DIODE 20A Search Results
DIODE 20A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 20A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DIODE A16
Abstract: 97a6 transistor A16 a15 diode
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o-220fa/to-218/to-p3bt131o-220bta10/btb10+6 | |
97a6
Abstract: transistor A16
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o-p3/to-218/to-3po-218/to-3pbta06o-220+4 | |
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Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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rjs6004wdpkr07ds0897ej0200prss0004ze-a | |
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Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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rjs6004wdpkr07ds0897ej0100prss0004ze-a | |
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Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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rjs6004wdpkr07ds0897ej0300prss0004ze-a | |
PRSS0003ZE-AContextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A |
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rjs6004wdpq-e0r07ds0898ej0101prss0003ze-ao-247 | |
silicon carbide diodeContextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A |
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rjs6004wdpq-e0r07ds0898ej0100prss0003ze-ao-247+1 | |
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Contextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for |
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ffpf60b150dso-220fffpf60b150dstu | |
FFPF60B150DSContextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for |
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ffpf60b150dso-220f | |
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Contextual Info: FFAF60A150DS FFAF60A150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-3PF Applications 1 2 3 Modulation Damper • Modulation + Damper diode designed for |
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ffaf60a150ds | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U20UC30 Preliminary DIODE 20A DIODE DESCRIPTION The UTC U20UC30 is a 20A diode, it uses UTC’s advanced technology to provide the customers with low forward voltage drop and fast switching capability. FEATURES * Low forward voltage drop |
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u20uc30u20uc30l-ta3-tu20uc30g-ta3-tu20uc30l-tf3-t+4 | |
BCS028N06NS
Abstract: 028N06NS DC1502
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dc1502altc4359hdcb2v/20altc4359+4 | |
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Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP3304N Series SP3304N Series 3.3V 20A Diode Array RoHS Pb GREEN Description The SP3304N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and |
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sp3304niec61000-4-5iec61000-4-2iec61000-4-4+1 | |
3304NContextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP3304N Series SP3304N Series 3.3V 20A Diode Array RoHS Pb GREEN Description The SP3304N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and |
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sp3304niec61000-4-5iec61000-4-2iec61000+2 | |
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Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP3304N Series SP3304N Series 3.3V 20A Diode Array RoHS Pb GREEN Description The SP3304N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and |
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sp3304niec61000-4-5iec61000-4-2iec61000-4-4+1 | |
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Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP2504N Series SP2504N Series 2.5V 20A Diode Array RoHS Pb GREEN Description The SP2504N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and |
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sp2504niec61000-4-5iec61000-4-2iec61000-4-4+2 | |
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Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP4065 SP4065 Series 3.3V 20A Diode Array RoHS Pb GREEN Description The SP4065 integrates low capacitance diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can |
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sp4065iec61000-4-5iec61000-4-2msop-10 | |
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Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP2504N Series SP2504N Series 2.5V 20A Diode Array RoHS Pb GREEN Description The SP2504N integrates 4 channels of low capacitance diodes with an additional zener diode to protect sensitive I/O pins against lightning induced surge events and |
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sp2504niec61000-4-5iec61000-4-2iec61000-4-4+2 | |
pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
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pn junction diode structurepower diode" smd 3alm317 spicemosfet half bridge power supply ac to dc5v 50+6 | |
IS-B50
Abstract: 040-BE
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sp40615/50ns8/20s11ipoft+5 | |
SP4062-04UTG
Abstract: 20A marking zener diode marking uh4 DFN-10 uh4
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sp40625/50ns8/20s11ipoft+7 | |
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Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP4060 Series SP4060 Series 2.5V 20A Diode Array RoHS Pb GREEN Description The SP4060 integrates low capacitance diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can safely |
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sp4060iec61000-4-5iec61000-4-2iec61000-4-4+3 | |
SP3304N
Abstract: UDFN10 SP3304NUTG SP330
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sp3304niec61000-4-2iec61000-4-45/50ns+6 | |
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Contextual Info: DIODE ISOLATED MOLD TYPE (F.R.D.) DG20AA-M DG20AA-M is a medium power isolated mould diode suitable for wide range of industrial and home electronics use. DG20AA-M is highly reliable by glass passivation. • High Speed Diode • If(av) = 20A • Tab terminals for easy wiring. |
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dg20aa-m20aa40m20aa60mb-175+1 | |