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    DIODE 032 Search Results

    DIODE 032 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 032 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SONY SLD323V High Power Density 1 W Laser Diode Description Package Outline_ Unit : mm The S L 0323V is a high power, gain-guided laser diode it r ir « A t a produced by MOCVD method*'. Compared to the SLD300 Series, this laser diode has a high brightness


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    sld323vsld30000ed1d1002d102 PDF

    diode BY 028

    Abstract: 631 DIODE SMD SMD Diode 631 SMD Switching diode SOD323 DIODE 33 25 SWITCHING DIODE ny smd transistor SOD-123 CMOD2004 BY 225 diode
    Contextual Info: New Product Announcement Sample Devices Reduce your board space requirements with available Ultramini upon request. TM SOD-523 Actual Size Available technologies include: Switching Diode Schottky Diode High Voltage Switching Diode Ultra Low Leakage Switching Diode


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    od-523od-123od-323-sod-523+10diode by 028631 diode smdsmd diode 631smd switching diode sod323diode 33 25switching diodeny smd transistorsod-123cmod2004by 225 diode PDF

    laser transmitter circuit diagram

    Abstract: Laser Diode 10 pin 1300 laser diode rise time 780nm laser diode module laser diode 2 Wavelength Laser Diode 6 pin laser diode 780nm laser diode 8 mW 780NM Laser-Diode apc be 500 ups
    Contextual Info: 19-0323; Rev 2; 8/95 Single +5V, Fully Integrated, 1.2Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel 622Mbps SDH/SONET _Features ♦ Rise Times Less than 250ps


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    531mbps1062mbps622mbps250ps+13max3261ccjmax3261c/d21-0054blaser transmitter circuit diagramlaser diode 10 pin1300 laser diode rise time780nm laser diode modulelaser diode2 wavelength laser diode6 pin laser diode780nm laser diode 8 mw780nm laser-diodeapc be 500 ups PDF

    laser driver TTL circuits

    Abstract: 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07
    Contextual Info: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel _Features ♦ Rise Times Less than 250ps ♦ Differential PECL Inputs


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    25gbps531mbps1062mbps250ps+10max3261ccjmax3261ecjmax3261e/dlaser driver ttl circuits4023n6 pin laser diodeautomatic laser power controlmax32614015nmax3261-fg07 PDF

    str 6707

    Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic


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    m3d177bat254od110mam214+7scds48117021/1100/01/pp8str 6707bp317diode smd code 805smd 2211smd schottky diode marking 72 PDF

    n004

    Abstract: MIB57T-K ML303
    Contextual Info: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 DESCRIPTION " 0 . 196 MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.


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    mib57t-kml30310/iis100ma+2150mwn004 PDF

    MIB57T-K

    Abstract: ML303
    Contextual Info: MEB57T-K INFRARED EMITTING DIODE 04.98 ’ 0.196 DESCRIPTION MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303. 6.7


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    meb57t-kmib57t-kb57t-kml303+2100ma150mw PDF

    MIB57T-K

    Abstract: ML303
    Contextual Info: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57T-K is a GaAIAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.


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    mib57t-kml30310/lts100ma+24351g150mw PDF

    MAX3261

    Abstract: MAX3261CCJ MAX3261ECJ
    Contextual Info: 19-0323; Rev 5; 5/01 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver The MAX3261 is a complete, easy-to-program, single +5V-powered, 1.25Gbps laser diode driver with complementary enable inputs and automatic power control APC . The MAX3261 accepts differential PECL inputs


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    25gbpsmax3261max3261ccjmax3261ecj PDF

    MAX3261

    Abstract: MAX3261CCJ MAX3261ECJ 4023N
    Contextual Info: 19-0323; Rev 5; 5/01 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver The MAX3261 is a complete, easy-to-program, single +5V-powered, 1.25Gbps laser diode driver with complementary enable inputs and automatic power control APC . The MAX3261 accepts differential PECL inputs


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    25gbpsmax3261max3261ccjmax3261ecj+14023n PDF

    step recovery diode

    Abstract: 5082-0320 "Step Recovery Diode"
    Contextual Info: 5082-0320 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0320 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: PACKAGE STYLE 42 • Replacement for HP 5082-0320 • POUT = 400 mW min. @ 10 GHz X 5


