DIODE 10B1 Search Results

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Contextual Info: HL-LC002H399W-10B10C8 White Description Features Dimension:22mmx18mm×2.80mm The White source color devices are made with GaN on Single color. sapphire White Light Emitting Diode. Emitting Color:White Easy installation with screws. Package:100pcs/white box.

5Z27 DIODE

Abstract: T 5Z27 ZENER 5z27 3-10B1A toshiba zener 5z27 5Z30 zener diode T 5z27
Contextual Info: 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27,5Z30 Unit: mm POWER SURGE SUPPRESSOR - - - designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over−voltage conditions. Excellent Clamp Voltage Characteristics

5Z27 DIODE

Abstract: 5z30 T 5Z27 ZENER 5z27
Contextual Info: 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27,5Z30 Unit: mm POWER SURGE SUPPRESSOR - - - designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over−voltage conditions. Excellent Clamp Voltage Characteristics

Contextual Info: 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27,5Z30 Unit: mm POWER SURGE SUPPRESSOR - - - designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over−voltage conditions. l Excellent Clamp Voltage Characteristics

5Z27 DIODE

Abstract: zener diode T 5z27 5z30
Contextual Info: 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27, 5Z30 Unit: mm POWER SURGE SUPPRESSOR - - - designed for use as a reverse power transient suppressor to protect automotive electrical equipment from over−voltage conditions. Excellent Clamp Voltage Characteristics

10B1

Abstract: 10B2 12B1 12B2 16B1 16B2 QS3165233 DIODE 15B2
Contextual Info: QS3165233 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 50Ω Damping Resistor QS3165233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

1Bn-12Bn

Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
Contextual Info: QS316212, QS3162212 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316212 QS3162212 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

DIODE 10B3

Abstract: 12b3 diode 11b3 DIODE 10B3 11B3 diode 6b3 10B1 QS316214 QS3162214 1A12A
Contextual Info: QS316214, QS3162214 ADVANCE INFORMATION QuickSwitch Products High-Speed CMOS 12-Bit 3-to-1 Bus-Select Switch Q QUALITY SEMICONDUCTOR, INC. QS316214 QS3162214 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

.xa2

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

Contextual Info: IDTQS3VH16233 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16233 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

10B1

Abstract: 10B2 12B1 12B2 QS3162233 QS316233
Contextual Info: QS316233, QS3162233 QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux Q QUALITY SEMICONDUCTOR, INC. QS316233 QS3162233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

10A1

Abstract: 10A2 10B1 11A1 11A2 12A1 12A2 SN74CBTS16213
Contextual Info: SN74CBTS16213 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS051B – MARCH 1998 – REVISED NOVEMBER 1998 DGG OR DL PACKAGE TOP VIEW 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels Package Options Include Plastic Thin

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

Contextual Info: IDTQS3VH16233 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH16233 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

SO56-2

Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
Contextual Info: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay

.xa2

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 PRELIMINARY FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

Contextual Info: QuickSwitch Products Semiconductor, I nc . High-Speed CMOS 12-ßit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5Q. bidirectional switches connect inputs

10A1

Abstract: 10B1 11A1 12A1 QS316292 diode 10b1 11B2 Diode
Contextual Info: QS316292, QS3162292 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 12-Bit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side QS316292 QS3162292 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC