DIODE 028 Search Results
DIODE 028 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 028 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
diode BY 028
Abstract: 631 DIODE SMD SMD Diode 631 SMD Switching diode SOD323 DIODE 33 25 SWITCHING DIODE ny smd transistor SOD-123 CMOD2004 BY 225 diode
|
Original |
od-523od-123od-323-sod-523+10 | |
laser rise time
Abstract: APP2934 MAX3701 note application laser diode laser circuit diagram HFDN-28 violet laser diode laser diode schematic HFDN-02
|
Original |
max3701hfdn-028com/an2934an2934+8 | |
hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
|
Original |
25y-3n25y-3s25-3x1071-a+13 | |
|
Contextual Info: Surface Mount Bidirectional TVS Resistors Diode Array Make Possible Surface Mount Bidirectional N006LF Series TVS Diode Array Surface Mount Bidirectional idirectional protection for up to 4 lines data lines TVS Diode Array ow operating and clamping QDN006LF |
Original |
n006lfqdn006lf | |
melf diode color
Abstract: glass mini melf diode MELF DIODE color bands LL4148 r20V LL4148 diode galaxy electrical
|
Original |
ll41481111reverse500mwmelf diode color+4 | |
LL4148 diode galaxy electrical
Abstract: MELF DIODE color bands LL4148 LL4148 melf
|
Original |
ll41481111reverse500mwll4148 diode galaxy electrical+2 | |
diode A157
Abstract: BAT86
|
Original |
bat86do-34c-120bat86rev100506e+1 | |
LL4148
Abstract: DIODE LL4148
|
Original |
ll41481111reverse500mwdiode ll4148 | |
|
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAT86 DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION |
Original |
bat86do-34c-120bat86rev100506e | |
LL4448Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case |
Original |
ll44481111reverse500mw | |
|
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case |
Original |
ll44481111reverse500mw | |
|
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case |
Original |
ll41481111reverse500mwave268010 | |
diode in 5401
Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
|
OCR Scan |
tied87tied88x10-3poss75042+6 | |
RS-432
Abstract: RS432 rs 432
|
Original |
qdn006lf006lfrs-432rs432+1 | |
|
|
|||
|
Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
pd-95321irgib6b60kdpbfo-220 | |
C-150
Abstract: IRGIB6B60KD
|
Original |
pd-94427dirgib6b60kdo-220c-150 | |
transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
|
Original |
irgib15b60kd1o-220irfi840gtransistor c 2335+1 | |
|
Contextual Info: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
pd-94427airgib6b60kdo-220irfi840g | |
transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
|
Original |
4599airgib15b60kd1o-220irfi840g+3 | |
diode 10a 400v
Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
|
Original |
pd-94576airgib10b60kd1o-220param99+7 | |
TRANSISTOR BIPOLAR 400V 20A
Abstract: C-150 IRFI840G IRGIB10B60KD1
|
Original |
pd-94576airgib10b60kd1o-220irfi840g+2 | |
C-150Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
pd-95321irgib6b60kdpbfo-220c-150 | |
C-150
Abstract: IRGIB6B60KD ANSI PD-94427D
|
Original |
pd-94427dirgib6b60kdo-220c-150+1 | |
transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
|
Original |
4599airgib15b60kd1o-220irfi840g+3 | |