MBD2057-C18
Abstract: No abstract text available
Text: -1057-H20 100 200 2.5 420 135 0.50 7.0 1000 180 MBD-1057- E26 100 200 2.5 , 130 750 130 130 MBD-2057-H20 200 300 2.5 410 130 0.50 7.0 MBD-2057- E26 , 400 2.5 400 125 0.55 7.0 500 80 MBD-3057- E26 300 400 2.5 400 , 400 120 0.60 6.5 275 65 275 65 MBD-4057- E26 400 500 2.5 400 120 , 6.5 250 60 MBD-5057- E26 500 600 2.5 400 110 0.55 6.5 250 60 Ir
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MIL-STD-19500
MBD2057-C18
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MBD3057-C18
Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
Text: -1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057- E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057- E26 MBD-3057-C18 MBD-3057-T80 MBD-3057-T54 MBD-3057-H20 MBD-3057- E26 MBD-4057-C18 MBD-4057-T80 MBD-4057-T54 MBD-4057-H20 MBD-4057- E26 MBD-5057-C18 MBD-5057-T80 MBD-5057-T54 MBD-5057-H20 MBD-5057- E26 Test , 15 - 10 -5 0 5 10 POWER IN (dBm) DIODE EQ UIVALENT CIRCUIT 10 GHz RF DETECTOR TEST CIRCUIT 50Q MICROSTRIP TEST FIXTURE RF INPUT RETURN ^ C 0 , L £ 30 MHz BACK DIODE
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MIL-STD-19500
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54
MBD-2057-H20
MBD3057-C18
MBD2057-C18
DIODE e26
back Tunnel diode
MBD1057
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MBD3057-C18
Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Text: -1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057- E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057- E26 MBD-3057-C18 MBD-3057-T80 MBD-3057-T54 MBD-3057-H20 MBD-3057- E26 MBD-4057-C18 MBD-4057-T80 MBD-4057-T54 MBD-4057-H20 MBD-4057- E26 MBD-5057-C18 MBD-5057-T80 MBD-5057-T54 MBD-5057-H20 MBD-5057- E26 , (dBm) DIODE EQUIVALENT CIRCUIT 10 GHz RF DETECTOR TEST CIRCUIT 50Q MICROSTRIP TEST FIXTURE , CT= C P+C j @ 30 MHz BACK DIODE PARAMETERS I CHIP ASSEMBLY The alloyed junction of the
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MIL-STD-195
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54temperature,
MBD3057-C18
MBD5057-C18
back Tunnel diode
MBD-3057-C18
MBD5057
MBD2057-C18
MBD1057
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MBD3057-C18
Abstract: back Tunnel diode
Text: available) MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057- E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057- E26 MBD-3057-C18 Forward Peak Ratio Reverse Voltage Current . ,. Voltage Ip (uA , 2.5 2.5 2.5 400 400 400 MTLXS012 MBD-3057-T80 MBD-3057-T54 Hi MBD-3057-H20 MBD-3057- E26 MBD-4057-C18 MBD-4057-T80 MBD-4057-T54 MBD-4057-H20 MBD-4057- E26 MBD-5057-C18 MBD-5057-T80 MBD-5057-T54 MBD-5057-H20 MBD-5057- E26 Test C ondition 2.5_400 2.5_400 2.5_400 2.5_400 2.5 2.5 400 400
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MBD3057-C18
Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Text: -1057-T54 MBD-1057-H20 MBD-1057- E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD-2057- E26 MBD-3057-C18 MBD-3057-T80 MBD-3057-T54 MBD-3057-H20 MBD-3057- E26 MBD-4057-C18 £ » a MBD-4057-T80 MBD-4057-T54 MBD-4057-H20 MBD-4057- E26 MBD-5057-C18 MBD-5057-T80 MBD-5057-T54 MBD-5057-H20 MBD-5057- E26 Test Condition Detector , IN (dBm) DIODE EQUIVALENT CIRCUIT 10 GHz RF DETECTOR TEST CIRCUIT 50Q M ICROSTRIP TEST FIXTURE , 30 MHz BACK DIODE PARAMETERS CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel
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MSS-40 schottky diode
Abstract: 448-E45 RS+30+12VDC+BL/m38 schottky metelics FSCM 59365
Text: Schottky for very tight matching MSS-40,000 Series Medium Barrier Schottky Diode Applications · Mixers: single diode , image reject, image enhancement, ring quad · Doublers · Modulators Medium Barrier , -40.045-P86 MSS-40,048-C 15 MSS-40.048-P55 MSS-40.048-P86 MSS-40,1 4 1-BIO MSS-40,141- E26 MSS-40,141-H 20 MSS-40,14 8 -B 10 MSS-40,148- E26 MSS-40,148-H20 MSS-40,155-B10 MSS-40,155- E26 MSS-40,155-H20 MSS-40,244 , N-type mixer diode is well-suited for applications where - 3 dBm to + 6 dBm per diode is available. The
