DIODE 0 DB Search Results

Contextual Info: SONY C O R P / C O M P O N E N T PR O D S A3fl2303 0 0 0 2 ^ 1 0 S MTE D SLD201U-3/V-3 SONY. 50mW High Power Laser Diode r - h i - 5 - Description SLD201 U -3/V-3 is a gain-guided highpow er laser diode fabricated by MOCVD. Features . Low noise S /N = 8 0 dB Typ. at 5 mW.

Contextual Info: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is­

FAH DIODE

Abstract: FAH diode 28
Contextual Info: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The

laser diode chip

Abstract: nec 2222 NDL5850D DIODE CHIP
Contextual Info: N E C ELECTRONI CS I NC fc.EE D • b4 5 7 S2 S 0 0 3 0 0 4 3 b5b H N E C E DATA SHEET NEC LASER DIODE NDL5850D ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .4 Gb/s DESCRIPTION NDL5850D is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed

laser printer high voltage diagram

Contextual Info: _ SLD201U/V SONY. 20mW High Power Laser Diode Description Package Outline SLD201 U /V is a gain-guided high-pow er U n it: mm SLD201U laser diode fabricated by MOCVD. Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero laser diode.

9315b

Abstract: SLD201V SLD201V3
Contextual Info: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.

Contextual Info: DATA SHEET PHOTO DIODE NDL5481P Series 1 300 nm OPTICAL ANALOG CATV SYSTEM 080 /¿m InGaAs PIN PHOTO DIODE MODULE WITH SMF DESCRIPTION N D L5481P Series are InGaAs PIN photo diode modules with singlemode fiber. They are designed for analog transmission systems like CATV applications, and feature low intermodulation distortion and 4 0 dB minimum of

Contextual Info: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS REFLECTIVE SP4T DIODE SWITCH MODEL SWM-14 0 0 0.5-18.0 GHz GENERAL INFORMATION The Model S W M -1 400 S P 4 T PIN Diode switch operates over the full fre­ quency range 0.5-18-0 G H z in a single unit. KDI/Triangle has integrated

swg copper wire 25 32

Abstract: Scans-001779 CV2341 R644 noise diode marconi company marconi
Contextual Info: C O A X IA L NO ISE DIODE CV2341 T U N G ST EN FILAMENT ISSUE 2 A coaxial noise diode of 7 0 0 characteristic impedance suitable for use at frequencies up to 2500Mc/s with correction as specified and at currents up to 200 mA. FILA M EN T *Vf range 0 —4-7

Contextual Info: b2E D • bM27SES 0037»n 0 ID^ WNECE_ N E C ELECTRONICS INC SER DIODE MODULE / N D L 5 7 0 7 P 1 3 0 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH LASER DIODE MODULE D E SC RIPTIO N N D L5707P is a 1 300 nm laser diode DIP m odule w ith m u ltim o d e fib e r and internal therm o-electric cooler. It is designed fo r a

Contextual Info: SONY C O R P / C O M P O N E N T PR OD S 4TE ]> 0 3 0 5 3 0 3 O G O S T I S □ • SONY SLD202U/V S O N Y . 25mW High Power Laser Diode Description T~ H I - oS" Package Outline S L 0 2 0 2 U /V is a gain-guided h igh -pow er laser diode fabricated by MOCVD.

Contextual Info: SKN 135F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5 

diode 744

Contextual Info: SKN 136F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5 

chn 702

Abstract: chn 090 LMSW43LA-215 VC-2R diode fr 207
Contextual Info: Microwave Modules RF Diode Switches RF Diode SW with Integrated LPF 1.8+0 2 0 . 7 t0 2 r o l 2 (3) U U U - □ n r \ M a n ufa ctu re r's N am e Code (1 ) : R x (2)(4)(8) . GN D (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2 i r a 0 351:0.2 1 .2 7 *0 1 LMSW43LA-215

d1111

Abstract: DS0519
Contextual Info: FEATURES MODEL N P • 2 0 - 7 0 0 MHz ■ 0.5 dB Insertion Loss D S0519 & ■ TTL Driver PIN Diode DPDT ■ Small TO-8 Package ■ Low Cost ■ Cascadable Building Block For Attenuators And Phase Shifters TEST CONFIGURATION Y•01nf EXTERNAL BLOCKING CAPACITORS REQUIRED

