DIODE 200 A Search Results
DIODE 200 A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 200 A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: DSA 300 I 200 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 300 A 0.88 V Part number DSA 300 I 200 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package: |
Original |
ot-227bdsa300i200nadsa300i45nadsa300i100na+1 | |
DIODE MARKING 534
Abstract: DSA 010
|
Original |
o-25230typ60747anddiode marking 534+1 | |
IXYS DSA 12Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages: |
Original |
o-25260747and20110721aixys dsa 12 | |
|
Contextual Info: QR_1420T30 200 Amp/1400 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/1400 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. |
Original |
1420t30amp/1400-400a/ | |
|
Contextual Info: QRS1220T30 200 Amp/1200 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/1200 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. |
Original |
qrs1220t30amp/1200-400a/ | |
|
Contextual Info: QR_1220T30 200 Amp/1200 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/1200 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. |
Original |
1220t30amp/1200-400a/ | |
|
Contextual Info: QR_0620T30 200 Amp/600 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/600 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. |
Original |
0620t30amp/600-400a/ | |
|
Contextual Info: QRS1420T30 200 Amp/1400 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/1400 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. |
Original |
qrs1420t30amp/1400-400a/ | |
|
Contextual Info: QRS0620T30 200 Amp/600 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Diode Module 200 Amp/600 Volts Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. |
Original |
qrs0620t30amp/600-400a/ | |
|
Contextual Info: 1N4756A asi SILICON ZENER DIODE DESCRIPTION: The 1N4756A is a Silicon Regulator Diode for General Purpose Voltage Control Applications. MAXIMUM RATINGS 200 mA If 47 Vz 1 .0 P diss V W @ TA = 50 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C CHARACTERISTICS |
OCR Scan |
1n4756a75ontrol | |
|
Contextual Info: BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small |
Original |
bav99ot-23bav70baw56 | |
Module, Diode 200A, 600V Single,
Abstract: CS241020 D-18
|
Original |
cs241020amperes/1000-400a/smodule, diode 200a, 600v single+1 | |
DPG15I200
Abstract: DPG15I200PA
|
Original |
60747and20100125adpg15i200dpg15i200pa | |
DPG15I200
Abstract: dpg15i200pa DPG 15 I 200 PA
|
Original |
60747and20100125adpg15i200dpg15i200pa+1 | |
|
|
|||
diode chopper
Abstract: BSM300GA120DN2 C67070-A2301-A70
|
Original |
bsm300ga120dn2200galc67070-a2301-a70diode chopper | |
200GAR
Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
|
Original |
bsm300ga120dn2200garc67070-a2301-a70bsm200gar120dn2 | |
121-02A
Abstract: E72873 ixys dsei 12
|
Original |
ot-227e7287321-02a121-02a+1 | |
|
Contextual Info: DSEI 2x 121 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 IFAVM = 2x 123 A VRRM = 200 V = 35 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 121-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 |
Original |
ot-227e7287321-02a | |
IXYS DSEI 2X121
Abstract: 121-02P 12102p 2x123
|
Original |
2x121ik-10vx-182x123+3 | |
D1471
Abstract: M7 zener A3K1
|
Original |
d1471m7 zenera3k1 | |
zener diode 1N4756a
Abstract: 1N4756A
|
OCR Scan |
1n4756azener diode 1n4756a | |
BYV32E
Abstract: BYV32E-200 BYV32EB
|
Original |
byv32e-200o-220abbyv32ebyv32eb | |
BYV32E
Abstract: BYV32EB BYV32EB-200 BYV32EB200
|
Original |
byv32eb-200ot404byv32ebyv32eb+1 | |
|
Contextual Info: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine |
OCR Scan |
2x1612x158ot-2272x161-02a | |