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    diode marking e26 Datasheets

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    BD18333EUV-M ROHM Semiconductor 24CH Linear LED Driver Embedded Automotive Lamps LED Driver Visit ROHM Semiconductor
    BD18353EFV-M ROHM Semiconductor 1ch High Current LED Controller for Automotive Visit ROHM Semiconductor
    BD18362EFV-M ROHM Semiconductor Automotive Dynamic Indicator Lamps 8ch Matrix LED Controller Visit ROHM Semiconductor
    BD8389FV-M ROHM Semiconductor 12ch LED Driver IC for Automotive with 3-line Serial Interface Visit ROHM Semiconductor
    BD18347AEFV-M ROHM Semiconductor For Automotive, 40V 150mA 4ch Constant Current LED Driver Visit ROHM Semiconductor
    BD18347EFV-M ROHM Semiconductor For Automotive, 40V 150mA 4ch Constant Current LED Driver Visit ROHM Semiconductor

    diode marking e26 Datasheets Context Search

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    MBD2057-C18

    Abstract: No abstract text available
    Text: -1057-H20 100 200 2.5 420 135 0.50 7.0 1000 180 MBD-1057- E26 100 200 2.5 , 130 750 130 130 MBD-2057-H20 200 300 2.5 410 130 0.50 7.0 MBD-2057- E26 , 400 2.5 400 125 0.55 7.0 500 80 MBD-3057- E26 300 400 2.5 400 , 400 120 0.60 6.5 275 65 275 65 MBD-4057- E26 400 500 2.5 400 120 , 6.5 250 60 MBD-5057- E26 500 600 2.5 400 110 0.55 6.5 250 60 Ir


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    PDF MIL-STD-19500 MBD2057-C18

    MBD3057-C18

    Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
    Text: -1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057- E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057- E26 MBD-3057-C18 MBD-3057-T80 MBD-3057-T54 MBD-3057-H20 MBD-3057- E26 MBD-4057-C18 MBD-4057-T80 MBD-4057-T54 MBD-4057-H20 MBD-4057- E26 MBD-5057-C18 MBD-5057-T80 MBD-5057-T54 MBD-5057-H20 MBD-5057- E26 Test , 15 - 10 -5 0 5 10 POWER IN (dBm) DIODE EQ UIVALENT CIRCUIT 10 GHz RF DETECTOR TEST CIRCUIT 50Q MICROSTRIP TEST FIXTURE RF INPUT RETURN ^ C 0 , L £ 30 MHz BACK DIODE


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    PDF MIL-STD-19500 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD3057-C18 MBD2057-C18 DIODE e26 back Tunnel diode MBD1057

    MBD3057-C18

    Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
    Text: -1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057- E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057- E26 MBD-3057-C18 MBD-3057-T80 MBD-3057-T54 MBD-3057-H20 MBD-3057- E26 MBD-4057-C18 MBD-4057-T80 MBD-4057-T54 MBD-4057-H20 MBD-4057- E26 MBD-5057-C18 MBD-5057-T80 MBD-5057-T54 MBD-5057-H20 MBD-5057- E26 , (dBm) DIODE EQUIVALENT CIRCUIT 10 GHz RF DETECTOR TEST CIRCUIT 50Q MICROSTRIP TEST FIXTURE , CT= C P+C j @ 30 MHz BACK DIODE PARAMETERS I CHIP ASSEMBLY The alloyed junction of the


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    PDF MIL-STD-195 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54temperature, MBD3057-C18 MBD5057-C18 back Tunnel diode MBD-3057-C18 MBD5057 MBD2057-C18 MBD1057

    MBD3057-C18

    Abstract: back Tunnel diode
    Text: available) MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057- E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057- E26 MBD-3057-C18 Forward Peak Ratio Reverse Voltage Current . ,. Voltage Ip (uA , 2.5 2.5 2.5 400 400 400 MTLXS012 MBD-3057-T80 MBD-3057-T54 Hi MBD-3057-H20 MBD-3057- E26 MBD-4057-C18 MBD-4057-T80 MBD-4057-T54 MBD-4057-H20 MBD-4057- E26 MBD-5057-C18 MBD-5057-T80 MBD-5057-T54 MBD-5057-H20 MBD-5057- E26 Test C ondition 2.5_400 2.5_400 2.5_400 2.5_400 2.5 2.5 400 400


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    MBD3057-C18

    Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
    Text: -1057-T54 MBD-1057-H20 MBD-1057- E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057- E26 MBD-3057-C18 MBD-3057-T80 MBD-3057-T54 MBD-3057-H20 MBD-3057- E26 MBD-4057-C18 £ » a MBD-4057-T80 MBD-4057-T54 MBD-4057-H20 MBD-4057- E26 MBD-5057-C18 MBD-5057-T80 MBD-5057-T54 MBD-5057-H20 MBD-5057- E26 Test Condition Detector , IN (dBm) DIODE EQUIVALENT CIRCUIT 10 GHz RF DETECTOR TEST CIRCUIT 50Q M ICROSTRIP TEST FIXTURE , 30 MHz BACK DIODE PARAMETERS CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel


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    MSS-40 schottky diode

    Abstract: 448-E45 RS+30+12VDC+BL/m38 schottky metelics FSCM 59365
    Text: Schottky for very tight matching MSS-40,000 Series Medium Barrier Schottky Diode Applications · Mixers: single diode , image reject, image enhancement, ring quad · Doublers · Modulators Medium Barrier , -40.045-P86 MSS-40,048-C 15 MSS-40.048-P55 MSS-40.048-P86 MSS-40,1 4 1-BIO MSS-40,141- E26 MSS-40,141-H 20 MSS-40,14 8 -B 10 MSS-40,148- E26 MSS-40,148-H20 MSS-40,155-B10 MSS-40,155- E26 MSS-40,155-H20 MSS-40,244 , N-type mixer diode is well-suited for applications where - 3 dBm to + 6 dBm per diode is available. The


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    PDF MSS-40 045-CI 045-P55 045-P86 048-C MSS-40 schottky diode 448-E45 RS+30+12VDC+BL/m38 schottky metelics FSCM 59365

    Not Available

    Abstract: No abstract text available
    Text: Medium Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 5fi • Low NF • Mixers: single diode , image reject, image enhancement, ring quad • Broad , 190 Chip-P55 MSS-40,141- E26 MSKM-717-U2 MSS-40,141-H20 MSS-40.148-B10 MSKM , 265 MSS-40,148- E26 MSKM-716-U2 Beam Lead-E20 .40 3 7 .40 3 .30 MSS , MSS-40,148-H20 .38 3 10 .25 .25 6.5 6.5t 7 5 127 MSS-40,155- E26 MSKM


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    PDF MSS-40 045-C15 bQ513Scl

    back Tunnel diode

    Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
    Text: -1050-T54 MBD-1050-H20 MBD-1050- E26 MBD-2050-C19 MBD-2050-A20 MBD-2050-T80 MBD-2050-T54 MBD-2050-H20 MBD-2050- E26 , OUTPUT( - ; Cv 2 2 0 p f DIO DE EQUIVALENT CIRCUIT BACK DIODE PARAMETERS Rvs Rs+ Rj CT= C P+ Cj @ 30 MHz CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel (or back diode ) is


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    PDF MIL-STD-19500 -65to+ 17dBmCW MBD-1050-C19 MBD-1050-A20 MBD-1050-T80 MBD-1050-T54 MBD-1050-H20 MBD-1050-E26 MBD-205s back Tunnel diode "back diode" Germanium power DIODE tunnel MBD back diode

    448-e45

    Abstract: metelics FSCM 59365 mss60 MSS-60848-B80 244-B20
    Text: . Single Junction Beam Lead MSS60,144-BIO MSS60,144-E25 MSS60,144-H20 MSS60,148-BIO MSS60,148- E26 MSS60,148-H20 MSS60,153-B10 MSS60,153- E26 MSS60,153-H20 Series T Beam Lead MSS60,244-B20 MSS60,244-E35 MSS60,244 , .448-B41 MSS60.448-E40 MSS60,448-E45 MSS60.453-B41 MSS60.453-E40 MSS60,453-H40 8 Diode Ring Quad Beam Lead MSS60


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    PDF PuB41 MSS60 444-E45 448-B41 448-E40 448-E45 metelics FSCM 59365 MSS-60848-B80 244-B20

    metelics FSCM 59365

    Abstract: 448-E45
    Text: -E25 MSS60,1 44-H20 MSS60.I48-B10 MSS60,1 48- E26 MSS60,1 48-H20 A/ISS60,153-BIO MSS60,153- E26 MSS60,153 , .448-B41 MSS60.448-E40 MSS60,448-E45 MSS60,453-B41 MSS60.453-E40 MSS60.453-H40 8 Diode Ring Quad Beam Lead MSS60


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    PDF MSS-60 metelics FSCM 59365 448-E45

    Not Available

    Abstract: No abstract text available
    Text: .26 .10 .18 .30 MSS60,148-BIO MSS60,148- E26 MSS60,148-H20 3.5 3.5 3.5 580 580 580 , MSS60,153- E26 MSS60,153-H20 3.5 3.5 3.5 580 580 580 675 675 675 10 10 10 12 12 , 700 10 10 10 12 12 12 .25 .30 .38 .29 .35 .45 8 Diode Ring Quad Beam Lead


