DIODE 200 A Search Results

Contextual Info: DSA 300 I 200 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 300 A 0.88 V Part number DSA 300 I 200 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package:

DIODE MARKING 534

Abstract: DSA 010
Contextual Info: DSA 15 IM 200 UC tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:

BYV32E

Abstract: BYV32E-200 BYV32EB
Contextual Info: BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

BYV32E

Abstract: BYV32EB BYV32EB-200 BYV32EB200
Contextual Info: BYV32EB-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT404 D2PAK surface-mountable plastic package. 1.2 Features and benefits

Contextual Info: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine

XA4202

Contextual Info: VRM = 200 V, IF AV = 20 A, trr = 25 ns(max.) Fast Recovery and High Power Diode CTXA-4202S Features Package The CTXA-4202S is a fast recovery diode which realize a peak reverse voltage of 200 V, a typical forward voltage drop of 0.90 V and typical trr of 18 ns

Contextual Info: DSEC 29-02AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 200 V trr = 25 ns VRSM VRRM TO-263 V V 200 200 Type A DSEC 29-02AS Symbol Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 IFSM A = Anode, C = Cathode, TAB = Cathode

1Z51

Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s

Contextual Info: MMSD3070 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 33 Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM

Contextual Info: DSEC 30-02A HiPerFREDTM Epitaxial Diode IFAV = 2x 15 A VRRM = 200 V trr = 25 ns with common cathode and soft recovery Preliminary Data VRSM VRRM V V 200 200 TO-247 AD Type DSEC 30-02A A C A C A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions

ixys vub 70 -16no1

Abstract: sensor marking code 145A VUB145-16NOXT
Contextual Info: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A

VVZB135-16IOXT

Abstract: VVZB135-16
Contextual Info: VVZB 135-16IOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 135 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A

DHG20I1200PA

Abstract: DHG20I1200HA
Contextual Info: DHG 20 I 1200 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 20 A 200 ns Part number DHG 20 I 1200 PA 3 1 Backside: cathode Features / Advantages: Applications:

Contextual Info: S EM ICOND UCTOR 200 mW Surface Mount LL-34 Hermetically Sealed Glass Fast Switching Schottky Barrier Diode SURFACE MOUNT LL34 Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Units 200 mW -65 to +125

application notes ad9660

Abstract: PULSED LASER DIODE DRIVER c2040 AD9660 Laser diode driver for optical disk power DIODE datasheet or offset current PDF PIN PHOTO DIODE DESCRIPTION AD9660KR AD9660KR-REEL
Contextual Info: a FEATURES 1.5 ns Rise/2.0 ns Fall Times Output Current: 180 mA @ 3 V, 200 mA @ 2.5 V Bias Current: 90 mA @ 3 V Modulation Current: 60 mA @ 3 V Offset Current: 30 mA @ 3 V Single +5 V Power Supply Switching Rate: 200 MHz Onboard Light Power Control Loops 200 MHz Laser Diode Driver

VUB120-16NO2

Abstract: marking ntc 80
Contextual Info: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V

BAV70LT1

Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
Contextual Info: BAV70LT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit

AA911

Contextual Info: MEK 350-02 DA Fast Recovery Epitaxial Diode FRED Module 1 VRSM VRRM V V 200 200 2 VRRM = 200 V IFAVM = 356 A trr = 150 ns 3 2 Type 3 1 MEK 350-02DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

10DDA20

Abstract: TL132
Contextual Info: 1A Avg. 200 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 200 平 均 整 流 電 流 Average Rectified Output Current

Contextual Info: FFB10UP20S 10 A, 200 V, Ultrafast Diode Features Description • Ultrafast with Soft Recovery : < 45 ns The FFB10UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a

Contextual Info: STPR120A _ HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS 1A I f a v V rrm trr (max) 200 V 35 ns FEATURES AND BENEFITS • ■ ■ ■ VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE FAST RECTIFIER EPITAXIAL DIODE

SMBYW01-200

Contextual Info: SMBYW01-200 HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 200 V VF(max) 0.71 V Tj (max) 150 °C FEATURES AND BENEFITS VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP BIPOLAR DEVICE LOW PEAK FORWARD VOLTAGE FOR TELECOM TRANSIENT OPERATION SUCH AS IN

Contextual Info: TO -2 20A C BYW29E-200 Ultrafast power diode Rev. 5 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 1.2 Features and benefits  Fast switching  Low thermal resistance

Contextual Info: RURG80100 November 2013 Data Sheet 80 A, 1000 V, Ultrafast Diode Features • Ultrafast Recovery trr = 200 ns @ IF = 80 A • Max Forward Voltage, VF = 1.9 V (@ TC = 25°C) Description • 1000 V Reverse Voltage and High Reliability The RURG80100 is an ultrafast diode with low forward