DIODE 19 B Search Results

ST tvs diode sma

Abstract: BP317 BZG142 BZG142-68 philips zener diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG142 SMA ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification SMA ZenBlockTM; zener with integrated blocking diode

BAT74

Abstract: SOT143B smd diode marking code L41 marking L41
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAT74 Schottky barrier double diode Product data sheet Supersedes data of 1996 Mar 19 2001 Sep 05 NXP Semiconductors Product data sheet Schottky barrier double diode BAT74 FEATURES PINNING • Low forward voltage PIN

SMD MARKING CODE 5kp

Abstract: BAP64-05
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAP64-05 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 19 NXP Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled

BAP64-05

Abstract: DIODE marking S4 06
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAP64-05 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 19 NXP Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled

laser driver TTL circuits

Abstract: 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07
Contextual Info: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel _Features ♦ Rise Times Less than 250ps ♦ Differential PECL Inputs

BYC8-600

Abstract: hitag application note Nxp byc8
Contextual Info: BYC8-600 Hyperfast power diode Rev. 7 — 19 July 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD59 2-lead TO-220AC plastic package. 1.2 Features and benefits „ Low reverse recovery current and low thermal resistance

BAT74

Abstract: BAT74L41
Contextual Info: BAT74 Schottky barrier double diode Rev. 03 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B

high voltage circuit breaker

Abstract: 6v to 7.5v dc power supply circuit bp 103-5 DIODE BP ORing diode JESD51-7 MAX5080 XMAX5963 max5963 si7222
Contextual Info: 19-4344; Rev 0; 10/08 KIT ATION EVALU E L B AVAILA Dual, 7.5V to 76V, Hot-Swap and Diode ORing Controller The MAX5963 dual hot-swap and diode ORing controller provides complete protection for dual-supply high availability systems. The device operates from 7.5V to

EB91

Abstract: EAA91
Contextual Info: EB91 MAINTENANCE TYPE DOUBLE DIODE Double diode with separate cathodes. HEATING: Indirect by A .C . or D .C .; se rie s or parallel supply Heater voltage Vf Heater current DIMENSIONS AND CONNECTIONS V 300 mA Dimensions in mm Base: Miniature m ax 19 F or further data

GWA19NC60HD

Abstract: GP19NC60HD GF19NC60HD STGB19NC60HDT4 STGF19NC60HD STGP19NC60HD STGW19NC60HD
Contextual Info: STGx19NC60HD STGWA19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB • Low on-voltage drop VCE(sat ■ Very soft Ultrafast recovery anti-parallel diode TAB 3 1 1 2 TO-220 ■ High frequency motor drives ■ SMPS and PFC in both hard switch and

PMLL4150

Abstract: SOD80C_115 PMLL4151 PMLL4153 smd diode marking code v3
Contextual Info: PMLL4153 High-speed diode Rev. 3 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diode fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package.

MAX3261

Abstract: MAX3261CCJ MAX3261ECJ
Contextual Info: 19-0323; Rev 5; 5/01 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver The MAX3261 is a complete, easy-to-program, single +5V-powered, 1.25Gbps laser diode driver with complementary enable inputs and automatic power control APC . The MAX3261 accepts differential PECL inputs

ST-1N4007

Abstract: 1N4007 st 1N4007 diode 1N4007 terminal diode 1N4007 1N4007 OF DIODE 1n4007 diode 1N4007 diode information of 1n4007 1n4007 diode datasheet
Contextual Info: Extract from the online catalog ST-1N4007 Order No.: 2802329 Component plug, with universal diode, to connect 2-pos. components into the basic terminal block, height: 19 mm, color: Gray

LLP-1006

Abstract: VBUS05L1 esd diode
Contextual Info: V i s h ay I n tertec h n o l o g y, I n c . Diodes - Low-Capacitance Bidirectional ESD Diode I INNOVAT AND TEC O L OGY VBUS05L1-DD1-G-08 N HN DIODES O 19 62-2012 Low-Capacitance Bidirectional ESD Diode in LLP1006 Package FEATURES • • • • ery low load capacitance: CD= 0.3 pF

ixys dsei 12-06

Abstract: ixys dsei TO263AA
Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 19 VRSM A VRRM V V 600 600 Type C VRRM = 600 V IFAVM = 20 A trr = 35 ns TO-263 AA NC A DSEI 19-06AS C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ①

Contextual Info: 1 4 THIS DRAWING 7 IS C O P Y R IG H T U N P U B L IS H E D . 19 2 3 RELEASED BY AMP IN COR PO RA TE D. FOR ALL PUBLICATION R IG H T S ,19 LOC R ES E R V E D . DI ST AF REVISIONS 50 DESCRIPTION LT R REVISED CONTINUOUS D FUR OPTIMUN UNE OF THE EDUE DIODE

flachstecker

Abstract: 6.3x0.8 k 151 transistor 6,3x0,8 b2hk scr 151 k 0,17 F C1219
Contextual Info: SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 58 G = 2,5 kg K 0.65 S G = 3,3 kg Flachstecker 6,3x0,8 62 105 4 266.5 200 135 K 0.17 F 19 C1 219 20 A1 A2 121 136 151 11 19 HK Gate Flachstecker D2 6.3x0.8 D1 K 0.36 S G = 2,9 kg M8 40

MAX1811

Abstract: MAX1811ESA selv
Contextual Info: 19-2024; Rev 1; 9/02 USB-Powered Li+ Charger Features ♦ Charges Single-Cell Li+ Batteries Directly from USB Port ♦ 0.5% Overall Charging Accuracy ♦ Minimal External Components ♦ Input Diode Not Required ♦ Automatic IC Thermal Regulation ♦ Preconditions Near-Depleted Cells

MCMA120UJ1800ED

Contextual Info: MCMA120UJ1800ED preliminary 3~ Rectifier Thyristor Module VRRM = 1800 V I DAV = 117 A I FSM = 500 A 3~ Rectifier Bridge, half-controlled high-side + free wheeling Diode Part number MCMA120UJ1800ED Backside: isolated 17 15 12 18 16 13 10 / 11 19 / 20 2/3

HR14

Abstract: 2596 Hirect diode Hirect HIND RECTIFIER rectifier diode
Contextual Info: Rectifier Diode SXXHN/HR14 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 2 V mA 12 A 19 A 250 A 310 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)

Contextual Info: Preliminary Datasheet RJL5020DPK R07DS0239EJ0500 Previous: REJ03G1733-0400 Rev.5.00 Jan 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.105  typ. (at ID = 19 A, VGS = 10 V, Ta = 25C)

D08S60C

Abstract: IDT08S60C JESD22 D08S60 D08S
Contextual Info: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior

bav20v

Abstract: BAV17 BAV17-TAP BAV17-TR BAV18 BAV18-TAP BAV18-TR BAV19 BAV20 BAV21
Contextual Info: BAV17 / 18 / 19 / 20 / 21 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 125 mg Packaging Codes/Options: TR / 10 k per 13 " reel 52 mm tape , 50 k/box

MAX1832EUT

Abstract: 3110 0001 mosfet MAX1832EVKIT MAX1833EUT-T MAX1834EUT-T MAX1835 MAX1835EUT-T MAX1832 MAX1832EUT-T 1B SOT23-6
Contextual Info: 19-1802; Rev 0; 10/00 ILABLE N KIT AVA EVALUATIO High-Efficiency Step-Up Converters with Reverse Battery Protection in SOT23-6 Features ♦ Reverse Battery Protection for DC-DC Converter and Load ♦ Up to 90% Efficiency ♦ No External Diode or FETs Needed