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    step recovery diode5082-0320 PDF

    Contextual Info: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver Description The MAX3261 is a com plete, easy-to-program , single +5V-pow ered, 1.25G bps laser diode driver with com ­ plementary enable inputs and automatic power control APC . The MAX3261 accepts differential PECL inputs


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    25gbps250psmax3261 PDF

    Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SR05 Series SR05 Series 5V 25A Diode Array RoHS Pb GREEN Description The SR05 consists of four, low capacitance steering diodes and a low voltage TVS diode that provide protection against ESD and lightning surge events. Each channel or I/O pin


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    ot143iec61000-4-2iec61000-4-4 PDF

    sr05

    Abstract: TO253 SOT143 E1 SR0502CTG marking 003 sot143
    Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SR05 Series SR05 Series 5V 25A Diode Array RoHS Pb GREEN The SR05 consists of four, low capacitance steering diodes and a low voltage TVS diode that provide protection against ESD and lightning surge events. Each channel or I/O pin


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    iec61000-4-2iec61000-4-45/50nsot143+8iec61000-4-510basetspecification--sot143sr05to253sot143 e1sr0502ctgmarking 003 sot143 PDF

    TO253

    Abstract: 503B SOT143
    Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SR05 Series SR05 Series 5V 25A Diode Array RoHS Pb GREEN Description The SR05 consists of four, low capacitance steering diodes and a low voltage TVS diode that provide protection against ESD and lightning surge events. Each channel or I/O pin


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    ot143iec61000-4-2iec61000-4-4to253+1503b sot143 PDF

    "Infrared LED"

    Abstract: infrared receiver diode led HIR4254C lens photodiode phototransistor 850nm 5mm LED
    Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIH-425-032 REV : PAGE : 1.0 1/8 5mm Infrared LED MODEL NO : HIR4254C  Features : High radiant intensity Peak wavelength p=850nm View angle 60 High reliability  Description : EVERLIGHT’s Infrared Emitting Diode HIR4254C is a high intensity diode, molded in a


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    dih-425-032hir4254c850nm500pcs/1bag6+4infrared ledinfrared receiver diode ledlens photodiode phototransistor850nm 5mm led PDF

    4245

    Abstract: SMD M1B BAT56 SMD M1B diode
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current


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    bat56scd244245smd m1b+1smd m1b diode PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241 PDF

    SOD-110

    Abstract: BAT254 smd schottky diode marking 72 Diode smd code 805 MCC SMD DIODE SMD MARKING 541 DIODE str f 6707 MAR 733
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 handbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION


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    m3d177bat254od110mam214+9scds48117021/1100/01/pp8sod-110smd schottky diode marking 72diode smd code 805mcc smd diodesmd marking 541 diodestr f 6707mar 733 PDF

    smd diode 708

    Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed


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    bat93scd24smd diode 708smd m1b diode+6m1b diode smdcd 4938silicon schottky diode sod123smd m1bstr 541ir 7811 PDF

    DIODE A6 sod110

    Abstract: bas216
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET A6 andbook, halfpage M3D179 BAS216 High-speed switching diode Product specification Supersedes data of April 1995 1996 Apr 03 Philips Semiconductors Product specification High-speed switching diode BAS216 FEATURES APPLICATIONS


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    m3d179bas216od110scds48+2117021/1200/03/pp12diode a6 sod110 PDF

    Contextual Info: CRO MI32T-L INFRARED EMITTING DIODE DESCRIPTION MI32T-L is GaAlAs infrared emiitting diode molded in 3mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current Continuous Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation


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    mi32t-l100ma160mw PDF

    smd schottky diode marking 72

    Abstract: smd schottky diode 82 BAT74S MRC129 smd diode 777
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage MBD128 BAT74S Schottky barrier double diode Product specification Supersedes data of 1997 Nov 07 File under Discrete Semiconductors, SC01 1998 Feb 06 Philips Semiconductors Product specification Schottky barrier double diode


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    mbd128bat74ssca57115104/1200/02/pp12+4smd schottky diode marking 72smd schottky diode 82mrc129smd diode 777 PDF

    Contextual Info: RClamp0508M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive


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    do000 PDF