DIODE 100MA 20V Search Results

100MHZ

Abstract: marking code TS
Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.

100MHZ

Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.

100MHZ

Contextual Info: 1SS277WT BAND-SWITCHING DIODE Features • Small plastic SMD package • Continuous reverse voltage: max. 35V • continuous forward current:max.100mA • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω. Applications • Low loss band switching in VHF television tuners.

100MHZ

Contextual Info: 1SS277WT BAND-SWITCHING DIODE Features • Small plastic SMD package • Continuous reverse voltage: max. 35V • continuous forward current:max.100mA • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω. Applications • Low loss band switching in VHF television tuners.

202E

Abstract: XR-85 rf 06
Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LTD. XR-85 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 20V FORWARD CURRENT: 100mA FEATURES DO - 34 • Small glass structure ensures high reliability • Low leakage • High temperature soldering guaranteed:

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA USCD012H THRU USCD014H OUTLINE DIMENSIONS FEATURES 0.05 1.6 ± 0.1 20 0.70 Typ. R 0. 0.35 ± 0.05 APPLICATION Switching mode power supply applications Portable equipment battery applications High frequency rectification

C0034

Abstract: 0C70 APS1000 u0440 K045
Contextual Info: APS1000 SERIES SURFACE MOUNT SILICON PIN SWITCHING DIODE DESCRIPTION: PACKAGE STYLE SOT-23 SILICON PIN SWITCHING DIODE IN A SOT-23 PACKAGE MILUMETERS DIM A Absolute Maximum Ratings 1 V P.D. 100MA AS SHOWN 250mW @ TC=25°C MIN 28C MAX 3.04 INCHES MIN 01102

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA USCD012 THRU USCD014 FEATURES OUTLINE DIMENSIONS Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA Thin flat package MSCD012S THRU MSCD014S OUTLINE DIMENSIONS Case : 0805-S FEATURES Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA MSCD012 THRU MSCD014 FEATURES OUTLINE DIMENSIONS Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA MSCD012H THRU MSCD014H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA USCD012H THRU USCD014H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA MSCD012H THRU MSCD014H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency

MARK F

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA USCD012H THRU USCD014H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency

mark Ja sod323

Contextual Info: ZOWIE Schottky Barrier Diode 20V~40V / 100mA Thin flat package MSCD012SH THRU MSCD014SH OUTLINE DIMENSIONS Case : 0805-S FEATURES Halogen-free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame

XBS013R1DR-G

Abstract: XBS013R1DR
Contextual Info: XBS013R1DR-G ETR1617-005 Schottky Barrier Diode, 100mA, 30V Type •APPLICATIONS ■FEATURES ●Low Current Rectification Ultra Small Package Low IR ■PACKAGING INFORMATION ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARMETER SYMBOL RATINGS UNITS VRM 30 V Repetitive Peak Voltage

XBS013V1DR

Abstract: XBS013V1DR-G
Contextual Info: XBS013V1DR-G ETR1618-005 Schottky Barrier Diode, 100mA, 30V Type •APPLICATIONS ■FEATURES ●Low Current Rectification Ultra Small Package Low VF ■PACKAGING INFORMATION ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARMETER SYMBOL RATINGS UNITS VRM 30 V Repetitive Peak Voltage

ir10 diode

Abstract: c177
Contextual Info: APS1000 SERIES SURFACE MOUNT SILICON PIN SWITCHING DIODE DESCRIPTION: PACKAGE STYLE SOT-23 SILICON PIN SWITCHING DIODE IN A SOT-23 PACKAGE D ili A B C D G H J K L S V Absolute Maximum Ratings I 100MA V AS SHOWN P.D. 250mW @ TC=25°C MILUKETERS MIN MAX 28C

AT78L05

Abstract: AT78L12 24V to 15V REGULATOR IC SOT-89-3L AN78L00 LM78L00 AT78L00 AT78L08
Contextual Info: AT78L00 100mA Positive Voltage Regulator Immense Advance Tech. DESCRIPTION FEATURES The AT78L00 series of three terminal positive regulators is available with several fixed output voltages making them useful in a wide range of applications. When used as a zener diode/resistor

PJRB461F

Abstract: Diode Marking .004
Contextual Info: PJRB461F SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 25 Volts CURRENT 700 mA SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Extremely fast switching speed .087(2.2) .078(2.0) .004(.10)MIN. • IF guaranteed at 0.7A • Ultra-Low VF(0.28V typical @100mA,75 OC

EM6M2

Abstract: diode marking U22
Contextual Info: TYPE PRODUCTS EMT6 PAGE EM6M2 1.TYPE EM6M2 2.STRUCTURE SILICON N-CHANNEL / P-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/5 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 Tr1 : Nch 》 DRAIN-SOURCE VOLTAGE VDSS ・・・ 20V GATE-SOURCE VOLTAGE VGSS ・・・ ±8V

Contextual Info: TENTATIVE RV3C001ZP Pch -20V -100mA Small Signal MOSFET Data Sheet lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 100mW VML0604 lInner circuit lFeatures (1) Gate (2) Source (3) Drain 1) Ultra Small Package (0.6x0.4×0.36mm) 2) Low voltage drive (-1.2V) makes this

Contextual Info: RV2C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 100mW lFeatures VML1006 (3) (2) (1) lInner circuit 1) Low voltage drive(-1.2V) makes this device ideal for partable equipment. (1) Gate (2) Source (3) Drain

RV1C001ZP

Contextual Info: RV1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 100mW lFeatures (3) VML0806 (2) (1) lInner circuit 1) The world smallest Package (0806size). (1) Source (2) Gate (3) Drain 2) Low voltage drive(-1.2V) makes this