DIOD 20A 600V Search Results

STTA2006M

Abstract: smd transistor p3
Contextual Info: f Z 7 SCS-THOMSON Ä 7#@¡*fô smi(g¥[MO S _ STTA2006M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av 20A V rrm 600V trr (typ) 30ns V f (max) 1.5 V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.

Contextual Info: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor

400HZ

Abstract: IRGBC20SD2 igbt 200V 5A t4vd
Contextual Info: PD-9.1544 IRGBC20SD2 PROVISIONAL Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Switching-loss rating includes all 'tail' losses • HEXFREDTM soft ultrafast diodes • Optimized for line frequency operation to 400HZ

irg4bc40u

Abstract: transistor IR 840 ED50I
Contextual Info: PD - 9.1456D IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRGBC20SD2

Abstract: RY-W 400HZ
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1544 IRGBC20SD2 PROVISIONAL Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Switching-loss rating includes all 'tail' losses • HEXFREDTM soft ultrafast diodes

IRG4PC40U

Abstract: E4020
Contextual Info: PD - 9.1466D IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC40U

Contextual Info: PD - 9.1466C IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC40U

Abstract: S3000
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1466C IRG4PC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching a pp li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor

ROHM BP5053-12 circuit diagrams

Abstract: BP5053-12 CMF01 311VDC
Contextual Info: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C

Contextual Info: MITSUBISHI IGBT MODULES CM10MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-12H t/ • ' X lili — li, W sm * \ mM 1 '1C. 10A 1V c e s . 600V

BP5053-12

Abstract: ROHM BP5053-12 circuit diagrams TOSHIBA DIODE CATALOG TOP MARKING C1 ROHM ZNR 20 CMF01 diod 20a 600v rectifier diod 250 A ZNR Power
Contextual Info: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C

transistor 415

Abstract: diode 500A transistor working principle STTA806D AN-603 STTA2006P transistor 600v 500a transistor 2N2
Contextual Info:  APPLICATION NOTE TURBOSWITCH TM IN A PFC BOOST CONVERTER B. Rivet 1.INTRODUCTION 2.PARAMETERS DEFINITION SGS-THOMSON offers two families of 600V ultrafast diodes TURBOSWITCH”A” and ”B” having different compromises between the forward c h a ra ct e ris t ic s a n d t h e re v e rs e re c ov ery

Contextual Info: PD - 94383 IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

50DY24H

Abstract: 50DY-24H
Contextual Info: MITSUBISHI IGBT MODULES CM50DY-24H MEDIUM POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching app lica ­ tions. Each m odule consists of tw o IGBTs in a half-bridge configuration w ith each tra n sisto r having a reverse-connected su pe r-fa st recov­

ST diod

Abstract: Diode IOR 10 dc
Contextual Info: | . I PD- 5041 In terna tional TOR Rectifier preliminary CPV364M4 U IGBT SIP MODULE UltraFast IGBT Features • • • • Fully isolated printed circu it board m ount package S w itch in g-lo ss rating includes all "tail" losses HEXFRED so ft u ltra fa st diod es

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

IRF9460

Abstract: irfp460 ir2110 mosfet IRF450 IR2110 dc motor ir2110 class d amp ir2110 with calculations for 3 phase inverter ir2110 with calculations for inverter irfp460 inverter IR2110 buck Class d IR2110
Contextual Info: Index INT990 Application Characterization of IGBTs HEXFRED is a trademark of International Rectifier Topics Covered: Gate drive for IGBTs Safe Operating Area Conduction losses Statistical models Switching losses Device selection and optimization Spreadsheets to calculate power losses and junction temperature

MOSFET 4407

Abstract: IRF9460 ir2110 class d amp irfp460 ir2110 AN-941 IRFP450 inverter irfp450 mosfet full bridge ir2110 with calculations for inverter full bridge ir2110 4407 mosfet
Contextual Info: INT990 Application Characterization of IGBTs HEXFRED is a trademark of International Rectifier Topics Covered: Gate drive for IGBTs Safe Operating Area Conduction losses Statistical models Switching losses Device selection and optimization Spreadsheets to calculate power losses and junction temperature

MOSFET 4407

Abstract: ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110
Contextual Info: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1

IRF9460

Abstract: ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F
Contextual Info: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance