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    DIODA RECTIFIER 16 A Search Results

    DIODA RECTIFIER 16 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CRG10A
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Datasheet
    CRG09B
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Datasheet
    CRG11B
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT Datasheet
    CRG09A
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Datasheet
    CRG04A
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT Datasheet

    DIODA RECTIFIER 16 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    dioda by 238

    Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
    Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching


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    0d00s73dioda by 2381xys1xfm67n10+7hiperfetixfn50n25ixfm50n20ixfm6n90ixfh40n30ixfh10n100ixfh11n100 PDF

    DD-221

    Abstract: dioda module
    Contextual Info: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,


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    irgni0075m120d2215210onhdd-221+1dioda module PDF

    IRF612R

    Abstract: IRF610R IRF611R IRF613R
    Contextual Info: _ Rugged Power MOSFETs IRF610R, IRF611R, IRF612R, IRF613R File Number 1988 Avalanche Energy Rated N-Channel Power MOSFETs 2 .0 A an d 2.5 A , 1 5 0 V -2 0 0 V ros on = 1 .5 0 a n d 2 .4 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■


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    irf610rirf611rirf612rirf613r+250v-200vacs-421560 PDF

    IRFF420R

    Abstract: IRFF421R IRFF422R IRFF423R
    Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■


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    irff420rirff421rirff422rirff423r+250v-500v92cs-42660 PDF

    rj dioda

    Contextual Info: - I N T E R N A T I O N A L RECTIFIER IO R in t e r n a t io n a l 73 2.5 -/? DE~| 4ÖSS4SB OOObTM? 0 | ~ Data Sheet No. PD-3.149 r e c t if ie r S30DF S E R IE S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 290 AMP RMS, RING AM PLIFYING GATE INVERTER TY P E STUD MOUNTED S C R s


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    s30dft0-209ads3qof16aoo-209ae+2o-118rj dioda PDF

    MDA980-1

    Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
    Contextual Info: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer


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    mda980-1mda980-6mda990-1mda990-6+7mda990dioda bridgepj 66 diodepj 50 diodepj 56 diodedioda 30 amperedioda rectifier PDF

    mr2001s

    Abstract: dioda 30 Ampere dioda 3 ampere MR2000SR MR2000S diode rectifiers dioda ak 03 MR2002S dioda rectifier MR2006S MR2000S
    Contextual Info: MR2000S SILICON series MEDIUM-CURRENT SILICON RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS 20 AMPERE 50-1000 VOLTS DIFFUSED JUNCTION . . . compact, highly efficien t silicon rectifiers fo r medium-current applications requiring: • High C urrent Surge - 400 Amperes @


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    mr2000s2000s2001s2002s+122004s2006s2008smr2001sdioda 30 amperedioda 3 amperemr2000srmr2000s diode rectifiersdioda ak 03mr2002sdioda rectifiermr2006s PDF

    IRF341R

    Abstract: IRF343 IRF340R IRF342R IRF343R
    Contextual Info: Rugged Power MOSFETs _ IRF340R, IRF341R, IRF342R, IRF343R File N u m b e r 2005 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDS on = 0.550 and 0.80fi N -C H A N N E L E N H A N C E M E N T M O D E Features: • Single pulse avalanche energy rated


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    irf340rirf341rirf342rirf343r+392cs-426392cs-42660irf343 PDF

    tektronix type 576 curve tracer

    Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
    Contextual Info: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­


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    an915an915/dtektronix type 576 curve tracertektronix 576 curve tracer+7tracer 176mr7562n4401 diediodo 4001real time application of astable modean915 motorolaline frequency diode PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF