DIODE 1079 Search Results

Contextual Info: ON Semiconductort Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top−of−the−line application requiring back−to−back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT−23 plastic package for

D2228N

Abstract: D448N D5809N D758N thyristor 1651
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

3C91C

Abstract: 3C92C 3c92
Contextual Info: 3C91C/ 3C92C TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The 3C91C/3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead hermetically sealed metal can. Applications

CNY18V

Abstract: CNY18IV CNY18 CNY18III
Contextual Info: CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for high reliability requirements. 96 12257

4n25 schematic

Abstract: 4N25 4N25 TEMIC 4N25 applications 4N26 4N25-28 4N27 IC 4N25 4n25 application Control 4N25
Contextual Info: TELEFUNKEN Semiconductors 4N25/ 4N26/ 4N27/ 4N28 Optocoupler with Phototransistor Output Description The 4N25/ 26/ 27/ 28 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages.

3C91C

Abstract: 3C91C telefunken 3C92C 3c91
Contextual Info: 3C91C/ 3C92C Optocoupler with Phototransistor Output Description The 3C91C/ 3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead hermetically sealed metal can. Applications Galvanically separated circuits for general purposes

RFN20NS3

Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS3SFH zSerise Standard Fast Recovery zLand Size Figure Unit : mm zDimensions(Unit : mm) RFN20 NS3S zApplications General rectification 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity

6392

Abstract: TEM00
Contextual Info: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1080-00080-2000-SOT02-0000 General Product Information

diode laser bragg

Abstract: GaAs diode nm TEM00
Contextual Info: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1080-00080-2000-TOC03-0000 General Product Information

diode 1079

Abstract: medical application of laser semiconductor laser 1064 nm laser diode
Contextual Info: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-1064-08000-4020-CMT04-0000 General Product Information Product Application

laser diode lifetime

Abstract: diode laser bragg TEM00 Thermistor 200 dbr laser
Contextual Info: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION BAL DFB/DBR Laser EYP-DBR-1080-00020-2000-BFY02-0000 General Product Information

TCST2000

Abstract: TCST-2000 TCST1000 Telefunken Phototransistor
Contextual Info: TCST1000/TCST2000 TELEFUNKEN Semiconductors Optoelectronic Interrupter with Aperture Description The TCST1000/TCST2000 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages. The elements are mounted on one leadframe in coplanar

4n25 vishay

Contextual Info: 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline package. The elements are mounted on one leadframe using

4N25GV

Abstract: 4N25V 4N25VS 4N35V 4N35V Series
Contextual Info: 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The 4N25V(G)/ 4N35V(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline

4n25 schematic

Abstract: 4n25 4N25 TEMIC 4N25-28 4N25S 4N26 4N26S 4N27 4N27S 4N28
Contextual Info: 4N25/ 4N26/ 4N27/ 4N28 Optocoupler with Phototransistor Output Description The 4N25/ 26/ 27/ 28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a

727 thyristor

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung + 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro

TCST-2000

Abstract: TCST1000
Contextual Info: Temic S e m i c o n d u c t o r s TCST1000/2000 Optoelectronic Interrupter with Aperture Description The TCST1000/TCST2000 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

727 thyristor

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung + 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

K0,05F

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro

ufnd110

Abstract: T3535
Contextual Info: UNITRODE TS CORP 9347963 dF U N I T R O D E CORP | =5347^3 92D D.Gia717 10797 3 D POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled

3TF3

Abstract: 2SK1079 3TF31 2SK107
Contextual Info: TOSHIBA Discrete Semiconductors 2S K 1079 Field Effect Transistor Silicon N Channel MOS Type L2-7t-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

AN1079

Abstract: AN-1079 IR0530
Contextual Info: Application Note AN-1079 Board Mounting 0.5A FlipKYTM By Hazel Schofield and Philip Adamson, International Rectifier For part numbers IR0520CSPTR/PBF, IR0530CSPTR/PBF, IR05H40CSPTR/PBF Table of Contents Page Introduction .2