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    DIODE 028 Search Results

    DIODE 028 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 028 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode BY 028

    Abstract: 631 DIODE SMD SMD Diode 631 SMD Switching diode SOD323 DIODE 33 25 SWITCHING DIODE ny smd transistor SOD-123 CMOD2004 BY 225 diode
    Contextual Info: New Product Announcement Sample Devices Reduce your board space requirements with available Ultramini upon request. TM SOD-523 Actual Size Available technologies include: Switching Diode Schottky Diode High Voltage Switching Diode Ultra Low Leakage Switching Diode


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    od-523od-123od-323-sod-523+10diode by 028631 diode smdsmd diode 631smd switching diode sod323diode 33 25switching diodeny smd transistorsod-123cmod2004by 225 diode PDF

    laser rise time

    Abstract: APP2934 MAX3701 note application laser diode laser circuit diagram HFDN-28 violet laser diode laser diode schematic HFDN-02
    Contextual Info: Maxim > App Notes > FIBER-OPTIC CIRCUITS Keywords: MAX3701, blue laser diode, violet laser diode, blue violet laser diode, optical measurements, blue laser driver Dec 15, 2003 APPLICATION NOTE 2934 MAX3701: Interfacing the MAX3701 to a Blue/Violet Laser Diode


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    max3701hfdn-028com/an2934an2934+8app2934laser rise timenote application laser diodelaser circuit diagramhfdn-28violet laser diodelaser diode schematichfdn-02 PDF

    hc4-dc12v

    Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
    Contextual Info: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,


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    25y-3n25y-3s25-3x1071-a+1325-3s25-3ta25-m3hc4-dc12vhc4-dc24vhc2-dc24vhc2-ss-khc3-dc24vhc3-dc6v-d-fnichifuhc4-dc24v-dhc1-dc12vhc2-l-dc24v-d-f PDF

    Contextual Info: Surface Mount Bidirectional TVS Resistors Diode Array Make Possible Surface Mount Bidirectional N006LF Series TVS Diode Array Surface Mount Bidirectional idirectional protection for up to 4 lines data lines TVS Diode Array ow operating and clamping QDN006LF


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    n006lfqdn006lf PDF

    melf diode color

    Abstract: glass mini melf diode MELF DIODE color bands LL4148 r20V LL4148 diode galaxy electrical
    Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode


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    ll41481111reverse500mwmelf diode color+4glass mini melf diodemelf diode color bandsr20vll4148 diode galaxy electrical PDF

    LL4148 diode galaxy electrical

    Abstract: MELF DIODE color bands LL4148 LL4148 melf
    Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode


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    ll41481111reverse500mwll4148 diode galaxy electrical+2melf diode color bandsll4148 melf PDF

    diode A157

    Abstract: BAT86
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAT86 DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    bat86do-34c-120bat86rev100506e+1diode a157 PDF

    LL4148

    Abstract: DIODE LL4148
    Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case


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    ll41481111reverse500mwdiode ll4148 PDF

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAT86 DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    bat86do-34c-120bat86rev100506e PDF

    LL4448

    Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case


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    ll44481111reverse500mw PDF

    Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case


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    ll44481111reverse500mw PDF

    Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case


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    ll41481111reverse500mwave268010 PDF

    diode in 5401

    Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
    Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages


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    tied87tied88x10-3poss75042+6sj4iil230jl31102090l19odiode in 5401for apd bias high-voltage104 ceramic disc capacitors 100v PDF

    RS-432

    Abstract: RS432 rs 432
    Contextual Info: urface Mount Bidirectional Surface Mount Bidirectional VS Diode Array TVS Diode Array Surface Mount Bidirectional •TVS Diode Array QDN006LF Series 006LF Series Bidirectional protection for up to 4 lines data lines rectional protection for up to 4 lines data lines


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    qdn006lf006lfrs-432rs432+1rs 432 PDF

    Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    pd-95321irgib6b60kdpbfo-220 PDF

    C-150

    Abstract: IRGIB6B60KD
    Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    pd-94427dirgib6b60kdo-220c-150 PDF

    transistor c 2335

    Abstract: C-150 IRFI840G IRGIB15B60KD1
    Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    irgib15b60kd1o-220irfi840gtransistor c 2335+1c-150 PDF

    Contextual Info: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    pd-94427airgib6b60kdo-220irfi840g PDF

    transistor BR 9013

    Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
    Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    4599airgib15b60kd1o-220irfi840g+3transistor br 9013c-150transistor c 2335 PDF

    diode 10a 400v

    Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
    Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    pd-94576airgib10b60kd1o-220param99+7irfi840gdiode 10a 400v10a 400v bipolar transistortransistor irf 630ultrafast diode 10a 400vultrafast swiching transistorc-150 PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: C-150 IRFI840G IRGIB10B60KD1
    Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    pd-94576airgib10b60kd1o-220irfi840g+2transistor bipolar 400v 20ac-150 PDF

    C-150

    Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    pd-95321irgib6b60kdpbfo-220c-150 PDF

    C-150

    Abstract: IRGIB6B60KD ANSI PD-94427D
    Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    pd-94427dirgib6b60kdo-220c-150+1ansi PDF

    transistor BR 9013

    Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
    Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    4599airgib15b60kd1o-220irfi840g+3transistor br 9013c-150swiching 30a current source PDF