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Contextual Info: Micro-displacement Sensor Z4D-A01 Dimensions Note: Features All units are in millimeters unless otherwise indicated. 175489-5 Tyco Electronics AMP • Uses position sensing diode/LED to detect 10 µm movement. • Sensor output minimally affected by color and reflection
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Z4D-A01
Abstract: tyco 179228-5 psd linear displacement sensor
Contextual Info: Micro-displacement Sensor Z4D-A01 Dimensions Note: Features All units are in millimeters unless otherwise indicated. 175489-5 Tyco Electronics AMP • Uses position sensing diode/LED to detect 10 µm movement. • Sensor output minimally affected by color and reflection
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electroabsorption modulator
Abstract: electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 35ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
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vsc7989g52356electroabsorption modulatorelectroabsorption modulator laser diode+3electroabsorption741 metal packageelectro-absorption modulator
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Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 38ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
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vs-s1558
Abstract: vss 1558 electroabsorption modulator laser diode 10ghz modulator driver Laser Diode 808 2 pin 1000 mw VSC7991 electroabsorption modulator 2296
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 30ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
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vsc7991g52321-0vs-s1558vss 1558+5electroabsorption modulator laser diode10ghz modulator driverlaser diode 808 2 pin 1000 mwelectroabsorption modulator2296
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vs-s1558
Abstract: electroabsorption modulator laser diode Laser Diode 808 2 pin 1000 mw CD 741 Electroabsorption modulator VSC7991 EAM laser vss1558 VMOD 741 metal package
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Maximum Rise/Fall Times of 38ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
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vsc7991g52321-0vs-s1558electroabsorption modulator laser diode+7laser diode 808 2 pin 1000 mwcd 741electroabsorption modulatoream laservss1558vmod741 metal package
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D1809N
Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode
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Contextual Info: Micro-displacement Sensor Z4D-A01 • Dimensions ■ Features • Uses position sensing diode/LED to detect 10 µm movement. • Sensor output minimally affected by color and reflection of an object. • Requires 5 VDC to give two analog outputs to the microprocessor
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Z4D-A01
Abstract: linear displacement sensor tyco 179228-5 circuit diagram for shortage detector in electronic
Contextual Info: Micro-displacement Sensor Z4D-A01 • Dimensions ■ Features • Uses position sensing diode/LED to detect 10 µm movement. • Sensor output minimally affected by color and reflection of an object. • Requires 5 VDC to give two analog outputs to the microprocessor
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z4d-a0110-bit10ionjb301-e3-01+3linear displacement sensortyco 179228-5circuit diagram for shortage detector in electronic
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TPIC2701
Abstract: POWER DMOS ARRAY
Contextual Info: TPIC2701 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY S LIS 019 - SEPTEM BER 1992 - REVISED O CTO BER 1992 Seven 0.5-A Independent Output Channels Integrated Clamp Diode With Each Output N PACKAGE TOP VIEW Low rDs(on). •0.5 Q Typical Output Voltage. . . 60 V
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tpic2701uln2001auln2004apower dmos array |
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20000W
Abstract: MAX-20 14706 BV 201 0149 2043C
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com MAX 20 Series PRELIMINARY HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR TVS DIODE
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0000wmil-std-75010x100020000w+4max-2014706bv 201 01492043c
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20000W
Abstract: MAX-20 20200c
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com MAX 20 Cell Series HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR TVS DIODE
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vs-s1558
Abstract: vss 1558 VSC7989-W FLD5F10NP PRBS23 VSC7989CD
Contextual Info: VSC7989 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Rise and Fall Times Less Than 35ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules
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FLD5F10NP
Abstract: 2296 VSC7989CD
Contextual Info: VSC7989 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Rise and Fall Times Less Than 35ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules
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TP1C2701
Abstract: TPIC2701 100U ULN2001A ULN2004A POWER DMOS ARRAY
Contextual Info: TPIC2701 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY S LIS 019 - SEPTEMBER 1992 - REVISED O CTO BER 1992 Seven 0.5-A Independent Output Channels Integrated Clamp Diode With Each Output N PACKAGE {TOP VIEW Low rDs on) •• ■0.5 Q Typical Output Voltage. . . 60 V
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tpic2701slis019tp1c2701uln2001a+3uln2004a100upower dmos array
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AEC-Q101-001
Abstract: AEC-Q101-REV-C jesd22-a105-c JESD22-A105C AEC-Q101-002 C2D20120D SiC BJT AECQ101-001 JESD47B JESD22-A104-B
Contextual Info: 1200-V ZERO RECOVERY Rectifiers Qualification Report Summary : March 2008 cation Report 1200-V Qualifi This report documents the qualification and reliability test results for the Cree 1200-V Schottky diode product families. This report also describes the test methods and criteria used the testing process.
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200-v100-mmo-220o-247+10aec-q101-001aec-q101-rev-cjesd22-a105-cjesd22-a105caec-q101-002c2d20120dsic bjtaecq101-001jesd47bjesd22-a104-b
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Ry110
Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #
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qd0d013534-61s1a1d207aa1d207e+16a1e207aa1e207ea1a210da1a210ea1b210da1b210ery110diode cross referencery104a2305ry115microwave associatesin3716diode ry24ry1011n3717
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Nippon Aleph
Abstract: Aleph Opto-Sensor 175489-3 amp Aleph International Opto-Sensor reflective 175489-3 CEM 3 reflective Opto-Sensor Sunlight sensor
Contextual Info: Reflective Type Opto Sensor OM-371-A8 INSTALLATION HOLE DIMENSIONS REFERENCE Tolerance: ±0.1mm Connector 175489-3 (AMP) 4.7 Optical Center Symbol 1 Collector 2 Cathode— Emitter 3 Anode 4.7 3.7 1 Terminal No. 2.3 11.7 11.7 7.8 15 11 3.2 1.4 3.2 15 11 3.7
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om-371-a8ul94v-2ul94v-0nippon aleph+9alephopto-sensor175489-3 ampaleph internationalopto-sensor reflective175489-3cem 3reflective opto-sensorsunlight sensor
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TP803
Abstract: TP804 TP815 TP800 TP805 TP801 TP802 TP812
Contextual Info: TOTAL POWER INTERNATIONAL, lNC T-S7-// TOTAL POWER IN TE RNA TIONAL OSE D | =10=17545 00D013Ö û | 15 WATT SINGLE and DUAL OUTPUT DC-DC CONVERTERS* TP800 SERIES Features: 4:1 Input Range 15W Isolated Outputs Up to 83% Efficiency Remote O n/O ff Control 100kHz Switching Frequency
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tp800100khztp801tp802+7tp803tp804tp80524vdc9-36vdctp815tp812
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diode IN007
Abstract: L32bb modicon 984 ANALOG OUTPUT 1753-RM002 1734-IB4 1753-IB20XOB8 1753-UM001 1753-IF8XOF4 LO735 slc 500 ladder logic profibus
Contextual Info: GuardPLC Controller Systems Bulletin 1753, 1754, 1755 User Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application, Installation and
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T129
Contextual Info: "T 40E D 0=1^1754 0062347 T I T i m TEXAS INSTR LIN/INTFC SNS5188, SN75188 QUADRUPLE LINE DRIVERS • D 1 3 2 3 , SEPTEM 8ER 1 9 8 3 -R E V IS E D SEPTEM BER 1986 M eets Specifications of EIA R S-2 3 2 -C SN 55188 . . . J PACKAGE SN 7S188 . . . D OR J PACKAGE
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MBR5340
Abstract: MOSFET 4166 cell phone charger 5.7 V circuit diagram philips thermistor 2322 640 PWM SWITCH MODE MAX1737 MAX1757 MAX1757EAI MAX1757EVKIT MAX1758
Contextual Info: 19-1754; Rev 0; 6/00 KIT ATION EVALU E L B A AVAIL Stand-Alone, Switch-Mode Li+ Battery Charger with Internal 14V Switch Features ♦ Stand-Alone Charger for Up to 3 Li+ Batteries ♦ ±0.8% Battery Regulation Voltage Accuracy ♦ Low-Dropout 98% Duty Cycle
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T101D103-CA
Abstract: MBR5340 cell phone charger 5.7 V circuit diagram MBR5340 diode
Contextual Info: 19-1754; Rev 0; 6/00 KIT ATION EVALU E L B A AVAIL Stand-Alone, Switch-Mode Li+ Battery Charger with Internal 14V Switch Features ♦ Stand-Alone Charger for Up to 3 Li+ Batteries ♦ ±0.8% Battery Regulation Voltage Accuracy ♦ Low-Dropout 98% Duty Cycle
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Contextual Info: 19-1754; Rev 0; 6/00 KIT ATION EVALU E L B A AVAIL Stand-Alone, Switch-Mode Li+ Battery Charger with Internal 14V Switch Features ♦ Stand-Alone Charger for Up to 3 Li+ Batteries ♦ ±0.8% Battery Regulation Voltage Accuracy ♦ Low-Dropout 98% Duty Cycle
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