DIODE 100V 10A Search Results

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220

100V 100A mos fet

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220

YA872C10R

Abstract: diode 100v 10a
Contextual Info: http://www.fujisemi.com YA872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C10 YA872C10

diode 100v 10a

Contextual Info: http://www.fujisemi.com YG872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F Applications

diode sy 710

Abstract: SBR100-10JS
Contextual Info: SBR100-10JS Ordering number : ENA0560 SANYO Semiconductors DATA SHEET SBR100-10JS Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

Contextual Info: SBR100-10JS Ordering number : ENA0560 SANYO Semiconductors DATA SHEET SBR100-10JS Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

Contextual Info: SBT100-10G Ordering number : ENA0689 SANYO Semiconductors DATA SHEET SBT100-10G Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features •

SBT100-10G

Contextual Info: SBT100-10G Ordering number : ENA0689 SANYO Semiconductors DATA SHEET SBT100-10G Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features •

Contextual Info: Ordering number : ENN7450 SBR100-10J Schottky Barrier Diode Twin Type • Cathode Common SBR100-10J 100V, 10A Rectifier Application • Package Dimensions High frequency rectification (switching regulators, converters, choppers). unit : mm 1320 [SBR100-10J]

SBR100-10J

Contextual Info: Ordering number : ENN7450 SBR100-10J Schottky Barrier Diode Twin Type • Cathode Common SBR100-10J 100V, 10A Rectifier Application • Package Dimensions High frequency rectification (switching regulators, converters, choppers). unit : mm 1320 [SBR100-10J]

sanken power transistor

Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters

Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters

FMEN-220A

Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters

MBRD10U100

Abstract: 10a45
Contextual Info: SEMICONDUCTOR MBRD10U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K D L : IO=10A. ・Repetitive Peak Reverse Voltage B : VRRM=100V.

Contextual Info: SEMICONDUCTOR B10A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=10A Tc=110 . Repetitive Peak Reverse Voltage : VRRM=100V.

MBRF10U100CTA

Abstract: mbrf10u100ct
Contextual Info: SEMICONDUCTOR MBRF10U100CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current DIM B E G : IO=10A. ・Repetitive Peak Reverse Voltage : VRRM=100V.

mbrf*10u100ct

Abstract: mbrf10u100ct TO220I mbrf10u100
Contextual Info: SEMICONDUCTOR MBRF10U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current DIM B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=100V.

MBRF10100CT

Contextual Info: SEMICONDUCTOR MBRF10100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=100V. K

V1660

Abstract: B10A100VIC
Contextual Info: SEMICONDUCTOR B10A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=10A Tc=120 . Repetitive Peak Reverse Voltage : VRRM=100V.

mbrf*10u100ct

Abstract: mbrf10u100
Contextual Info: SEMICONDUCTOR MBRF10U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current DIM B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=100V.

dc power supply mbr10100ct Schottky diode

Abstract: MBR10100CT
Contextual Info: SEMICONDUCTOR MBR10100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C F Average Output Rectified Current E : IO=10A. G B Repetitive Peak Reverse Voltage Q : VRRM=100V. I

Z3PK10100DH

Contextual Info: ZOWIE Schottky Barrier Diode 100V / 10A Z3PK10100DH OUTLINE DIMENSIONS Case : Z3PAK FEATURES * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF