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    DIODE 1233 Search Results

    DIODE 1233 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 1233 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		rjs6005tdpn-ejr07ds0899ej0101prss0003an-ao-220ab-2l PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		rjs6004wdpkr07ds0897ej0200prss0004ze-a PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		rjs6004wdpkr07ds0897ej0100prss0004ze-a PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		rjs6005tdpn-ejr07ds0899ej0100prss0003an-ao-220ab-2l PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		rjs6005wdpkr07ds0901ej0100prss0004ze-a PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		rjs6004tdpp-ejr07ds0896ej0200prss0002za-ao-220fp-2l PDF

    Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		rjs6004tdpn-ejr07ds0895ej0100prss0003an-ao-220ab-2l PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		rjs6004tdpp-ejr07ds0896ej0102prss0002za-ao-220fp-2l PDF

    PRSS0003ZE-A

    Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		rjs6004wdpq-e0r07ds0898ej0101prss0003ze-ao-247 PDF

    RJS6005WDPQ-E0

    Abstract: Nov01
    Contextual Info: Preliminary Datasheet RJS6005WDPQ-E0 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0902EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		rjs6005wdpq-e0r07ds0902ej0100prss0003ze-ao-247+1nov01 PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0101 Rev.1.01 Nov 01, 2012 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		rjs6005tdpp-ejr07ds0900ej0101prss0002za-ao-220fp-2l PDF

    RJS6005TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		rjs6005tdpp-ejr07ds0900ej0200prss0002za-ao-220fp-2l PDF

    Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


    Original     		rjs6004tdpn-ejr07ds0895ej0101prss0003an-ao-220ab-2l PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0101 Rev.1.01 Nov 01, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		rjs6004tdpp-ejr07ds0896ej0101prss0002za-ao-220fp-2l PDF

    Contextual Info: Preliminary Data Sheet NX8369TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0043EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		nx8369tbr08ds0043ej0100oc-192 PDF

    Contextual Info: Preliminary Data Sheet NX8369TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0044EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		nx8369tsr08ds0044ej0100 PDF

    10 gb laser diode

    Abstract: PX10160E
    Contextual Info: Preliminary Data Sheet NX8349TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0001EJ0100 Rev.1.00 Jul 26, 2010 DESCRIPTION The NX8349TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		nx8349tbr08ds0001ej0100oc-19210 gb laser diode+1px10160e PDF

    bc 7-25

    Abstract: NX7663JB-BC PX10160E
    Contextual Info: Preliminary Data Sheet NX7663JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION R08DS0011EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7663JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single


    Original     		nx7663jb-bcr08ds0011ej020014-pinbc 7-25+1px10160e PDF

    bc 7-25

    Abstract: NX7563JB-BC PX10160E
    Contextual Info: Preliminary Data Sheet NX7563JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION R08DS0010EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single


    Original     		nx7563jb-bcr08ds0010ej020014-pinbc 7-25+1px10160e PDF

    bc 7-25

    Abstract: NX7363JB-BC PX10160E
    Contextual Info: Preliminary Data Sheet NX7363JB-BC LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION R08DS0009EJ0200 Rev.2.00 Sep 19, 2010 DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single


    Original     		nx7363jb-bcr08ds0009ej020014-pinbc 7-25+1px10160e PDF

    Contextual Info: Preliminary Data Sheet NX8346TB, NX8346TY LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0032EJ0200 Rev.2.00 Dec 18, 2010 DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical


    Original     		nx8346tbnx8346tyr08ds0032ej0200oc-192 PDF

    Contextual Info: Preliminary Data Sheet NX7338BF-AA LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION R08DS0004EJ0500 Rev.5.00 Jul 12, 2012 DESCRIPTION The NX7338BF-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.


    Original     		nx7338bf-aar08ds0004ej0500 PDF

    Contextual Info: Preliminary Data Sheet NX7339BB-AA LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION R08DS0005EJ0400 Rev.4.00 Jul 12, 2012 DESCRIPTION The NX7339BB-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.


    Original     		nx7339bb-aar08ds0005ej0400 PDF

    Contextual Info: Preliminary Data Sheet NX6410GH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION R08DS0040EJ0500 Rev.5.00 Jun 07, 2011 DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


    Original     		nx6410ghr08ds0040ej0500 PDF