FFPF20UP30S Ultrafast Recovery Power Rectifier Features • Ultrafast Switching Speed : trr < 35ns @IF=20A • High Reverse Voltage : VRRM = 300V • Avalanche Energy Rated • Planar Construction Applications • General purpose • Switching Mode Power Supply

Contextual Info: Preliminary FFPF20UP30S Ultrafast Recovery Power Rectifier FFPF20UP30S Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF=20A • High Reverse Voltage : VRRM = 300V • Avalanche Energy Rated • Planar Construction

mosfet 20a 300v

Abstract: AM3921P 2SK2473-01
Contextual Info: 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Ω 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Q 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Ω 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

FGA90N30D

Contextual Info: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.

2SK2473-01

Abstract: diode 300v 20a
Contextual Info: F U JI 2SK 2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0 ,2 Q 20A 125W > Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof 4.5 r > Applications

diode 300v 20a

Abstract: diode 20a 300v
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

FMC6G20US60

Abstract: FMC7G20US60
Contextual Info: IGBT FMC6G20US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power