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    DIODA RECTIFIER 16 A Search Results

    DIODA RECTIFIER 16 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CRG11B
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT Datasheet
    CRG10A
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Datasheet
    CMG03A
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT Datasheet
    CMG06A
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 1 A , Rectifier Diode, M-FLAT Datasheet
    CRG09A
    Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Datasheet

    DIODA RECTIFIER 16 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    dioda by 238

    Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
    Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching


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    0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100 PDF

    DD-221

    Abstract: dioda module
    Contextual Info: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,


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    IRGNI0075M12 0D22152 10OnH DD-221 dioda module PDF

    IRF612R

    Abstract: IRF610R IRF611R IRF613R
    Contextual Info: _ Rugged Power MOSFETs IRF610R, IRF611R, IRF612R, IRF613R File Number 1988 Avalanche Energy Rated N-Channel Power MOSFETs 2 .0 A an d 2.5 A , 1 5 0 V -2 0 0 V ros on = 1 .5 0 a n d 2 .4 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■


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    IRF610R, IRF611R, IRF612R, IRF613R 50V-200V IRF612R IRF613R aCS-421560 IRF610R IRF611R PDF

    IRFF420R

    Abstract: IRFF421R IRFF422R IRFF423R
    Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■


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    IRFF420R, IRFF421R, IRFF422R, IRFF423R 50V-500V IRFF422R IRFF423R 92CS-42660 IRFF420R IRFF421R PDF

    rj dioda

    Contextual Info: - I N T E R N A T I O N A L RECTIFIER IO R in t e r n a t io n a l 73 2.5 -/? DE~| 4ÖSS4SB OOObTM? 0 | ~ Data Sheet No. PD-3.149 r e c t if ie r S30DF S E R IE S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 290 AMP RMS, RING AM PLIFYING GATE INVERTER TY P E STUD MOUNTED S C R s


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    S30DF T0-209AD S3QOF16AO. O-209AE O-118) rj dioda PDF

    MDA980-1

    Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
    Contextual Info: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer


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    MDA980-1 MDA980-6 MDA990-1 MDA990-6 MDA990 MDA990-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier PDF

    mr2001s

    Abstract: dioda 30 Ampere dioda 3 ampere MR2000SR MR2000S diode rectifiers dioda ak 03 MR2002S dioda rectifier MR2006S MR2000S
    Contextual Info: MR2000S SILICON series MEDIUM-CURRENT SILICON RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS 20 AMPERE 50-1000 VOLTS DIFFUSED JUNCTION . . . compact, highly efficien t silicon rectifiers fo r medium-current applications requiring: • High C urrent Surge - 400 Amperes @


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    MR2000S 2000S 2001S 2002S 2004S 2006S 2008S mr2001s dioda 30 Ampere dioda 3 ampere MR2000SR MR2000S diode rectifiers dioda ak 03 MR2002S dioda rectifier MR2006S PDF

    IRF341R

    Abstract: IRF343 IRF340R IRF342R IRF343R
    Contextual Info: Rugged Power MOSFETs _ IRF340R, IRF341R, IRF342R, IRF343R File N u m b e r 2005 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDS on = 0.550 and 0.80fi N -C H A N N E L E N H A N C E M E N T M O D E Features: • Single pulse avalanche energy rated


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    IRF340R, IRF341R, IRF342R, IRF343R IRF342R IRF343R 92CS-4263Â 92CS-42660 IRF341R IRF343 IRF340R PDF

    tektronix type 576 curve tracer

    Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
    Contextual Info: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­


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    AN915 AN915/D AN915/D tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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