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MSS-40
045-CI
045-P55
045-P86
048-C
MSS-40 schottky diode
448-E45
RS+30+12VDC+BL/m38 schottky
metelics FSCM 59365
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Not Available
Abstract: No abstract text available
Text: Medium Barrier Schottky Diode metelics CORPORATION Features Applications ⢠Low Rs â 5fi ⢠Low NF ⢠Mixers: single diode , image reject, image enhancement, ring quad ⢠Broad , 190 Chip-P55 MSS-40,141- E26 MSKM-717-U2 MSS-40,141-H20 MSS-40.148-B10 MSKM , 265 MSS-40,148- E26 MSKM-716-U2 Beam Lead-E20 .40 3 7 .40 3 .30 MSS , MSS-40,148-H20 .38 3 10 .25 .25 6.5 6.5t 7 5 127 MSS-40,155- E26 MSKM
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MSS-40
045-C15
bQ513Scl
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back Tunnel diode
Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Text: -1050-T54 MBD-1050-H20 MBD-1050- E26 MBD-2050-C19 MBD-2050-A20 MBD-2050-T80 MBD-2050-T54 MBD-2050-H20 MBD-2050- E26 , OUTPUT( - ; Cv 2 2 0 p f DIO DE EQUIVALENT CIRCUIT BACK DIODE PARAMETERS Rvs Rs+ Rj CT= C P+ Cj @ 30 MHz CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel (or back diode ) is
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MIL-STD-19500
-65to+
17dBmCW
MBD-1050-C19
MBD-1050-A20
MBD-1050-T80
MBD-1050-T54
MBD-1050-H20
MBD-1050-E26
MBD-205s
back Tunnel diode
"back diode"
Germanium power
DIODE tunnel MBD
back diode
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448-e45
Abstract: metelics FSCM 59365 mss60 MSS-60848-B80 244-B20
Text: . Single Junction Beam Lead MSS60,144-BIO MSS60,144-E25 MSS60,144-H20 MSS60,148-BIO MSS60,148- E26 MSS60,148-H20 MSS60,153-B10 MSS60,153- E26 MSS60,153-H20 Series T Beam Lead MSS60,244-B20 MSS60,244-E35 MSS60,244 , .448-B41 MSS60.448-E40 MSS60,448-E45 MSS60.453-B41 MSS60.453-E40 MSS60,453-H40 8 Diode Ring Quad Beam Lead MSS60
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PuB41
MSS60
444-E45
448-B41
448-E40
448-E45
metelics FSCM 59365
MSS-60848-B80
244-B20
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metelics FSCM 59365
Abstract: 448-E45
Text: -E25 MSS60,1 44-H20 MSS60.I48-B10 MSS60,1 48- E26 MSS60,1 48-H20 A/ISS60,153-BIO MSS60,153- E26 MSS60,153 , .448-B41 MSS60.448-E40 MSS60,448-E45 MSS60,453-B41 MSS60.453-E40 MSS60.453-H40 8 Diode Ring Quad Beam Lead MSS60
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MSS-60
metelics FSCM 59365
448-E45
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Not Available
Abstract: No abstract text available
Text: .26 .10 .18 .30 MSS60,148-BIO MSS60,148- E26 MSS60,148-H20 3.5 3.5 3.5 580 580 580 , MSS60,153- E26 MSS60,153-H20 3.5 3.5 3.5 580 580 580 675 675 675 10 10 10 12 12 , 700 10 10 10 12 12 12 .25 .30 .38 .29 .35 .45 8 Diode Ring Quad Beam Lead
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bQS13SE
MSS-60
MSS60
841-B80
841-E45
841-H40
846-B80
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2013 - Not Available
Abstract: No abstract text available
Text: 1200 V Snubber Diode Repetitive peak reverse voltage VRRM IFAV Surge forward current , 1200 V 600 786 A 1600 A Buck Diode Peak Repetitive Reverse Voltage DC forward , =80° C tp limited by Tjmax Power dissipation per Diode Th=80° C Maximum Junction , 1200 A 572 867 W 175 ° C 1000 798 V Tjmax Boost Inverse Diode Peak , Current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Th=80° C
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70-W424NIA800SH-M800F
400V/800A
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2003 - 6002d
Abstract: TC 610 BH 6001d ADB604 ADB608 DB600 DB602 DB610 BRDB-600-1D 606 diode
Text: CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Voltage (Per Diode ) at 6 Amps DC Typical Junction Capacitance (Note 4) o Maximum Reverse Current at , Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 0 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 1000 NOTES (1) Case Temperature, TC, With Bridge Mounted on 4
