DIODE 100 6T Search Results

Contextual Info: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode

GE Refrigerator Compressor

Abstract: 400v 20A ultra fast recovery diode 2245-2
Contextual Info: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode

irg7ic

Abstract: transistor IC 12A 400v IRG7
Contextual Info: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner

irg7ic

Contextual Info: IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 18A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner

ci 4946

Abstract: IRG7PH42UDPBF 4946 irg7ph42ud C-150 IRG7PH42UD-EP irg7ph42ud-e
Contextual Info: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

irg7ph35udpbf

Abstract: irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD
Contextual Info: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

ci 4946

Abstract: IRG7PH42UD-EP irg7ph42ud-e IRG7PH42UDPBF
Contextual Info: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

IRGP4650D

Abstract: IRGP4650DPBF irgp4650dp
Contextual Info: IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100°C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 35A E n-channel Applications • Industrial Motor Drive

qmv695-1af5

Abstract: qmv695 laser diode symbol schematic "low cost laser diode driver" NORTEL laser 120R A0685475 YA07 C33031 QMV6
Contextual Info: YA07 Laser Diode Driver with Mean Power Control Data Sheet Features Mean power control Highly integrated; Minimal external components needed Bias current range: 5 mA to 100 mA Modulation current range: 5 mA to 80 mA Fully differential data input, PECL and CML compatible

ci 4946

Abstract: CT4-200 irg7ph42udpbf C-150 IRG7PH42UD-EP
Contextual Info: PD - 97391A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Contextual Info: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

IRGR4045D

Contextual Info: IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features •          IC  6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

IRG7PH46UDPBF

Abstract: 600v 20a IGBT driver igbt 40A 600V P channel 600v 20a IGBT C-150
Contextual Info: PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

IRGP4660

Abstract: IRGP4660D-EPBF
Contextual Info: IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 60A, TC = 100°C C C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 48A E n-channel Applications • Industrial Motor Drive

Contextual Info: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Contextual Info: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

IRG7PH46UDPBF

Abstract: 028005
Contextual Info: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Contextual Info: PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

Contextual Info: PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

Contextual Info: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM

C-150

Abstract: transistor IC 12A 400v
Contextual Info: PD - 97347 IRGI4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low switching losses 5 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM

Contextual Info: PD - 97397 IRGI4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 5 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM 

C-150

Abstract: 80uh
Contextual Info: PD - 97396 IRGI4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses 5 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM 

Contextual Info: IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient