DIODE 1406 Search Results

10 gb laser diode

Abstract: Hitachi DSA0095 HL1513AF
Contextual Info: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406 Z Preliminary 1st Edition Feb. 2001 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

MMBD201

Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

Contextual Info: SÌ4812DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PR OD UC T SU M M AR Y V o»M 30 Id {A) R d s (Om) (& l O.Otfi @ Vqq = 10 V ±9 .0 0.028 @ VGs ~ 4-5 V ±7 .3 p \0 s & SCHO TTKY PRODUCT SUMM ARY Voson V«o (V) DIODE FORWARD VOLTAGE

Contextual Info: Doc No. TT4-EA-14068 Revision. 6 Product Standards Zener Diode DE2706800L DE2706800L Silicon epitaxial planar type Unit: mm For ESD protection DE2S068 in SSSMini2 type package 0.6 0.13 2 • Features 1.0 1.4  High ESD  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

BAT14T1

Abstract: il 074 14013 BAT14-014ES bat14
Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 14 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C -esa qualified • ESA/SCC Detail Spec. No.: 5106/014

D1809N

Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

T1189N

Abstract: T718N T1509N T358N T508N T588N T879N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VRRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl

135 D 4 e

Abstract: T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

Contextual Info: UFT14005 THRU UFT14060 DACO SEMICONDUCTOR CO., LTD. SU PER FAST DIODE MODULE TYP ES 140A Features 140 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 6 0 0V V rrm Non Isolated to Plate Power Mod TO-249AB MaximumRatings Operating Temperature : -55 °C to +175 °C

Contextual Info: New Ideal for smaller, lighter, slimmer mobile equipment that saves power. Low VF Schottky Barrier Diode Series „ Overview The MA277*/MA27D* Series of small-signal Schottky barrier diodes is ideally suited for mobile equipment that is designed to be more compact and lightweight. It is offered in a flat-lead ultracompact

GaAs photodiode Emcore

Contextual Info: PRODUCT BRIEF | FEBRUARY 10, 2004 1 x 4 GaAs PIN Photodiode Array Model 8485-1406 Features Data rates of 3.125 Gb/s per channel Excellent responsivity Uniform channel to channel characteristics Excellent crosstalk attenuation Low dark current EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is

T718N

Abstract: T1189N T1509N T1989N T358N T508N T588N T879N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung [°C] [A] [W] 25 302 431 482 609 943 1225 1406 1791 2025 2910 290 413 462 583

MAX1729

Contextual Info: kVA.tt-A.BLt > k i> jx iy k i 19-1406; R ev 0 ; 10/98 ECB a n d LCD D i spl ay Bias Suppl y w i t h A c c u r a t e O u t p u t Vol tage a n d T e m p er a t u r e C o m p e n s a t i o n The MAX1729 m icropow er step-up/step-dow n DC-DC converter is ideally suited for electrically controlled bire­

sec d 5072 transistor

Abstract: 1250h 2912 TRANSISTOR PNP D60H diode 5819 AT24C02B PWM 555 FAN CONTROL 127C 2N3904 2N3906
Contextual Info: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet GENERAL DESCRIPTION „ The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each

4GA0

Abstract: 3AA5
Contextual Info: SKM 400GA128D Absolute Maximum Ratings Symbol Conditions IGBT  % %78 9  ;" 3 5   SEMITRANSTM 4 SPT IGBT Modules SKM 400GA128D Features                                !" 

Contextual Info: SKM 100GB128DN Absolute Maximum Ratings Symbol Conditions IGBT  % %56 7  9" 1 3   SEMITRANSTM 2N SPT IGBT Module SKM 100GB128DN Preliminary Data Features                          

300GB124D

Contextual Info: SKM 300GB124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 ?   % SEMITRANSTM 3 Low Loss IGBT Modules SKM 300GB124D , 5 13 C  AC ? 5 163 7. Characteristics Symbol Conditions IGBT %.8        Typical Applications

Contextual Info: SKM 400GA173D Absolute Maximum Ratings Symbol Conditions IGBT *8 &* &*< =8 SKM 400GA173D SKM 400GA173D1S . 6 13 :2 7* 6 /  &  6 /2 C  AC .? 6 /32 7* =8      Typical Applications  +*           343'432 +* ,* "    432'/122 ,*

195GB063DN

Contextual Info: SKM 195GB063DN Absolute Maximum Ratings Symbol Conditions IGBT '  ( (:; ') ,>  ' SEMITRANSTM 2N Superfast NPT-IGBT Modules SKM 195GB063DN SKM 195GAL063DN SKM 195GAR063DN Features                        

145GB063DN

Contextual Info: SKM 145GB063DN Absolute Maximum Ratings Symbol Conditions IGBT ' ) )=> (' ,A  ( SEMITRANSTM 2N Superfast NPT-IGBT Modules SKM 145GB063DN SKM 145GAL063DN Features                     

Contextual Info: SKiiP 37AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter +$3  : +$3  1 ' 2/      !    1 (' 6748 2 ! ; - , = Values Units -(44 97 67&8 -'4 < (4 +   + > ?4 ### @ -'4 2 94 6%78 -'4   > ?4 ### @ -'4 2 -%4

Contextual Info: SKiiP 14AC065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter .&6  < .&6  4 * 5,    $!   4 *) 891: 5 $ = > / @ Values Units '11 *; 8*: 01 ? *1 .   . A 01 %%% B >)1 5 *' 8>;: 01   A 01 %%% B >)1 5 01 A 01 %%% B >*)

F 407 Diode

Abstract: 39AC12 64078
Contextual Info: SKiiP 39AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$3  : ,$3  1 ' 20      !    1 (' 67.8 2 ! ; 4 - = Values Units 4(. 4'7 64498 (9. < (. ,   , > *. ### ? 4'. 2 4%7 64(*8 (9.   > *. ### ? 4'. 2

Contextual Info: SKiiP 27AC065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter .%6  ; .%6  4 51    #    4 )( 907: 5 # < + / > Values Units &77 && 9(7: +)7 = )7 .   . ? @7 $$$ A +(7 5 && 9(7: +)7   ? @7 $$$ A +(7 5 +77