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BRDB-600-1D
ABDB-600-1D
DB600
DB610
ADB604
ADB608
DB602
E124962
50mVp-p
6002d
TC 610 BH
6001d
ADB608
DB602
BRDB-600-1D
606 diode
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2001 - Not Available
Abstract: No abstract text available
Text: CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Maximum Forward Voltage (Per Diode ) at 3 Amps DC Typical Junction Capacitance (Note 4) @ TA = 25o C , 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 1000 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE NOTES NOTE 4 (1) Case Temperature, TC, With Bridge Mounted on
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BRDB-600-1C
ABDB-600-1C
DB602
DB600
DB610
ADB604
ADB608
E124962
50mVp-p
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2003 - ADB608
Abstract: No abstract text available
Text: Voltage (Per Diode ) at 6 Amps DC Typical Junction Capacitance (Note 4) o Maximum Reverse Current at , (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 0 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 1000 NOTES (1) Case Temperature, TC, With Bridge Mounted on 4"Sq. x 0.11" Thick , 10 100 Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE 3.01 06db E26 Diotec
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BRDB-600-1D
ABDB-600-1D
DB600
DB610
ADB604
ADB608
DB602
E124962
50mVp-p
ADB608
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dual stage inverter circuits diagrams
Abstract: CM4011AE 4007ae 4007A fet e27 4028A CD4000AE CM4007AE CM4000AE CM4001AE
Text: approximately two times the channel width of the N-channel devices. A protective diode is used at all , plus inverter 35004C E25 CM4008AE Four-bit full adder 35Q05A E26 CM4009AE Hex buffer/converter , plus Inverter E28 401SA E Presettable Divide by 'N' Counter JL 2 â * I -"âJAM INPUTS-1 E26
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CM4000
CD4000AE
35041D
CM4104AE
35096C
CM4108AE
35097E
CM4511AE
35098C
4007AE
dual stage inverter circuits diagrams
CM4011AE
4007ae
4007A
fet e27
4028A
CM4007AE
CM4000AE
CM4001AE
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2001 - 6002C
Abstract: Bridge diode 35 amps DB602 ABDB-600-2 adb608 adb604 DB610
Text: Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Temperature Range Minimum Avalanche Voltage Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode ) at 3 , 140 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 1000 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE NOTES NOTE 4
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BRDB-600-1C
ABDB-600-1C
DB602
DB600
DB610
ADB604
ADB608
E124962
50mVp-p
6002C
Bridge diode 35 amps
DB602
ABDB-600-2
adb608
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2002 - ADB604
Abstract: ADB608 DB600 DB602 DB610
Text: Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Forward Rectified Current @ TA = 25o C (Note 3) VFM Maximum Forward Voltage (Per Diode ) at 1.5 Amps , CHARACTERISTIC PER DIODE 0 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 1000 NOTES (1) Case
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BRDB-600-1C
ABDB-600-1C
DB600
DB610
ADB604
ADB608
DB602
E124962
50mVp-p
ADB608
DB602
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2003 - Not Available
Abstract: No abstract text available
Text: Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE 3.01 06db E26 Diotec , Forward Rectified Current @ TA = 25o C (Note 3) VFM Maximum Forward Voltage (Per Diode ) at 6 Amps , CHARACTERISTIC PER DIODE 0 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 1000 NOTES (1) Case
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BRDB-600-1C
ABDB-600-1C
DB600
DB610
ADB604
ADB608
DB602
E124962
50mVp-p
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2012 - Not Available
Abstract: No abstract text available
