DIODE 0.6 VDC Search Results

FP6740

Abstract: CDRH4D18 SLF7045 MARKING TR SOT23-6 P MOSFET sot-23-6 led driver Marking Information FP6740-1 320 sot236 sot-23-6 led driver
Contextual Info: FP6740 fitipower integrated technology lnc. Diode Embedded Step-up Converter for White LED Driver Description Features The FP6740 is a step-up current mode PWM DC/DC converter with an internal diode and 0.6Ω power N-channel MOSFET. It can support 2 to 4 white LEDs

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

ABB Semiconductors

Abstract: RCD snubber
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

RCD snubber

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V Fast Recovery Diode 5SDF 10H6004 mΩ V Doc. No. 5SYA 1109-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters

abb gto characteristic

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters

Abb diode 6000 A

Contextual Info: Key Parameters VRRM = 6000 IFAVM = 1100 IFRMS = 1700 IFSM = 18 VF0 = 1.50 rF = 0.6 VDClink = 3800 V A A kA V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA 1109-02 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses

DS0545

Abstract: BCD Semiconductor
Contextual Info: MODEL NUMBER DS0545 FEATURES • 10 - 500 MHz • 8 mA, +15 VDC • 0.6 dB Insertion Loss • CMOS Driver with BCD PIN Diode SP4T • Non-Reflective • Small 14 Pin DIP • Low Cost SP4T DAICO 138 Industries 310.507.3242 • FAX 310.507.5701 • www.daico.com

DAM1A43

Abstract: DAM1A33 DAM1A10 DAM1A11 DAM1A12 DAM1A13 DAM1A15 DAM1A16 DAM1A18 DAM1A20
Contextual Info: SURGE SUPPRESSOR DIODE DAM1A OUTLINE DRAWING 5 0.2 φ 0.6 (0.024) 27CA 27MIN. (1.06) 59MIN. (2.32) 27MIN. (1.06) Direction of polarity Cathode band (Red) Unit in mm(inch) Type mark (Red) • High transient reverse power capability suitable for protecting automobile electronic

DAM1A33

Abstract: DAM1A10 DAM1A11 DAM1A12 DAM1A13 DAM1A15 DAM1A16 DAM1A18 DAM1A20 DAM1A22
Contextual Info: SURGE SUPPRESSOR DIODE DAM1A OUTLINE DRAWING 5 0.2 φ 0.6 (0.024) 27CA 27MIN. (1.06) 59MIN. (2.32) 27MIN. (1.06) Direction of polarity Cathode band (Red) Unit in mm(inch) Type mark (Red) • High transient reverse power capability suitable for protecting automobile electronic

Contextual Info: LMH6525, LMH6526 www.ti.com SNOSAF1A – JUNE 2005 – REVISED JUNE 2005 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Check for Samples: LMH6525, LMH6526 FEATURES 1 • Fast switching: Rise and fall times: 0.6/1.0 ns. • Low Voltage Differential Signaling LVDS

Contextual Info: MODEL NUMBER DS0545 FEATURES • 10 - 500 MHz • 8 mA, +15 VDC • 0.6 dB Insertion Loss • CMOS Driver with BCD PIN Diode SP4T • Non-Reflective • Small 14 Pin DIP • Low Cost SP4T D A I CO 138 Industries 310.507.3242 • FAX 310.507.5701 • w w w.d aico .co m

L6526SP

Abstract: mos 6526 846E-3 L6525SP
Contextual Info: LMH6525, LMH6526 www.ti.com SNOSAF1B – JUNE 2005 – REVISED MARCH 2013 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Check for Samples: LMH6525, LMH6526 FEATURES 1 • 23 • • • • • • • • • Fast Switching: Rise and Fall Times: 0.6/1.0

Contextual Info: LMH6525, LMH6526 www.ti.com SNOSAF1B – JUNE 2005 – REVISED MARCH 2013 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Check for Samples: LMH6525, LMH6526 FEATURES 1 • 23 • • • • • • • • • Fast Switching: Rise and Fall Times: 0.6/1.0

DS0506

Contextual Info: FEATURES MODEL NO. DS0506 & • 100-600 MHz ■ 0.6 dB Insertion Loss ■ Handles +25 dBm ■ 250 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ 38 Pin DIP PIN Diode SP6T CONT1 I ” 0“ i SP6T CONT 2 i " 0" + 5V -5V .X X = .02 •XXX = .010 s s

Contextual Info: FEATURES • 10-500 MHz ■ 8 mA,+15VDC & ■ 0.6 dB Insertion Loss ■ CMOS Driver with BCD ■ ■ Non-Reflective Small 14 Pin DIP ■ Low Cost MODEL NO. DS0545 PIN Diode SP4T SP4T .79 — . .22 r PART ID E N T IF IC A T IO N .20 T LO G IC T A B LE CO NTROL

DS0545

Abstract: 10-RF
Contextual Info: FEATURES MODEL NO. DS0545 • 1 0 -5 0 0 MHz d r ■ 8 m A,+15VDC ■ 0.6 dB Insertion Loss PIN Diode SP4T ■ CMOS Driver with BCD ■ Non-Reflective ■ Small 14 Pin DIP ■ Low Cost 11 1 r IM III .20 .22 — PART ID EN TIFIC A TIO N LOGIC TABLE CONTROL

WN diode

Contextual Info: FEA TU R ES m • 1 0 0 -6 0 0 MHz ■ 0.6 dB Insertion Loss ■ Handles +25 dBm MODEL NO. Dsosoejj WN Diode SP6T ■ 250 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ 38 Pin DIP 2 6 14 3 CONT1 ^ " CONT2 ■■All 1 5 7 8 9 11 12 13 15 19 GND

M1 zener DIODE

Abstract: 1A15 DAM1A10 DAM1A11 DAM1A12 DAM1A13 DAM1A15 DAM1A16 DAM1A18 DAM1A20
Contextual Info: SURGE SUPPRESSOR DIODE DAM1A OUTLINE DRAWING 長 27CA 27MIN. 1.06 59MIN. (2.32) • 大きな逆方向損失が許容できます。 （自動車電装品の保護用等） • 拡散接合形レジンモールド構造 φ 0.6 (0.024) Cathode band (Red)

Contextual Info: FEATU RES ÏH MODELNO. mJM 'm\~. • 1 0 0 - 6 0 0 MHz ■ 0.6 dB Insertion Loss ■ Handles +25 dBm PIN Diode ■ 250 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ 38 Pin DIP PART ID E N T IF IC A T IO N 2.00 M A X L .018 O IA L E A D 2 6 CONT1 I

IGCT thyristor ABB

Abstract: igct abb gct thyristor HFBR-1528 HFBR-2528 IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 2200 18.8 1.65 0.6 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4503 mΩ Ω V Doc. No. 5SYA1230-01 Feb. 02 • Direct fiber optic controll and status • Fast response tdon < 3 µs, tdoff < 6 µs

igct abb

Abstract: IGCT thyristor ABB gct thyristor IGCT HFBR-2528 IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 mΩ Ω V Doc. No. 5SYA1227-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

IGCT thyristor ABB

Abstract: 5SHX 14H4502
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 mΩ Ω V Doc. No. 5SYA1227-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

IGCT thyristor ABB

Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs