DIOD 800V Search Results

16F100

Abstract: 16F120 16F20 16F40 16F60 16F80 16FR120 16FR20 16FR40 16FR80
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-147-15 16F100 diod 1000V 16A 70-147-23 16F120 diod 1200V 16A 70-147-56 16F20 diod 200V 16A 70-147-64 16F80 diod 800V 16A

25F80

Abstract: P 1000V diod 25F10 25F100 25F120 25F20 25F40 25F60 25FR10 25FR100
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-360-07 25F10 diod 25A 100V 70-360-15 25F100 diod 25A 1000V 70-360-23 25F120 diod 25A 1200V 70-360-30 25F20 diod 25A 200V

40HFR100

Abstract: 40HF120 Diode 40HF120 40HF10 40HF100 40HF160 40HF40 40HF60 40HF80 40HFR10
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-363-95 40HF10 diod 100V 40A 70-364-03 40HF100 diod 1000V 40A 70-364-11 40HF120 diod 1200V 40A 70-364-29 40HF160 diod 1600V 40A

12F10

Abstract: 12F100 12F120 12F20 12F40 12F60 12F80 12FR100 12FR120 12FR60
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-145-58 12F10 diod 100V 12A 70-145-66 12F100 diod 1000V 12A 70-145-74 12F120 diod 1200V 12A 70-145-82 12F20 diod 200V 12A

p j 85 diod

Abstract: 85HF120 85HF160 85HF20 85HF40 85HF60 85HF80 85HFR120 85HFR20 85HFR40
Contextual Info: 2002-07-05 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-366-92 85HF120 diod 1200V 85A 70-367-00 85HF160 diod 1600V 85A 70-367-18 85HF20 diod 200V 85A 70-367-26 85HF40 diod 400V 85A

70HF100

Abstract: 70HF120 70HF140 70HF160 70HF20 70HF40 70HF80 70HFR10 70HFR100 70HFR140
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-365-36 70HF100 diod 1000V 70A 70-365-44 70HF120 diod 1200V 70A 70-365-50 70HF140 diod 1400V 70A 70-365-69 70HF160 diod 1600V 70A

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Triac 12F

Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

Contextual Info: MICRO QUALITY / DIB SEM IC O N D U C TO R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery VM-X Series For Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current Glass Passivated Diodes Standard .1 0 "— 2,54M M Dip Lead Spacing

Contextual Info: M ICRO Q U A L IT Y / 1 /lD S E M IC O N D U C T O R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery, Surface Mount T \T T l For Surface Mount, Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current

Contextual Info: SSH8N80A A d vanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 uA Max @ VM = 800V Low Rq^ oh) : 1,000 £2 (Typ.)

Contextual Info: SOLID STATE DEVICES INC 35 E D CO T S S '-Z PART N UM BER PACKAGE REVERSE V O LTA G E PHOTO C URRENT C A P A C IT A N C E REVERSE C URREN T B R EAK D O W N V O LTAG E SPD15 11-1-XX SPD1511-2-XX SPD6001 SPD9441 T0-18 TO-39 TO-5 AX. LEAD 120 V 120 V 90 V 500 V

TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Contextual Info: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV

BYT261

Abstract: bty261 BYT260PI DDLQ337
Contextual Info: 7 S C S -T H O M S O N MO^s IL[i ï[iMQ gS BYT260PI(V)-800 BYT261 PI(V)-800 FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TU RN -O FF SW ITCHING INSULATED P A C K A G E : Insulating voltage = 2500 V r m s

UM7108

Abstract: M7002 UM1000 UM7108 digit um7000 UM7006 UM7001 UM7100 UM7101 UM7102
Contextual Info: UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE Features • • • • Voltage ratings to 1000V UM7000 W ide variety of packag e sty le s Rated average pow er d issip a tio n to 10W C o st effe ctive in volum e a p p lic a tio n s Description The UM 7000 and UM7100 se rie s o ffe r m od­

ROHM BP5053-12 circuit diagrams

Abstract: BP5053-12 CMF01 311VDC
Contextual Info: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C

BP5053-12

Abstract: ROHM BP5053-12 circuit diagrams TOSHIBA DIODE CATALOG TOP MARKING C1 ROHM ZNR 20 CMF01 diod 20a 600v rectifier diod 250 A ZNR Power
Contextual Info: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C

diode bridge LT 402

Abstract: Mitsubishi Electric IGBT MODULES
Contextual Info: MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor

Contextual Info: MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of tw o IGBTs in a half-bridge co nfig u ­ ration w ith each tra n s is to r having

Contextual Info: m CM100DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD H-Series Module 100 Amperes/1400 Volts D escription: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

diod m4

Abstract: diode LT 42
Contextual Info: MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a pp lica ­ tions. Each m odule consists of one IGBT in a single configuration with a reverse-connected su pe r-fa st re­

tra 103

Contextual Info: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of tw o IGBTs in a half-bridge co nfig u ­ ration w ith each tra n s is to r having a

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of tw o IGBTs in a half-bridge co nfig u ­ ration w ith each tra n s is to r having