DIODE 18B Search Results

c8a zener

Abstract: Zener c8v Zener c8f Zener c8r C8E SOT23 cmpz5241 CMPZ5255B
Contextual Info: Central CMPZ5221B THRU CMPZ5262B TM Semiconductor Corp. SURFACE MOUNT 350mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial,

c8a zener

Abstract: CMPZ5267B CMPZ5221B CMPZ5222B CMPZ5223B CMPZ5224B CMPZ5225B CMPZ5226B CMPZ5227B CMPZ5228B
Contextual Info: Central CMPZ5221B THRU CMPZ5267B TM Semiconductor Corp. SURFACE MOUNT 350mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial,

CMPZ5223B

Abstract: Zener c8f CMPZ5221B CMPZ5222B CMPZ5224B CMPZ5225B CMPZ5226B CMPZ5227B CMPZ5228B CMPZ5229B
Contextual Info: Central CMPZ5221B THRU CMPZ5262B TM Semiconductor Corp. SURFACE MOUNT 350mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial,

diode ZENER C8S

Abstract: Zener c8f CMPZ5227B CMPZ5228B CMPZ5229B CMPZ5262B CMPZ5221B CMPZ5222B CMPZ5223B CMPZ5224B
Contextual Info: Central CMPZ5221B THRU CMPZ5262B TM Semiconductor Corp. SURFACE MOUNT 350mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial,

CMPZ5255B

Abstract: CMPZ5221B
Contextual Info: Central CMPZ5221B THRU CMPZ5262B TM Semiconductor Corp. SURFACE MOUNT 350mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial,

ZENER MARKING C8

Abstract: Zener SOT23 C8 Marking KC8L CMPZ5260B marking code C8
Contextual Info: Central" CMPZ5221B THRU CMPZ5262B Semiconductor Corp. SURFACE MOUNT 350mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial, enter­

Zener c8f

Abstract: 81E zener diode CMPZ5249B Zener c8v 18b marking datasheet CMPZ5237B DIODE C8P marking codes Zener diode 81A Zener Diode SOT-23
Contextual Info: Central CMPZ5221B THRU CMPZ5262B TM Semiconductor Corp. 350mW ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial, entertainment and computer applications. Higher

5252B

Abstract: Zener diode 81A
Contextual Info: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*

marking code zt sot23

Abstract: c8a zener C8E SOT23 Zener SOT23 C8 Marking marking code C8
Contextual Info: Central" CMPZ5221B THRU CMPZ5262B Sem iconductor Corp. 350mW ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial, enter­ tainment and computer applications.

diode ZENER C8S

Abstract: c8a zener CMPZ5221B CMPZ5222B CMPZ5223B CMPZ5224B CMPZ5225B CMPZ5226B CMPZ5227B CMPZ5228B
Contextual Info: Central CMPZ5221B THRU CMPZ5261B TM Semiconductor Corp. 350 mW ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial, entertainment and computer applications. Higher

Zener diode 81A

Abstract: 5252B 5246B 18c zener diode MARK 8F Zener diode 81c Zener diode 18A MMBZ5239B 5250B DIODE 8L sot 23
Contextual Info: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES L B L • Small Package : SOT-23. -_L : o MAXIMUM RATING Ta=25°C SYMBOL RATING

IRG4BC15UD

Contextual Info: PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

IRG4BC15UD

Contextual Info: PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

Contextual Info: PD - 95613 IRG4BC15UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

Contextual Info: PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

transistor irf 647

Abstract: 95613 TD 42 F
Contextual Info: PD - 95613 IRG4BC15UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

IRF530S

Abstract: diode RL 207
Contextual Info: PD -95564 IRG4BC20MD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

Contextual Info: PD -95564A IRG4BC20MD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

Contextual Info: PD -94908 IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

bzx55c

Abstract: diode 6v8a DIODE BZX55c bzx55c 12v 6v8a BZX55C 18 EQUIVALENT BZX55C 9V1 1 BZX55C datasheet diode 6V8C zener BZX55c 4v7
Contextual Info: BZX55C-BS SERIES 4.7V to 36V SILICON PLANAR ZENER DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * DO-35 Glass Axial Package * Best Suited For Industrial, Military and Space Applications. DO-35 * The Glass Passivated Diode Chip in The Hermetically Sealed

IRF530S

Abstract: diode code T2
Contextual Info: PD -95564 IRG4BC20MD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

5252B

Abstract: MARK 8E diode zener 8w L MMBZ5227B 8B MMBZ5250B Zener diode 81A MARK 8F MMBZ5251B MARKING 8F MMBZ5231B MMBZ5222B
Contextual Info: MMBZ5221B~5252B SEMICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES E B L L 3 G H A 2 D ・Small Package : SOT-23. 1 MAXIMUM RATING Ta=25℃ UNIT PD* 300

Contextual Info: PD -94908 IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

Contextual Info: PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode