DIODE 2076 Search Results

Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.

omni+spectra+20760

Abstract: BAT54C/BTA43
Contextual Info: Bulletin PD-20760 04/06 BAT54C SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Bulletin PD-20763 04/06 BAT54A SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

BAT54C

Abstract: PD-20760
Contextual Info: Bulletin PD-20760 04/06 BAT54C SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Bulletin PD-20763 04/06 BAT54A SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

BAT54S

Abstract: BAT54S dc
Contextual Info: Final PD-20762 04/06 BAT54S SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Bulletin PD-20761 04/06 BAT54 SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Bulletin PD-20760 04/06 BAT54C SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Bulletin PD-20761 04/06 BAT54 SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Bulletin PD-20763 04/06 BAT54A SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Final PD-20762 04/06 BAT54S SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

ir54c

Abstract: BAT54C
Contextual Info: Preliminary Data Sheet PD-20760 12/01 BAT54C SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching

IR54S

Abstract: BAT54S
Contextual Info: Preliminary Data Sheet PD-20762 12/01 BAT54S SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching

diode 2076

Abstract: IR54S
Contextual Info: Preliminary Data Sheet PD-20762 12/01 BAT54S SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching

BAT54A

Contextual Info: Preliminary Data Sheet PD-20763 12/01 BAT54A SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching

VSMF9700

Abstract: "rain sensor" VSMF9700-GS08 VSMF9700-GS18 VSMF9700X01
Contextual Info: VSMF9700X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES 94 8553 DESCRIPTION VSMF9700X01 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 package. VSMF9700X01 is dedicated to emitter operation and

Alpha Products

Abstract: ao4703 10A Schottky mosfet with schottky body diode
Contextual Info: AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4703 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC

AO4705

Abstract: AO4705L
Contextual Info: AO4705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4705 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC

vsmy3850gs08

Abstract: vsmy3850 VSMY3850-GS08
Contextual Info: VSMY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high

Contextual Info: VSMY3850X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity,

TFR 463

Abstract: apt50m50 APT2*101D40J
Contextual Info: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X100D40J APT2X101D40J 27 2 T- 4 APT2X100D40J APT2X101D40J 400V 100A 400V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode

MA47221

Abstract: ma47222 MA47200 MA47220
Contextual Info: yflftçQH _ MA47200 Series Stripline PIN Diode Switch Modules Features • BROADBAND 50 OHM DESIGNS THROUGH X BAND ■ CIRCUIT CHARACTERIZED ■ HIGH POWER CAPABILITY ■ VOLTAGE RATINGS TO 1000 VOLTS

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

s1wb

Abstract: diode 2076 60Tstg 604-3 S1WBA60B S1WB 60 25 S1WB(A)60B 6043 s1wba20 50/SEMIKRON s1wb
Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package S1WB A □/60B •外観図 OUTLINE Unit : mm Weight : 0.46g （typ.） Package：1W 10.5 ④ 800V 1A ① 品名略号 Type No. ①＋ ③~ ②∼ S1WB 2076 特長 • 小型 DIP パッケージ