DIOD 314 Search Results

25F80

Abstract: P 1000V diod 25F10 25F100 25F120 25F20 25F40 25F60 25FR10 25FR100
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-360-07 25F10 diod 25A 100V 70-360-15 25F100 diod 25A 1000V 70-360-23 25F120 diod 25A 1200V 70-360-30 25F20 diod 25A 200V

Optocouplers App Note

Abstract: diod zo
Contextual Info: T I L 1 18-1, T I L 1 18-2, TIL118-3 OPTOCOUPLERS D 1 6 0 7 , NOVEMBER 1 9 7 3 -R E V IS E D JULY 1 9 8 9 Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High Direct-Current Transfer Ratio High-Voltage Electrical Isolation . . . 3.5 3 kV

Contextual Info: CA3140, CA3140A h a r ® J S E M I C O N D U C T O R • M M ■ 4 .5 MHz, BiMOS Operational Amplifier November 1996 with M OSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational ampli­

jantx diodes

Abstract: 4833
Contextual Info: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type

3140 rectifier

Abstract: 1N5831 1N5b 1N5830 1N5829
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 1N5829 1N5830 1N5831 D esigner's D ata S h eet S w it c h m o d e P o w e r R e c tifie r s . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

D1499

Abstract: emitter phototransistor til 31 TIL119A TIL113 TL113
Contextual Info: TIL113, TIL119A OPTOCOUPLERS D 1 4 9 9 , AU G U ST 1 9 8 1 -R E V IS E D JUNE 1989 Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Darlington-Connected Phototransistor High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA

CA3080T

Abstract: ed 3b diod a 3140 12 diod full wave bridge rectifier ic BA 10B FULL WAVE RECTIFIER a3140 CA3130 ica ca3130 ca 3140a a3140 equivalent
Contextual Info: CA3140, CA3140A Semiconductor September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational am plifiers that com bine the advantages of high voltage PM O S transistors with high voltage bipolar transistors on a single

CD4013 equivalent

Abstract: AN6818
Contextual Info: S CA3280, CA3280A Dual, 9MHz, O perational T ran sco n d u ctan ce Am plifier OTA November 1996 Features Description • Low Initial Input Offset Voltage: 500|iV (Max) (CA3280A) he C A3280 and CA3280A types consist of two variable operational am plifiers that are designed to substantially reduce

ba13002f

Abstract: 2U diode
Contextual Info: BA13002F Driver, 6-channel, high current The BA13002F is a high current transistor array consisting of six Darlingtonconfigured transistor circuits. Dimensions Units : mm BA13002F (SOP16) The necessary surge-absorbing diodes and base current-control resistors are

BS 6360

Abstract: jd 1801 DO-203AA 2U3A
Contextual Info: Bulletin 12018/A International US Rectifier 2s f <r s e r ie s STANDARD RECOVERY DIODES Stud Version Features 25 A • High surge c u rre n t ca p a b ility ■ A va la n ch e ty p e s a va ila b le ■ S tud cath ode and stud a n o d e version ■ W id e cu rre n t range

MR1376

Contextual Info: MO TO RO LA SC D IO DE S / O P T O b4E D • b 3 b 7 SS S 0Dflb22fci flflT * 1 1 0 1 7 1N3889 thru 1N3893 MR1376 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N3891 and MR1376 are Motorola Preferred Devices l)a (a Sheol STUD M O UNTED FAST REC O V ER Y POWER R EC TIFIE R S

IN3893

Abstract: MR1376 Diode Motorola 316 15 Amp current 1000 volts metal diode 245A-02 high power fast recovery diodes 1N3889 1N3890 AMP 110 REC 1N3892
Contextual Info: MO TO RO LA SC D IO DE S / O P T O b4E D • b 3 b 7 SS S 0Dflb22fci flflT * 1 1 0 1 7 1N3889 thru 1N3893 MR1376 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N3891 and MR1376 are Motorola Preferred Devices l)a(a S h e o l STUD M O UNTED FAST REC O V ER Y POWER R EC TIFIE R S

diod t4

Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
Contextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

GA400TD25S

Contextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

MC14461

Abstract: MC14462 ion chamber
Contextual Info: MOTOROLA MC14461 MC14462 SMOKE DETECTOR C IR C U IT The MC14461 and MC14462 are smoke detector circuits fabricated using M otorola's standard CMOS process. The MC14461 CMOS MSI has the detector inp u t w ith the standard CMOS static p rotection. The MC14462 has an unprotected CMOS {MOSFET inp u t which

GA3140

Abstract: a3140 TL 555c AM TL 555c 741 LEM ca3140ab
Contextual Info: {Sì h a r r is CA3140, CA3140A S E M I C O N D U C T O R w m w " ^ 7 m w 4.5MHz, B iM O S Operational Amplifier with M O S F E T I n p u t / B i p o l a r O u t p u t N ovem ber 1996 F e a tu re s D e s c rip tio n • M O S F E T I nput S ta ge The CA3140A and CA3140 are integrated circuit operational ampli­

MTP30N08M

Abstract: AN569 MC34129 sensefet high voltage current mirror mosfet current mirror 314B03
Contextual Info: M O T O R O L A SC X S T R S / R F b 3 b 7 2 5 4 □ Ü ‘iô7ô4 ôTl • MOTb bflE » MOTOROLA SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor IM-Channel Enhancement-Mode Silico n Gate w ith Current Sensing Capability TM OS S E N S E F E T DEVICE

SFH302

Abstract: SFH203 IRF 426
Contextual Info: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Outline drawings in mm Maßbilder (in mm) Figure 1 S u r 'a c e no* f la t in i Ö! °! Q .8 n a x ° G 1 GND 9.0 y t ' 0.5 S. ¡ 5.9 7.8 7.5 oo m ö o ¡ f t 1 C athode

Western Electric Diode

Abstract: Sprague Electric 4-0308 UCN-5825B 8452 UCN5825B
Contextual Info: á S f& h W M ' UCN-5825B UCN-5826B SPRAGUE TH E M ARK O F R E L IA B IL IT Y Integrated Circuits UCN-5825B AND UCN-5826B BiMOS II HIGH-CURRENT, SERIAL-INPUT, LATCHED DRIVERS FEATURES c lo c k • • • • • • • • • 2 A Open Collector Outputs

bzp 650 c10

Abstract: bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24
Contextual Info: NAUKOWO- PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç é é I ELEMENTY DYSKRETNE Warszawa 1983 r. SPI S TRECCI Str. Od Wydawcy .

Contextual Info: LT1083/LT1084/LT1085 7.5A, 5A, 3A Low Dropout Positive Adjustable Regulator Semiconductor [description i T he LT1083 series of positive adjustable regulators regulator and power source are designed to provide 7.5A, 5A and 3A with conditions. The LT1083/LT1084/LT1085

4007A

Abstract: staircase generator ca3600 CA 3140 OP AMP GA3080 CA5160AE
Contextual Info: ¡as H a r r is CA5160, CA5160A S E M I C O N D U C T O R w N OT R E C O M M E N D E D F OR N E W D E S I G N S N ovem ber 1996 m 7 " ^ m Æ 4M Hz, B iM O S M ic ro processor Operational A m p l i f i e r s with M O S F E T I n p u t / C M O S O u t p u t

Katalog CEMI

Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby