DIODE 1406 Search Results

10 gb laser diode

Abstract: Hitachi DSA0095 HL1513AF
Contextual Info: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406 Z Preliminary 1st Edition Feb. 2001 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

hitachi sr 2001

Abstract: HL1513AF LD501 10 gb laser diode Hitachi DSA0047
Contextual Info: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406 Z Preliminary 1st Edition Feb. 2001 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

hitachi sr 2001

Abstract: Hitachi DSA00280
Contextual Info: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406A Z Rev.1 Feb. 2002 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is

714 diode varicap

Abstract: hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE
Contextual Info: DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

MMBD201

Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

constant current led driver lm317

Abstract: PLD-500 lm317 5V PLD-1250 PLD-5000 5v laser diode PLD-10 0 332 002 156 relay thermistor lm317 op amp temperature controller circuit
Contextual Info: PLD Series Laser Diode Drivers General Description Features The PLD series of Laser Diode Drivers combines the high performance you expect from a Wavelength component with two distinct improvements: low voltage operation from +5 V DC, and an Active Current Limit.

UPS APC 800 CIRCUIT

Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
Contextual Info: Laser Diode Products for the OEM  INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications

IRKCL91-06S02

Abstract: ior e78996 158lf B40DL100S05 IRKJL91-02S02 E78996 ior fm50h 1406 diode 1RKC IRKCL91-04S02
Contextual Info: Power Modules International IOR' R e c tifie r Diode/Diode, Fast lF A V @ T c Part Nu m be r (7) (8) (V) V FM 50 H z Vr rm (6) >FS M d > (A) (°C ) (A) 60 H z (A) (2) (V) trr (5) (ns) A th JC DC (°C/W ) B40DL10S02 B40DL20S02 B40DL40S02 B40DL60S02 B40CL10S02

IRKCL91-02S02

Abstract: IRKCL91-04S02 IRKDL71-06S02 IRKDL56-06S02 B40DL100S05 IRKJL91-04S02 B40CL10S02 B40CL20S02 B40CL40S02 B40CL60S02
Contextual Info: 4ÖS5MS5 0010737 ì • SbE D INTE RNATIONAL RECTI FIE R International ì »r |Rectifier T - 0 3 'û i Power Modules, Diode/Diode, Fast V RRM !F AV Tc 50Hz 60Hz Part number (6 ) (7) V FM (8 ) (V) V (2 ) (5) R th J C D C (3) Case Case Outline Notes (A) (°C)

Contextual Info: SÌ4812DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PR OD UC T SU M M AR Y V o»M 30 Id {A) R d s (Om) (& l O.Otfi @ Vqq = 10 V ±9 .0 0.028 @ VGs ~ 4-5 V ±7 .3 p \0 s & SCHO TTKY PRODUCT SUMM ARY Voson V«o (V) DIODE FORWARD VOLTAGE

Contextual Info: Doc No. TT4-EA-14068 Revision. 6 Product Standards Zener Diode DE2706800L DE2706800L Silicon epitaxial planar type Unit: mm For ESD protection DE2S068 in SSSMini2 type package 0.6 0.13 2 • Features 1.0 1.4  High ESD  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

DE2-70

Contextual Info: Doc No. TT4-EA-14068 Revision. 5 Product Standards Zener Diode DE2706800L DE2706800L Silicon epitaxial planar type Unit: mm For ESD protection DE2S068 in SSSMini2 type package 0.6 0.13 2 • Features 1.0 1.4  High ESD  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

Contextual Info: Doc No. TT4-EA-14067 Revision. 5 Product Standards Zener Diode DE2706200L DE2706200L Silicon epitaxial planar type Unit: mm For ESD protection DE2S062 in SSSMini2 type package 0.6 0.13 2 • Features 1.0 1.4  High ESD  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

NF 034

Abstract: BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-123 Q62702D1345
Contextual Info: SIEMENS BAT 14 HiRel Silicon Schottky Diode Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • ^ esa qualified • ESA/SCC Detail Spec. No.: 5106/014

Contextual Info: Preliminary Technical Information IXFK120N30P3 IXFX120N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 300V 120A  27m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions

BAT14T1

Abstract: il 074 14013 BAT14-014ES bat14
Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 14 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C -esa qualified • ESA/SCC Detail Spec. No.: 5106/014

diode B2H

Abstract: thyristor 406 D1809N D269N D3301N D849N T1929N T380N T869N
Contextual Info: B2H - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 910 V 3600 V + - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

TDA8900

Abstract: MBC337 infocus a8900
Contextual Info: Objective specification Philips Semiconductors Photo diode signal processor . II I for compact disc players TnAoonA I UAO wU U m APPLICATIONS j_ . .1 pU] • Com patible for single and dual supply m • Suitable for home, car and portable applications B

D1809N

Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

Thyristor 1568

Abstract: D1069N D1809N D269N D3301N D749N D849N T 3361 D
Contextual Info: B2 - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 910 V 3600 V + - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D

NF 034

Abstract: marking A03 BAT DIODES BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103
Contextual Info: HiRel Silicon Schottky Diode BAT 14 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device,

Ksv1404

Contextual Info: mm TUNING DIODES KSV- I 40 I THRU KSV- 1412 SILICON HYPERABRUPT AXIAL & SURFACE MOUNT* The KSV 1400 Series of hyperabrupt tuning diode uses a unique manufacturing process to at 5 voltage points to assure greater uniformity produce a highly reliable product. This product