DIODE 17A Search Results
DIODE 17A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 17A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the |
Original |
1n4151w-vdo-351n4151ll4151+5 | |
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Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the |
Original |
1n4151w-vdo-351n4151ll4151+5 | |
SOT23 DIODE marking CODE AVContextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF |
Original |
1n4448w-vdo-351n4448ll4448+7 | |
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Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the |
Original |
1n4151w-vdo-351n4151ll4151+5 | |
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Contextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF |
Original |
1n4448w-vdo-351n4448ll4448+6 | |
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Contextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF |
Original |
1n4448w-vdo-351n4448ll4448+6 | |
17DQ6B
Abstract: 17DQ6-B 6DQ6-B 17CU5 6DE4 tube 17ay3a 6dq6 17AY3-A 6CU5 Scans-0017311
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OCR Scan |
17ay3-a17dq6-b17cu517de4+7 | |
17BF11
Abstract: 17BE3 17BF11-A 17be3 tube 17AX3 6BF11 17bz3 22BW3 General electric diode 17bz3 tube
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OCR Scan |
17ax317bz317be317bf11+7 | |
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Contextual Info: BAS16D-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC |
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bas16d-vot-23bas16aec-q101+5 | |
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Contextual Info: BAS16D-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC |
Original |
bas16d-vot-23bas16aec-q101+5 | |
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Contextual Info: BAS16D-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC |
Original |
bas16d-vot-23bas16aec-q101+5 | |
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Contextual Info: 1N4148W-V-G Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data |
Original |
1n4148w-v-gaec-q1012002/95/ec2002/96/ec+5 | |
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Contextual Info: 1N4150W-V Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the |
Original |
1n4150w-vdo-351n4150ll4150+5 | |
vishay SOD-123 data code
Abstract: A4 marking diode SOD 123 1N4150W-V-GS08
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Original |
1n4150w-vdo-351n4150ll4150+8 | |
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Contextual Info: 1N4148W-V-G Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data |
Original |
1n4148w-v-gaec-q1012002/95/ec2002/96/ec+5 | |
APT0502Contextual Info: APT17M120JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode |
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apt17m120jcu3ot-227apt0502 | |
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Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics |
Original |
i27306gb15rf60ke7899612-mar-07 | |
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Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics |
Original |
i27306gb15rf60k | |
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Contextual Info: APT17M120JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode |
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apt17m120jcu3ot-227 | |
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Contextual Info: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for |
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uc1610uc3610slus339b | |
microswitch 12v bipolar
Abstract: nf710 MRD901 2sa968 emf lm324 inverter sensing circuit speed control of fan motor using LM324 calibration of phototransistor sanyo denki tachometer generator 2N2219A ADM1024ARU
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Original |
adm1024c0005924-leadru-24+10 | |
CMPZ4678
Abstract: CMPZ4679 CMPZ4680 CMPZ4681 CMPZ4682 CMPZ4683 CMPZ4684 CMPZ4685 CMPZ4686 CMPZ4717
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Original |
cmpz4678cmpz4717350mwot-23+13 | |
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Contextual Info: PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) |
Original |
7633airf6894mpbfirf6894mtrpbf | |
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Contextual Info: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible |
Original |
irf6898mpbfirf6898mtrpbf | |