DIODE 1JU Search Results

diode 1,5k

Abstract: diode 1fp
Contextual Info: _ PRELIMINARY DATA SHEET_ NEC / / LASER DIODE NDL7514P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode

Pulsed Laser 1550nm

Contextual Info: , N E C / / _PRELIMINARY DATA SHEET_ LASER DIODE NDL7553P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode

DIODE 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters

diode 1n4148

Abstract: 1N4148 75v 150mA diode DIODE 1N4148 characteristics thermal diode 1n4148
Contextual Info: 1N4148 SMALL SIGNAL DIODE VOLTAGE: 100V CURRENT: 150mA FEATURE DO-35 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-35 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.13g Dimensions in inches and millimeters

PW10A

Contextual Info: NEC / ' PRELIMINARY DATA SHEET_ LASER DIODE NDL7513P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7513P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diodes

KDV154E

Contextual Info: KDV154E SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC Reverse Voltage Vr 20 V Junction Temperature Tj 150 °c

Contextual Info: HL6726MG Visible High Power Laser Diode HITACHI Description The HL6726MG is a 0.68pm band AlGalnP laser diode LD with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types

Zener Diode 3A

Contextual Info: RD2.0ES~RD39ES Zener diode Features 1. DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch（5mm） 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc.

Contextual Info: LL101A/LL101B/LL101C Schottky Barrier Diode Features 1. Small surface mounting type. 2. High reliability. 3. Low reverse current and low forward voltage. 4. This diode is also available in the DO-35 case with type designation SD101A, B, C. Applications HF-Detector, protection circuit, small battery charger,

Contextual Info: HL1326GN 1.3 jim InGaAsP Laser Diode HITACHI ADE-208-464 Z 1st. Edition November 1996 Description The HL1326GN is a 1.3 (Am InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptic communication

ESJA59-10

Abstract: ESJA59-14
Contextual Info: ESJA59 iokv, 1 k 2 V , 1 4 k V K Outline Drawings a s s a c » ' - f ^ - - K _ HIGH VOLTAGE SILICON DIODE ESJA59tt, ESJA59 is high reliability resin m olded type high voltage diode in small size package w h ich is sealed a m ultilayed mesa type silicon chip by epoxy resin.

Contextual Info: 1JUS.762B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage762m @I(Z) (A) (Test Condition)100m Tolerance (%)5 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.50Â Temp Coef pp/10k Maximum Operating Temp (øC)150’

Contextual Info: 1JUS.730A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage730m @I(Z) (A) (Test Condition)50m Tolerance (%)10 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.1.0Â Temp Coef pp/10k Maximum Operating Temp (øC)150’

Contextual Info: 1JUS.616B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage616m @I(Z) (A) (Test Condition)5.0m Tolerance (%)5 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.10Â Temp Coef pp/10k Maximum Operating Temp (øC)150’

Contextual Info: 1JUS.762A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage762m @I(Z) (A) (Test Condition)100m Tolerance (%)10 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.50Â Temp Coef pp/10k Maximum Operating Temp (øC)150’

Contextual Info: 1JUS.616A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage616m @I(Z) (A) (Test Condition)5.0m Tolerance (%)10 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.10Â Temp Coef pp/10k Maximum Operating Temp (øC)150’

Contextual Info: 2FI100G 2 xiooa " i i : Outline Drawings Y * i * n . —)V _ FAST RECOVERY DIODE MODULE 91*“ . «O'" 61R 176 b 0 G Ml - • . 11 ■ 4 # ^ : F eatures L' • t tt ta f lW ft* • 1-ft 1JU_ <Ì S hort Reverse Recovery Time Variety of Connection Menu

MA47221

Abstract: ma47222 MA47200 MA47220
Contextual Info: yflftçQH _ MA47200 Series Stripline PIN Diode Switch Modules Features • BROADBAND 50 OHM DESIGNS THROUGH X BAND ■ CIRCUIT CHARACTERIZED ■ HIGH POWER CAPABILITY ■ VOLTAGE RATINGS TO 1000 VOLTS

Contextual Info: Z Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: LLZ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: 1SS244 High-voltage switching diode Features 1. Small surface mounting type 2. High reliability 3. VRM=250V Applications High voltage switch and general purpose rectification Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

Contextual Info: BAT42/BAT43 Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

Contextual Info: SD103A/SD103B/SD103C Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