Text: Bulletin E-26 Model V10 Flotect® Mini-Size Flow Switch Specifications â Installation and Operating Instructions 4 [101.6] 2-7/8 [73.07] LOWER BODY 18 AWG LEAD WIRES 19Ë [482.6] LONG , counter with inductive component as circuit load. RC SUPPRESSION VARISTER PROTECTION DIODE SUPPRESSION 2 C INDUCTIVE LOAD DIODE INDUCTIVE LOAD INDUCTIVE LOAD R VARISTER SWITCH 10 [uf] 10*I (1+50/E) R PIV DIODE > V Capacitive Loads Possible causes â A
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2006 - b864
Abstract: adb608 ADB604 DB602 DB600 DB610 B-864 aa7 diode 6002d
Text: CAPACITANCE PER DIODE É È Ç uÆ Å Ä Ã Å E26 Diotec , Junction Capacitance (Note 4) Maximum Forward Voltage (Per Diode ) at 6 Amps DC See Note 5 Junction , ) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE
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50mVp-p
b864
adb608
ADB604
DB602
DB600
DB610
B-864
aa7 diode
6002d
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2004 - Not Available
Abstract: No abstract text available
Text: ) E11 (ON2) E26 (DCLA) Jumpers JP1 (CLS): Current limit selection: Use 1.5X position to have , , D8, D10 D5, D12 D7, D9 D13 E3-E8, E11, E17-E23, E26 E1, E13-E16, E24, E25, E27-E33 JP1 JP2 J1 , DIODE ZENER, 1.8V 500mW, 5%, SOD123 LED, GREEN DIODE , FAST SWITCHING, SOD523 DIODE ZENER, 1.8V 500mW, 5%, SOD123 LED, RED, 0603 DIODE ZENER, 1.8V 500mW, 5%, SOD123 TP, TURRET, 0.064" TP, TURRET , DIODE , SMC-DIODE DIODE , TRANSIENT VOLTAGE SUPPRESSOR, POWEREDi123 SHUNT, 2mm IC LTC4226CUD
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DC1627A
LTC4226
DC1627A
LTC4226
dc1627af
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2004 - FLD5F14CN-E
Abstract: FLD5F14CN-E59 TL E28 dfb laser
Text: of over 10,000ps/nm in 2.5 Gb/s systems · Modulator Integrated DFB Laser Diode Module · CW , Modulator Reverse Voltage Vm Vear Monitor Diode Reverse Voltage Vmonr - - 20 mA Monitor Diode Forward Current Imon - - 1 V Cooling Heating Cooling Heating -2.5 , DFB Laser FLD5F14CN-E MONITOR DIODE CHARACTERISTICS (TL= Tset, Tc = 25°C, BOL, unless otherwise , Condition Monitor Current Im Monitor Dark Current Monitor Diode Capacitance Unit TEC AND
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550nm
FLD5F14CN-E
000ps/nm
14-pin
000ps/nm
Integra4888
FLD5F14CN-E
FLD5F14CN-E59
TL E28
dfb laser
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1996 - takamisawa ny24w-k
Abstract: aeg protection relay NY-24W-K Takamisawa NY supi 3 interbus phoenix contacts 30 03 34 7 ibs STME PLC A250 AEG supi interbus BOSCH CL-300
Text: Other versions are available on request. Most contactor manufacturers now offer diode , RC or varistor , Data Additional release delay Wiring the load Diode Definite induced voltage threshold , Disadvantages: - attenuation only possible via load resistance - long release delay Series circuit diode /Zener diode Advantages: - easy dimensioning + medium to short Load yes (UZD ) no UZD Suppressor diode + (~) (~) medium to short yes (UZD) UZD Load yes Disadvantages: -
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16R/S
80-pos.
80-DIK
takamisawa ny24w-k
aeg protection relay
NY-24W-K
Takamisawa NY
supi 3 interbus
phoenix contacts 30 03 34 7
ibs STME
PLC A250 AEG
supi interbus
BOSCH CL-300
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DIODE 240v 3a
Abstract: u906 RR2P-U RU coil DC 12v Idec rr2ba-u RH2L transistor 05c SCR 0.5A 500V BNDN1000 RU4S-A110
Text: RY2L Series E-26 E-29 E-32 Appearance Page Contact Configuration E-23 2 Form C 2 , indicator · Manual latching lever with color coding for AC or DC coil · Snap-on marking plate · , 1. RR1BA, RR2BA, and RR3PA are U.S. standard terminal arrangements. 2. For diode option on DC coils
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800-262-IDEC.
SR3B-02:
SR3B-51:
262-IDEC
317-IDEC
DIODE 240v 3a
u906
RR2P-U
RU coil DC 12v
Idec rr2ba-u
RH2L
transistor 05c
SCR 0.5A 500V
BNDN1000
RU4S-A110
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