AAY27
Abstract: AAY 45 germanium diode "Germanium Diode" germanium diode junction capacitance Q60101-Y
Contextual Info: AAY27 Germanium RF point-contact diode In addition to a high forward transconductance, the germanium diode AAY 27 displays small switching times and a good detector voltage efficiency at high frequencies. Therefore it is qualified for general purposes in RF as well as switching applications.
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aay27q60101-y100pf105khz+3aay 45germanium diodegermanium diode junction capacitance
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6R130G
Contextual Info: 6-Pack Diode 600/800 V 30 A FU JI Erosoë POW ER DIODE M O DULE • O utline D raw ings Features A ll the te rm in a ls and the m o u n tin g plate are e le c tric a lly isolated. These m o d u le s can be in sta lle d in the sam e c o o lin g fin as o th e r m o d u le s, th u s saving in s ta lla tio n
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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diode ru 3amdiode ru 4brg-2a diodediode ru 4am+6mn638sfmm-32spf0001red green green zener diodediode rj 4bsta464c
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D1JA20
Abstract: D1JA
Contextual Info: DIODE ARRAY D 1 J A 2 0 / D 1 J A 4 0 / D 1 J A 6 0 « F e a tu r e s Ä X 3 > -f- y 7" 4 *r i 9' 'i 1f — KöO Jf-7 X ' L t z r ^ i c — K Tw 'f T 'i -0 è h i »ÜicWfft, I t l ë a X I- a 7„ I- / < V + — > 7. j'Q;K L ì L t , •D 1 JA series are diode a rra y s consist of
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Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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bzd27cdo-219aaaec-q1012011/65/eu+42002/96/ecj-std-020mil-std-750j-std-002
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Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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bzd27cdo-219aaaec-q1012011/65/eu+42002/96/ecj-std-020mil-std-750j-std-002
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bzd27c
Abstract: diode z62
Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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bzd27cdo-219aa2002/95/ec2002/96/ec+5j-std-020mil-std-750j-std-002jesd22-b102diode z62
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BZD27C
Abstract: Z15 marking diode diode Z47 diode z36 cathode bzd27
Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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bzd27cdo-219aa2002/95/ec2002/96/ec+8j-std-020mil-std-750j-std-002jesd22-b102z15 marking diodediode z47diode z36cathode bzd27
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Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
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z15 Diode glass
Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
Contextual Info: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren
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bzd27cdo219aac200pz15 diode glass+9zener diode z33diode z27zener diode z12 15z15 marking diodediode z47marking code 24zmarking z6824z diodez68 marking
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Contextual Info: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY 64 P Diode and solder pads lacquered Strands soldered 1 Max. solder areas on fro n t and back side GS006636 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specitied.
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65e9
Abstract: TB370 AN7254 AN7260 ITF86116SQT
Contextual Info: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode
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GCA200AA60
Abstract: SanRex GCA200AA60 rj25 2M167 H125 SANREX welding machine
Contextual Info: IGBT MODULE GCA200AA60 UL; E76102 M SanRex IG PT Module GCA200AA60 is designed for Large cur rent high speed switching. T his module is insulated type, and contains two IG B T s in a series configuration and a fa st recovery diode (trr = 100ns) anti-parallelly connected to each IG BT.
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gca200aa60100ns00a/vces00v/vecs+9e7610295max100/i200/isanrex gca200aa60rj252m167h125sanrex welding machine
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 (May, 2008) SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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o03ed0dete7837h1-o03ed0-0805020nmsk 18752+9sk 187512sc5586si-18752fn651709332actb-34dsla6102sla4052si 18751
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11505A
Abstract: diode zener 1n4002 10D10 diode 11708a 30S4 DIODE ir 10d10 diode 30S10 diode DIODE 10D1 34301a IR 10D4
Contextual Info: Sem iconductors International Rectifier Zener Diodes & Silicon Rectifiers 10 W a ffs a f 95‘C B a s e - 5 % toteran ce co n tin u e d RE F E R E N C E T A B L E Max. D C Zener Current Zener Voltage Type Stock No. 1028.2T5 10Z9.1T5 10Z10T5 10Z11T5 10Z12T5
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11701d11702b10z10t5it703x+1610z11t511704r10z12t511705g10z13t511706e11505adiode zener 1n400210d10 diode11708a30s4 diodeir 10d10 diode30s10 diodediode 10d134301air 10d4
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ske V04
Contextual Info: SEEö TECHNO LO GY IN C I TE D • Ö11T233 QGG2Sb7 4 ■ EEPLD 20 RA 10Z T - 4 b - t^ - m November 1989 Features ■ CMOS EEPLD with Zero Standby Power: • 10 pA Typical, 150 pA Maximum ■ Operating Power Rises at Less Than ■ ■ ■ ■ ■ 100 Reprogramming Cycles, Minimum
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fgt313
Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156
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2sa11862sc40242sa12152sc4131+152sa12162sc4138100vac2sa12942sc4140fgt313transistor fgt313sla4052rg-2a diodesla5222fgt412rbv-3006fmn-1106ssla5096diode ry2a
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fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2sa7442sa7452sa7462sa747+162sa7642sa7652sa7682sa7692sa7702sa771fn651ctb-34d2sc5586hvr-1x7str20012sap17n2sd2619rbv-4156bsla40372sk1343
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488varistor ruse110ntransistor2sc54872sa2003se090nhigh voltage transistorse090rbv-4062sc5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa14882sc5586transistor 2sc5586diode ru 3am2sa2003microwave oven diodesingle phase bridge rectifier ic with output 1a2sc5487rg-2a diodedual mosfet 606tfd312s-f
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CTX12S
Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2sa7442sa7452sa7462sa747+162sa7642sa7652sa7682sa7692sa7702sa771ctx12ssla4038fn651sla4037sla1004ctb-34dsap17n2sc55862sk1343ctpg2f
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488se012se090se140nse115ndiode2sc5487sta474a8050ese110nsla-7611
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SE135N
Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa14882sa1492se135nse110nux-c2bse140nstr83159se130nstr2012transistor ac 51se140se115n
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa14882sa1492se110na4032se130nse005nse090nhigh hfe transistorfmqg5fmsla7022mse0123gu diode
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