DIODE 13A Search Results

W66ESF002X13

Abstract: generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099
Contextual Info: APPLICATION NOTE Diode modulator for linear zoom. AN96099 Philips Semiconductors Diode modulator for linear zoom. Application Note AN96099 Abstract A short description is given on the existing diode modulator functioning and the changes which have to be made

Contextual Info: Bulletin I27279 11/06 GB10XF120K IGBT SIXPACK MODULE Features VCES = 1200V • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =13A • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft

93646

Contextual Info: Bulletin I27279 11/06 GB10XF120K IGBT SIXPACK MODULE Features VCES = 1200V • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =13A • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

k3525

Abstract: brake DIODE GB10RF120K
Contextual Info: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

bup410d

Abstract: BUP41
Contextual Info: SIEMENS BUP 41 OD IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP410D ^CE 600V 13A C Pin 3 E Package Ordering Code

Contextual Info: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Contextual Info: Tem ic TSAL6100 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 5 mm 'T-13A Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­

Telefunken tk 22

Contextual Info: Tem ic S e m i c o n d u c t o r s TSAL5300 GaAs/GaAlAs IR Emitting Diode in 0 5 mm 'T-13A Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­

Contextual Info: MON35W42 STANDARD MICROSYSTEMS CORPORATION Hardware Monitoring IC with Thermal Diode Interface FEATURES • Monitoring Items - • • 3 Thermal Inputs From Remote Thermistors or 2N3904 NPN-type Transistors or Pentium II Deschutes Thermal Diode Output

AO4704

Contextual Info: AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4704 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics.This device is suitable for

MOSFET and parallel Schottky diode

Abstract: AO4704
Contextual Info: AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4704 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics.This device is suitable for

AO4704

Abstract: MOSFET and parallel Schottky diode AO4704L
Contextual Info: AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4704 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics.This device is suitable for

9154

Abstract: 1N4154 LS4154 LS4154-GS08
Contextual Info: LS4154 VISHAY Vishay Semiconductors Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Electrical data identical with the device 1N4154 • Quadro Melf package Applications 9612009 Extreme fast switches Mechanical Data Case:QuadroMELF Glass Case SOD-80

1N4151

Abstract: LS4151 LS4151-GS08
Contextual Info: LS4151 VISHAY Vishay Semiconductors Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Electrical data identical with the device 1N4151 • Quadro Melf package Applications 9612009 Extreme fast switches Mechanical Data Case:QuadroMELF Glass Case SOD-80

Contextual Info: LS4151 VISHAY Vishay Semiconductors Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Electrical data identical with the device 1N4151 • Quadro Melf package Applications 9612009 Extreme fast switches Mechanical Data Case:QuadroMELF Glass Case SOD-80

Contextual Info: LS4154 VISHAY Vishay Semiconductors Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Electrical data identical with the device 1N4154 • Quadro Melf package Applications 9612009 Extreme fast switches Mechanical Data Case:QuadroMELF Glass Case SOD-80

CMDD4448

Contextual Info: Central CMDD4448 TM Semiconductor Corp. SUPERminiTM HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount

Contextual Info: BYV12 / 13 / 14 / 15 / 16 VISHAY Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Soft recovery characteristic Low reverse current Applications Fast rectification and switching diode for example for

marking r2 diode

Contextual Info: Central CMDD6001 TM Semiconductor Corp. SUPERminiTM SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed

CMKTC825A

Contextual Info: CMKTC825A SURFACE MOUNT ULTRAmini TEMPERATURE COMPENSATED SILICON ZENER DIODE SOT-363 CASE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTC825A type is a temperature compansated Zener reference diode. This device is ideal for applications requiring long

X8 diode zener

Abstract: X2 diode zener 3.3 volt zener diode CMDZ5258B diode marking x6 diode marking x7 5 volts ZENER DIODE CMDZ5232B CMDZ5261B diode marking 355
Contextual Info: Central CMDZ5221B THRU CMDZ5261B TM Semiconductor Corp. SUPERminiTM SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a