DIODE 1JU Search Results

Contextual Info: HL1326GN 1.3 jim InGaAsP Laser Diode HITACHI ADE-208-464 Z 1st. Edition November 1996 Description The HL1326GN is a 1.3 (Am InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptic communication

Contextual Info: 2FI100G 2 xiooa " i i : Outline Drawings Y * i * n . —)V _ FAST RECOVERY DIODE MODULE 91*“ . «O'" 61R 176 b 0 G Ml - • . 11 ■ 4 # ^ : F eatures L' • t tt ta f lW ft* • 1-ft 1JU_ <Ì S hort Reverse Recovery Time Variety of Connection Menu

MA47221

Abstract: ma47222 MA47200 MA47220
Contextual Info: yflftçQH _ MA47200 Series Stripline PIN Diode Switch Modules Features • BROADBAND 50 OHM DESIGNS THROUGH X BAND ■ CIRCUIT CHARACTERIZED ■ HIGH POWER CAPABILITY ■ VOLTAGE RATINGS TO 1000 VOLTS

Contextual Info: Z Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: LLZ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: BAT42/BAT43 Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

Contextual Info: LL42/LL43 Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage 3. Small surface mounting type Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings

Contextual Info: 1N4728A~1N4764A Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Low reverse current level 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: 1N5221C~1N5267C Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Low reverse current level 4. VZ-tolerance±2% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: SMA5913B~SMA5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

marking 81J

Contextual Info: MMBZ5221B~MMBZ5267B Zener diode Features 1. High reliability 2. Wide voltage range available 3. Low reverse current level 4. Small outline package for space savings 5. Surface mount package Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃

1N5988B

Abstract: 1N6006B 1N5994B 1N5995B 1N5993B
Contextual Info: 1N5985B~1N6016B Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 2.4V to 47V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: LL55C Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current

M9608

Abstract: microwave transmitter circuit diagram 1270-016 Microwave PIN diode UM9601, PIN Diode UM9808 10KW 25KW UM9401 UM9601
Contextual Info: UM9601-UM9608 PIN DIODE For Microstrip 900MHz Antenna Switches and Microwave Applications Features • Low Inductance Shunt Mount Package • Characterized for Microstrip • Microsemi Ruggedness and Reliability • High Power Handling Capability • Low Bias Current Requirement

Contextual Info: BZX85C Series Zener diode Features 1. High reliability 2. Low reverse current 3. Very sharp reverse characteristic Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type I=4mm TL≤25℃ Power dissipation Junction temperature

AN1471

Abstract: STTH2R06 STTH2R06A STTH2R06RL STTH2R06S STTH2R06U Diode SMB marking code 14
Contextual Info: STTH2R06 High efficiency ultrafast diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K Description The STTH2R06 is using ST Turbo 2 600 V planar Pt doping technology. It is specially suited for

Contextual Info: HSC119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-615 Z Rev 0 April 1, 1998 Features • Low capacitance. (C=2.0pF max) • Short reverse recovery time. (t„ =3.0ns max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

Contextual Info: Temic CNY65Exi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description T he C N Y 65Exi consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 4-lead plastic package. T he single com ponents are m ounted in opposite

Contextual Info: [•13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE D I M E N S I O N S ^ D E S C R IP T IO N The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G PLANE FEA TU R ES _ ST13 32 SYMBOL • Good optical to mechanical alignment

CNY21EX

Contextual Info: Tem ic CNYHExi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description T he CN Y 21Exi consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 4-lead plastic dual inline package. T he single com ponents are m ounted on one leadfram e in

td62004f

Abstract: TD62003 TD62003F
Contextual Info: T D 6 2 0 0 1 F, T D 6 2 0 0 2 F BIPOLAR DIGITAL INTEGRATED C IRCU IT s i l i c o n m o n o lit h ic TD6200IF TD62002F TD62003F TD62004F DARLINGTON DARLINGTON DARLINGTON DARLINGTON T n C O n n O C T n C O f lA ilF IU D Z U U u r , IUu£ U U 4 r DRIVER DRIVER

Contextual Info: LTC1147-3.3 LTC1147-5/LTC1147L u im TECH N O LO G Y High Efficiency Step-Down Switching Regulator Controllers F€flTUR€S DCSCMPTIOn • Very High Efficiency: Over 95% Possible ■ Wide V|N Range: 3.5V* to 16V * Current Mode Operation for Excellent Line and Load

wd800

Abstract: B36-A
Contextual Info: PD - 9.543C International I«R Rectifier IRFPG50 HEXFET Power MOSFET • D y n a m ic d v /d t R a tin g • Repetitive Avalanche Rated • V DSS = Is o la te d C e n tra l M o u n tin g H o le • Fast Switching • Ease of Paralleling • Simple Drive Requirements

LM2575HVT-12

Abstract: LM2575T15 RL-1961 RL1961 1575HV LM2575HVT-ADJ LM2575N-ADJ LM2575T-12 LM2575T-15 LM2575T-ADJ
Contextual Info: LM1575/LM2575/LM2575HV Series SIMPLE SWITCHER 1A Step-Down Voltage Regulator General Description Features The LM2575 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 1A load with