Alternates
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 1233 Search Results

    DIODE 1233 Equivalents

    Sorry, but there were no results for that search. Please update your search settings or try another search term.

    DIODE 1233 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 1233 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		RJS6005TDPN-EJ R07DS0899EJ0101 PRSS0003AN-A O-220AB-2L) PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6004WDPK R07DS0897EJ0100 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		RJS6005TDPN-EJ R07DS0899EJ0100 PRSS0003AN-A O-220AB-2L) PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		RJS6005WDPK R07DS0901EJ0100 PRSS0004ZE-A PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		RJS6004TDPP-EJ R07DS0896EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		RJS6004TDPN-EJ R07DS0895EJ0100 PRSS0003AN-A O-220AB-2L) PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		RJS6004TDPP-EJ R07DS0896EJ0102 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    PRSS0003ZE-A

    Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		RJS6004WDPQ-E0 R07DS0898EJ0101 PRSS0003ZE-A O-247) PRSS0003ZE-A PDF

    RJS6005WDPQ-E0

    Abstract: Nov01
    Contextual Info: Preliminary Datasheet RJS6005WDPQ-E0 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0902EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		RJS6005WDPQ-E0 R07DS0902EJ0100 PRSS0003ZE-A O-247) RJS6005WDPQ-E0 Nov01 PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0101 Rev.1.01 Nov 01, 2012 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		RJS6005TDPP-EJ R07DS0900EJ0101 PRSS0002ZA-A O-220FP-2L) PDF

    RJS6005TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		RJS6005TDPP-EJ R07DS0900EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ PDF

    Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		RJS6004TDPN-EJ R07DS0895EJ0101 PRSS0003AN-A O-220AB-2L) PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0101 Rev.1.01 Nov 01, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		RJS6004TDPP-EJ R07DS0896EJ0101 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    Contextual Info: Preliminary Data Sheet NX8369TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0043EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		NX8369TB R08DS0043EJ0100 NX8369TB OC-192 PDF

    Contextual Info: Preliminary Data Sheet NX8369TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0044EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		NX8369TS R08DS0044EJ0100 NX8369TS PDF

    10 gb laser diode

    Abstract: PX10160E
    Contextual Info: Preliminary Data Sheet NX8349TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0001EJ0100 Rev.1.00 Jul 26, 2010 DESCRIPTION The NX8349TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		NX8349TB R08DS0001EJ0100 NX8349TB OC-192 R08DS0001EJ0100 10 gb laser diode PX10160E PDF

    bc 7-25

    Abstract: NX7663JB-BC PX10160E
    Contextual Info: Preliminary Data Sheet NX7663JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION R08DS0011EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7663JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single


    Original     		NX7663JB-BC R08DS0011EJ0200 NX7663JB-BC 14-pin bc 7-25 PX10160E PDF

    bc 7-25

    Abstract: NX7563JB-BC PX10160E
    Contextual Info: Preliminary Data Sheet NX7563JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION R08DS0010EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single


    Original     		NX7563JB-BC R08DS0010EJ0200 NX7563JB-BC 14-pin bc 7-25 PX10160E PDF

    bc 7-25

    Abstract: NX7363JB-BC PX10160E
    Contextual Info: Preliminary Data Sheet NX7363JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION R08DS0009EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single


    Original     		NX7363JB-BC R08DS0009EJ0200 NX7363JB-BC 14-pin bc 7-25 PX10160E PDF

    Contextual Info: Preliminary Data Sheet NX8346TB, NX8346TY LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0032EJ0200 Rev.2.00 Dec 18, 2010 DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical


    Original     		NX8346TB, NX8346TY NX8346TB NX8346TY R08DS0032EJ0200 OC-192 PDF

    Contextual Info: Preliminary Data Sheet NX7338BF-AA LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION R08DS0004EJ0500 Rev.5.00 Jul 12, 2012 DESCRIPTION The NX7338BF-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.


    Original     		NX7338BF-AA R08DS0004EJ0500 NX7338BF-AA PDF

    Contextual Info: Preliminary Data Sheet NX7339BB-AA LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION R08DS0005EJ0400 Rev.4.00 Jul 12, 2012 DESCRIPTION The NX7339BB-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.


    Original     		NX7339BB-AA R08DS0005EJ0400 NX7339BB-AA PDF

    Contextual Info: Preliminary Data Sheet NX6410GH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION R08DS0040EJ0500 Rev.5.00 Jun 07, 2011 DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


    Original     		NX6410GH R08DS0040EJ0500 NX6410GH PDF