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    PDF bQS13SE MSS-60 MSS60 841-B80 841-E45 841-H40 846-B80

    2013 - Not Available

    Abstract: No abstract text available
    Text: 1200 V Snubber Diode Repetitive peak reverse voltage VRRM IFAV Surge forward current , 1200 V 600 786 A 1600 A Buck Diode Peak Repetitive Reverse Voltage DC forward , =80° C tp limited by Tjmax Power dissipation per Diode Th=80° C Maximum Junction , 1200 A 572 867 W 175 ° C 1000 798 V Tjmax Boost Inverse Diode Peak , Current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Th=80° C


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    PDF 70-W424NIA800SH-M800F 400V/800A

    2003 - 6002d

    Abstract: TC 610 BH 6001d ADB604 ADB608 DB600 DB602 DB610 BRDB-600-1D 606 diode
    Text: CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Voltage (Per Diode ) at 6 Amps DC Typical Junction Capacitance (Note 4) o Maximum Reverse Current at , Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 0 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 1000 NOTES (1) Case Temperature, TC, With Bridge Mounted on 4


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    PDF BRDB-600-1D ABDB-600-1D DB600 DB610 ADB604 ADB608 DB602 E124962 50mVp-p 6002d TC 610 BH 6001d ADB608 DB602 BRDB-600-1D 606 diode

    2001 - Not Available

    Abstract: No abstract text available
    Text: CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Maximum Forward Voltage (Per Diode ) at 3 Amps DC Typical Junction Capacitance (Note 4) @ TA = 25o C , 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 1000 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE NOTES NOTE 4 (1) Case Temperature, TC, With Bridge Mounted on


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    PDF BRDB-600-1C ABDB-600-1C DB602 DB600 DB610 ADB604 ADB608 E124962 50mVp-p

    2003 - ADB608

    Abstract: No abstract text available
    Text: Voltage (Per Diode ) at 6 Amps DC Typical Junction Capacitance (Note 4) o Maximum Reverse Current at , (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 0 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 1000 NOTES (1) Case Temperature, TC, With Bridge Mounted on 4"Sq. x 0.11" Thick , 10 100 Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE 3.01 06db E26 Diotec


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    PDF BRDB-600-1D ABDB-600-1D DB600 DB610 ADB604 ADB608 DB602 E124962 50mVp-p ADB608

    dual stage inverter circuits diagrams

    Abstract: CM4011AE 4007ae 4007A fet e27 4028A CD4000AE CM4007AE CM4000AE CM4001AE
    Text: approximately two times the channel width of the N-channel devices. A protective diode is used at all , plus inverter 35004C E25 CM4008AE Four-bit full adder 35Q05A E26 CM4009AE Hex buffer/converter , plus Inverter E28 401SA E Presettable Divide by 'N' Counter JL 2 ■* I -"—JAM INPUTS-1 E26


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    PDF CM4000 CD4000AE 35041D CM4104AE 35096C CM4108AE 35097E CM4511AE 35098C 4007AE dual stage inverter circuits diagrams CM4011AE 4007ae 4007A fet e27 4028A CM4007AE CM4000AE CM4001AE

    2001 - 6002C

    Abstract: Bridge diode 35 amps DB602 ABDB-600-2 adb608 adb604 DB610
    Text: Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Temperature Range Minimum Avalanche Voltage Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode ) at 3 , 140 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 1000 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE NOTES NOTE 4


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    PDF BRDB-600-1C ABDB-600-1C DB602 DB600 DB610 ADB604 ADB608 E124962 50mVp-p 6002C Bridge diode 35 amps DB602 ABDB-600-2 adb608

    2002 - ADB604

    Abstract: ADB608 DB600 DB602 DB610
    Text: Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Forward Rectified Current @ TA = 25o C (Note 3) VFM Maximum Forward Voltage (Per Diode ) at 1.5 Amps , CHARACTERISTIC PER DIODE 0 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 1000 NOTES (1) Case


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    PDF BRDB-600-1C ABDB-600-1C DB600 DB610 ADB604 ADB608 DB602 E124962 50mVp-p ADB608 DB602

    2003 - Not Available

    Abstract: No abstract text available
    Text: Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Forward Rectified Current @ TA = 25o C (Note 3) VFM Maximum Forward Voltage (Per Diode ) at 6 Amps , CHARACTERISTIC PER DIODE 0 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 1000 NOTES (1) Case


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    PDF BRDB-600-1C ABDB-600-1C DB600 DB610 ADB604 ADB608 DB602 E124962 50mVp-p