73b diode

Abstract: mb-2d 100C1757 DA0617 DA0717
Contextual Info: FEATURES MODEL NO. DA0617 • 3 0 -2 0 0 MHz & ■ 25 nSec Switching Speed ■ 0.5 dB LSB, 63.5 dB Range & Schottky Diode 7 Section Attenuator ■ TTL Control ■ See DA0717 For Surface Mount Version 7 BIT ■ See 100C1757 For Connectorized Version 38 tm 1

100C1032

Abstract: BNC T connectors INSERTION LOSS 100C10
Contextual Info: F E AT U R E S MODEL NO. 100C10 3 2 1 0 0 - 14 0 0 MHz 0.5 dB Insertion Loss 20 Watts CW TTL Driver SMA, BNC or TNC Connectors SP2T Medium Power PIN Diode SP2T 1.00±.03 2.75±.03 PART IDENTIFICATION 2.250 . 25 .50 J1 J3 J2 1.75 .06 . 25 J3 +5V CONT 1.250

v1h diode

Abstract: 10S4 DA0879
Contextual Info: FEA TU RES • 0.9 dB Insertion Loss & ■ Constant Phase PIN Diode 1 Section Attenuator ■ 8 0 0 -1 2 0 0 MHz ■ 50 dB Attenuator MODEL NO. DA0879 ■ TTL Control 1 BIT ■ Small 8 Pin 0.5 Sq. Package O OUT/IN RF IN/OUT o 7 CONT "1" 8 +12V 5 TYPICAL PERFORMANCE

DCH3

Contextual Info: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS SPST DIODE SWITCH REFLECTIVE MODEL SWM-1100 0.5-18.0 GHz GENERAL INFORMATION The Model S W M -1100 S P S T PIN Diode switch operates over the full frequency range 0 .5 -1 8 .0 Ghz in a single unit. KDI/Triangle has inte­

AT-15

Abstract: DS0432
Contextual Info: FEATURES SP2T • 2 0 0 -9 0 0 MHz ■ 2 Watts CW ■ 0.3 dB Insertion Loss ■ Non-Reflective ■ TTL Driver ■ 14 Pin DIP & 2 Watt PIN Diode SP2T RF1 NC 1 GND 2 GND .X X .X X X “ I 5 j GND "0" CONT 4 +5V 3 -15V 5 RF INPUT GND GND GND 6 RF2 (NO) 7 GND

GE monitor

Abstract: NEC PM
Contextual Info: N E C ELECTRONICS INC bEE D • bM2752S 0 0 3 7 ^ 4 bEl M N E C E PRELIMINARY DATA SHEET N EC LASER DIODE MODULE NDL5723P ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIO NS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5723P is a 1 550 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed fo r a

3N172

Abstract: 3N173
Contextual Info: 3N 172, 3N173 Diode Protected P-Channel Enhancement Mode MOS FET FEATURES • High Inp ut Impedance • Diode Protected Gate PIN DEVICE MAXIMUM RATINGS @ 25° C am bient unless noted 3N 172 3 N 1 Ï3 Gate to-Source Voltage -4 0 V -3 0 V V dss Drain to Source Voltage

Contextual Info: FEATURES MODEL NO. DA0035 • 2 0 - 3 0 0 MHz ■ 20 dB Linear Range Typical & ■ ± 0.8 dB Linearity PIN Diode Linear VCA ■ +44 dBm 3rd Order Intercept ■ 0.8 dB Insertion Loss ■ 14 Pin DIP ■ See 100C 0911 For Connectorized Version RF OUT/IN RF GND

100C0912

Abstract: DA0098 DA0998 RF80
Contextual Info: FEA TU RES & • 2 0 - 3 0 0 MHz ■ 40 dB Linear Range Typical ■ ± 2 dB Linearity MODEL NO. DA0098 •if PIN Diode Linear VCA ■ 2 dB Insertion Loss ■ 14 Pin DIP ■ See DA0998 For Flat Pack Version VCA ■ See 100C0912 For Connectorized Version RF