DIODE 15 A Search Results

DIODE MARKING 534

Abstract: DSA 010
Contextual Info: DSA 15 IM 200 UC tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:

IXYS DSA 12

Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:

C-15-002-PD-SXXXX

Abstract: tosa laser diode 1550 nm Gbps C-15-002-RD-SXXXX sxxxx 2.5 Gbps laser diode
Contextual Info: 1550 nm 2.5 Gbps Laser Diode Module C-15-002-TD-SXXXX • C-15-002-RD-SXXXX • C-15-002-PD-SXXXX/XXX-X Features • Laser diode with multiple quantum well structure • Uncooled operation at –40 to +85˚C • High temperature operation without active cooling

DPG15I200

Abstract: DPG15I200PA
Contextual Info: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG15I400PM

Abstract: DPG15I400
Contextual Info: DPG 15 I 400 PM V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 15 A 45 ns Part number DPG 15 I 400 PM 3 1 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

diode 1 E6

Abstract: diode 4j
Contextual Info: DB 15-005 . DB 15-16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module 45 Square bridge Three-Phase Si-Bridge Rectifiers DB 15-005 . DB 15-16 Forward Current: 15 A

Contextual Info: HVGT CL03-15 15kV 200mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-15 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features

Contextual Info: DSA 15 IM 45IB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product 45 V 15 A 0.63 V 1 2 3 Applications: Features / Advantages: Very low Vf Extremely low switching losses

Contextual Info: DSB 15 IM 45IB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product 45 V 15 A 0.55 V 1 2 3 Applications: Features / Advantages: Very low Vf Extremely low switching losses

pin diode switch up to 10 GHz

Abstract: MSWSE-010-15 A 0503
Contextual Info: MSWSE-010-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-010-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 10W C.W. It has low insertion loss and medium isolation below 3.0 GHz.

Contextual Info: RURP1560 November 2013 Data Sheet 15 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 60 ns @ IF = 15 A The RURP1560 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of

RHR15120

Abstract: DIODE RHR15120 RHRP15120
Contextual Info: RHRP15120 November 2013 Data Sheet 15 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 75 ns @ IF = 15 A The RHRP15120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted

Contextual Info: FFP15S60S 15 A, 600 V, STEALTH II Diode Features Description • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFP15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

Contextual Info: RUR1S1560S November 2013 Data Sheet 15 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 60 ns @ IF = 15 A The RUR1S1560S is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies

Contextual Info: □IXYS DSEP 15-03 A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol DSEP 15-03 A Test Conditions Maximum Ratings per diode I fr m Tc = 135°C ; rectangular, d = 0.5

Contextual Info: SKKT 15, SKKH 15 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter SEMIPACK 0 Thyristor / Diode Modules -./0 -.0 -%.0 977 =77 5"77 5#77 !77 677 5$77 5377

AN-300

Abstract: LXA15T600
Contextual Info: LXA15T600 Qspeed Family 600 V, 15 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 15 600 120 4.6 0.45 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode.

Contextual Info: DSA15I45PA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15I45PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf

Contextual Info: DSEP 15-12CR HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 20 ns with soft recovery Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C DSEP 15-12CR A Isolated back surface * A = Anode, C = Cathode

philips 23

Abstract: Philips MARKING CODE BB133 BB150
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB150 VHF variable capacitance diode Product specification Supersedes data of 1996 May 03 File under Discrete Semiconductors, SC01 1998 Sep 15 Philips Semiconductors Product specification VHF variable capacitance diode

st smd diode marking code

Abstract: BB133 BB150 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB133 VHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1998 Sep 15 Philips Semiconductors Product specification VHF variable capacitance diode BB133 FEATURES • Excellent linearity

BB148

Abstract: BB158 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB148 VHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1998 Sep 15 Philips Semiconductors Product specification VHF variable capacitance diode BB148 FEATURES • Excellent linearity

BB134

Abstract: "MARKING CODE P4" st smd diode marking code BB135 BP317 CD 7640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB134 UHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1998 Sep 15 Philips Semiconductors Product specification UHF variable capacitance diode BB134 FEATURES • Excellent linearity

st smd diode marking code

Abstract: smd p9 10-10 BB149 BB159 BP317 smd diode 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB149 UHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1998 Sep 15 Philips Semiconductors Product specification UHF variable capacitance diode BB149 FEATURES • Excellent linearity