DIODE 1007 Search Results
DIODE 1007 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 1007 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LTC4358
Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
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ltc435814-pin16-leadltc4355+12 | |
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Contextual Info: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat |
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ltc435814-pin16-leadltc4355+3 | |
BAP51-02
Abstract: BP317
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m3d319bap51-02od523mam405+2 | |
109 DIODEContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance. |
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m3d319bap50-02od523mam405+2 | |
DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
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od110innovat27scb63diode a6 sod110+9 | |
SMD diode sg 46
Abstract: SMD diode sg 03
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bap50-03sca61smd diode sg 46smd diode sg 03 | |
diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
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bap51bap51-03diode a62diode smd ed 74+1 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance |
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m3d319bap63-02od523mam405+1 | |
marking code k1
Abstract: BAP51-02 smd marking KM
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m3d319bap51-02od523mam405+3 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance |
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m3d319bap63-02od523mam405+1 | |
smd code marking A8 diode
Abstract: smd diode A8 smd diode code a8
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m3d049bap50-03od323mam406+4 | |
BAP51-03Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance |
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m3d049bap51-03od323mam406+1 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD |
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m3d3191ps79sb10sc-79mam403+2 | |
smd schottky diode marking 72Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic |
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m3d0491ps76sb70od323mam283+3 | |
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1PS59SB20Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection |
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m3d1141ps59sb20sc-59mlc357+3 | |
BAS240
Abstract: BP317
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m3d154bas240mam214od110+2 | |
BAS270
Abstract: BP317 BAS27
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m3d154bas270mam214od110+3 | |
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Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS76SB70 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES |
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1ps76sb70sca60115104/00/01/pp8 | |
ZENER DIODE t2
Abstract: philips data book zener diode AS 108-120 BP317 BZD142 BZD142-68 philips zener diode IEC 60060-1
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m3d119bzd142mgu216613510/01/pp8+7 | |
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Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS76SB40 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES |
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1ps76sb40sca60115104/00/01/pp8 | |
1PS76SB21
Abstract: BP317
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1ps76sb21sca60115104/00/01/pp8bp317 | |
BB143
Abstract: BP317 marking code l
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m3d319bb143mbl026125004/00/01/pp8+2 | |
BB142
Abstract: st smd diode marking code BP317
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m3d319bb142mbl026125004/00/01/pp8+2 | |
ST tvs diode sma
Abstract: BP317 BZG142 BZG142-68 philips zener diode
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m3d168bzg142do-214acmgu215+5 | |