    2012 - Not Available

    Abstract: No abstract text available
    Text: Bulletin E-26 Model V10 Flotect® Mini-Size Flow Switch Specifications – Installation and Operating Instructions 4 [101.6] 2-7/8 [73.07] LOWER BODY 18 AWG LEAD WIRES 19˝ [482.6] LONG , counter with inductive component as circuit load. RC SUPPRESSION VARISTER PROTECTION DIODE SUPPRESSION 2 C INDUCTIVE LOAD DIODE INDUCTIVE LOAD INDUCTIVE LOAD R VARISTER SWITCH 10 [uf] 10*I (1+50/E) R PIV DIODE > V Capacitive Loads Possible causes – A


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    2006 - b864

    Abstract: adb608 ADB604 DB602 DB600 DB610 B-864 aa7 diode 6002d
    Text: CAPACITANCE PER DIODE É È Ç uÆ Å Ä Ã Å E26 Diotec , Junction Capacitance (Note 4) Maximum Forward Voltage (Per Diode ) at 6 Amps DC See Note 5 Junction , ) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE


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    PDF 50mVp-p b864 adb608 ADB604 DB602 DB600 DB610 B-864 aa7 diode 6002d

    2004 - Not Available

    Abstract: No abstract text available
    Text: ) E11 (ON2) E26 (DCLA) Jumpers JP1 (CLS): Current limit selection: Use 1.5X position to have , , D8, D10 D5, D12 D7, D9 D13 E3-E8, E11, E17-E23, E26 E1, E13-E16, E24, E25, E27-E33 JP1 JP2 J1 , DIODE ZENER, 1.8V 500mW, 5%, SOD123 LED, GREEN DIODE , FAST SWITCHING, SOD523 DIODE ZENER, 1.8V 500mW, 5%, SOD123 LED, RED, 0603 DIODE ZENER, 1.8V 500mW, 5%, SOD123 TP, TURRET, 0.064" TP, TURRET , DIODE , SMC-DIODE DIODE , TRANSIENT VOLTAGE SUPPRESSOR, POWEREDi123 SHUNT, 2mm IC LTC4226CUD


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    PDF DC1627A LTC4226 DC1627A LTC4226 dc1627af

    2004 - FLD5F14CN-E

    Abstract: FLD5F14CN-E59 TL E28 dfb laser
    Text: of over 10,000ps/nm in 2.5 Gb/s systems · Modulator Integrated DFB Laser Diode Module · CW , Modulator Reverse Voltage Vm Vear Monitor Diode Reverse Voltage Vmonr - - 20 mA Monitor Diode Forward Current Imon - - 1 V Cooling Heating Cooling Heating -2.5 , DFB Laser FLD5F14CN-E MONITOR DIODE CHARACTERISTICS (TL= Tset, Tc = 25°C, BOL, unless otherwise , Condition Monitor Current Im Monitor Dark Current Monitor Diode Capacitance Unit TEC AND


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    PDF 550nm FLD5F14CN-E 000ps/nm 14-pin 000ps/nm Integra4888 FLD5F14CN-E FLD5F14CN-E59 TL E28 dfb laser

    1996 - takamisawa ny24w-k

    Abstract: aeg protection relay NY-24W-K Takamisawa NY supi 3 interbus phoenix contacts 30 03 34 7 ibs STME PLC A250 AEG supi interbus BOSCH CL-300
    Text: Other versions are available on request. Most contactor manufacturers now offer diode , RC or varistor , Data Additional release delay Wiring the load Diode Definite induced voltage threshold , Disadvantages: - attenuation only possible via load resistance - long release delay Series circuit diode /Zener diode Advantages: - easy dimensioning + medium to short Load yes (UZD ) no UZD Suppressor diode + (~) (~) medium to short yes (UZD) UZD Load yes Disadvantages: -


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    PDF 16R/S 80-pos. 80-DIK takamisawa ny24w-k aeg protection relay NY-24W-K Takamisawa NY supi 3 interbus phoenix contacts 30 03 34 7 ibs STME PLC A250 AEG supi interbus BOSCH CL-300

    DIODE 240v 3a

    Abstract: u906 RR2P-U RU coil DC 12v Idec rr2ba-u RH2L transistor 05c SCR 0.5A 500V BNDN1000 RU4S-A110
    Text: RY2L Series E-26 E-29 E-32 Appearance Page Contact Configuration E-23 2 Form C 2 , indicator · Manual latching lever with color coding for AC or DC coil · Snap-on marking plate · , 1. RR1BA, RR2BA, and RR3PA are U.S. standard terminal arrangements. 2. For diode option on DC coils


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    PDF 800-262-IDEC. SR3B-02: SR3B-51: 262-IDEC 317-IDEC DIODE 240v 3a u906 RR2P-U RU coil DC 12v Idec rr2ba-u RH2L transistor 05c SCR 0.5A 500V BNDN1000 RU4S-A110
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