DIODE 18A Search Results

DH60-14A

Contextual Info: DH60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 60 A 230 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

Contextual Info: DH20-18A preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 20 A 300 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

diode 343 18a

Abstract: 18a marking 41-L1 DH60-14A
Contextual Info: DH60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 60 A 230 ns Part number DH60-18A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

diode 343 18a

Abstract: dh20-18a dh20
Contextual Info: DH20-18A preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 20 A 300 ns Part number DH20-18A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DH60-14A

Contextual Info: DH60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 60 A 230 ns Part number DH60-18A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

electrical circuit diagram reverse forward move d

Abstract: H24 SMD DIODE
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.

K18120G3

Contextual Info: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

K18120G3

Abstract: ISL9K18120G3 AN-7528 TA49414 K1812
Contextual Info: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

Contextual Info: DH2x60-18A Sonic Fast Recovery Diode = High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number Backside: Isolated Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour

DH2x60-18A

Abstract: DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6
Contextual Info: DH2x60-18A tentative V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A tbd ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package:

Contextual Info: DH2x61-18A Sonic Fast Recovery Diode = High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number Backside: Isolated 2 1 3 4 Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour

C-150

Abstract: IRFI840G IRGIB6B60KD PD944
Contextual Info: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGIB6B60KD
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

DH2x60-18A

Contextual Info: DH2x60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A 230 ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: Bulletin I27280 11/06 GB15XF120K IGBT SIXPACK MODULE Features VCES = 1200V • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =18A • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

C-150

Abstract: IRGIB6B60KD ANSI PD-94427D
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

B1370 transistor

Abstract: B1370 b1370, transistor transistor b1370 r b1370 transistor b1370 e B1370 E 400
Contextual Info: PD-94427B IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

VCC400V

Abstract: C-150
Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: DH2x60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A 230 ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DH2x61-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs 1800 V 60 A 230 ns Part number DH2x61-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode sha11 be marked with Cathode Mark and Lot No.

diode MARKING CODE 18A

Abstract: sot 227b diode fast SOT227B
Contextual Info: DH2x61-18A Sonic Fast Recovery Diode VRRM = 1800 V I FAV = 2x t rr = 60 A 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DH2x61-18A Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc