DIE PRODUCTS Search Results

Contextual Info: Application Note Switch Die Measurement Fixture Rev 0 RELEVANT PRODUCTS • calibration structure and the other 24 elements are used to measure die. Figure 1 illustrates a measurement element for a single pole, double throw SPDT switch die. All ANADIGICS Switch Die

Contextual Info: DIE PRODUCTS B U R R -B R O W N * E 0PA2111 DIE ] Dual, Low Noise, Precision Difet OPERATIONAL AMPLIFIER DIE FEATURES DESCRIPTION • • • • • • The OPA2111 die is a high-precision monolithic Dlfet Dielectrically isolated FET operational ampli­

Contextual Info: DIE PRODUCTS BURR-BROWN* •B B OPA633 DIE I High Speed Buffer AMPLIFIER DIE FEATURES DESCRIPTION • • • • The OPA633 die is a monolithic unity-gain buffer am­ plifier featuring very wide bandwidth and high slew rate. A dielectric isolation process incorporating both

LRIS64K

Abstract: DSASW003741
Contextual Info: TN0193 Technical note LRIS64K bumped die description Product information • Product name: LRIS64K Wafer and die features July 2010 Wafer diameter: 8 inches Wafer thickness: 180 µm Die identification: M24RF64A1 Die finishing front side : SiO2 Die finishing (back side):

Contextual Info: DIE PRODUCTS BURR-BROW N* [ DAC703 DIE 1 Current Output 16-BIT DIGITAL-TO-ANALOG CONVERTER DIE FEATURES • HIGH ACCURACY • MONOTONIC AT 14 BITS OVER FULL MILITARY TEMPERATURE RANGE DIE TOPOGRAPHY 23 22 21 20 191817 _ _ 16 15 14 13 12 11 3 PAD 1 2 3 4 5

SPANSION date code format

Abstract: AM29 T0003 Am29f 405 gde 8 905 959 252
Contextual Info: ‹ Chapter 8 Die and Wafer Shipments CHAPTER 8 DIE AND WAFER SHIPMENTS Introduction Product Carrier Guide for Die and Wafers Storage Conditions for Die and Wafer Carrier Designs for Singulated Die Waffle Pack Surftape and Reel Carrier Designs for Wafers Wafer Jar

MPY534

Abstract: Sd 602
Contextual Info: BURR-BROÜJN CORP h e d 17313b5 I 0 0 1 S S 27 - :-:- 4 ~T L ' T ï n T R? .r°V T | -7LPI DIE PRODUCTS - MPY534 DIE l,= B i Precision ANALOG MULTIPLIER DIE DESCRIPTION

Contextual Info: Die Products Die Products FEATURES Xicor die products are designed and tested for applications requiring extended endurance. Data retention is specified to be greater than 100 years. • High Performance Advanced CMOS Technology • 0°C to 70°C Operating Temperature

Contextual Info: DIE PRODUCTS BURR-BROW N* [ INA110 DIE 1 Fast-Settling FET-lnput Very-High Accuracy INSTRUMENTATION AMPLIFIER DIE FEATURES APPLICATIONS • • • • • FAST SCANNING RATE MULTIPLEXED INPUT DATA ACQUISITION SYSTEM AMPLIFIER • FAST DIFFERENTIAL PULSE AMPLIFIER

p280

Contextual Info: Supertex inc. Package and Die Options DIP Plastic N6, P (N8) (NC) Die with gold bumping Uncut wafers (BW) Waffle pack (BX) Die in Wafer Form (NW, XW) Die on adhesive tape (NJ, XJ) Die in Waffle Pack (ND, X) J-Lead Chip Carrier Plastic (PJ) Ceramic (DJ) SO Package (NG)

Contextual Info: HE DIE PRODUCTS ’R - b r o q j n c o r p D |l7313bS D O l S S H b fi I T -T M ^ - BURR-BROWN OPA2111 DIE •e b b m Dual, Low Noise, Precision Difet® OPERATIONAL AMPLIFIER DIE FEATURES DESCRIPTION • • • • The OPA2111 die is a high-precision monolithic

MIL-STD-883 Method 2010

Contextual Info: M Die Information Micro Power Systems Micro Power Systems offers a wide variety of standard products in die form. This new section contains a data sheet for each product available in die form, with specific ordering information, electrical specifications, and

K4S561632E

Abstract: K4S560432E K4S560432E-TC K4S560832E
Contextual Info: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM

K4S280432E

Abstract: K4S281632E TL 2262 decoder
Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM

K4S281632F-TCL60

Contextual Info: SDRAM 128Mb F-die x4, x8, x16 Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 November. 2003 SDRAM 128Mb F-die (x4, x8, x16)

K4S280432F

Abstract: K4S281632F K4S281632F-TC
Contextual Info: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.0 January. 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January. 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM

K4S1G0732B

Abstract: K4S1G0732B-TC75 RA12
Contextual Info: SDRAM stacked 1Gb B-die x8 CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) CMOS SDRAM

K4S511632B

Abstract: K4S510432B-TC
Contextual Info: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM

K4S641632H

Abstract: K4S641632H-TC K4S640432H-TC K4S640832H
Contextual Info: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.5 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 February 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM

Contextual Info: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.0 September 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 September 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM

K4S280432F

Abstract: K4S281632F
Contextual Info: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM

K4S510732E

Abstract: RA12 54pin TSOP SDRAM
Contextual Info: SDRAM stacked 512Mb E-die x4, x8 CMOS SDRAM stacked 512Mb E-die SDRAM Specification Revision 1.0 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 February 2004 SDRAM stacked 512Mb E-die (x4, x8)

K4S560432E

Abstract: K4S560432E-NC K4S560832E RA12
Contextual Info: SDRAM 256Mb E-die x4, x8 x8 CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.1 February. 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February, 2004 SDRAM 256Mb E-die (x4, x8

M14C04

Contextual Info: M14C04 DD M14C04 Die Description PRODUCT • WAFER SIZE M14C04 152 mm 6 inches ■ DIE IDENTIFICATION M14C04KA_R ■ DIE SIZE (X x Y) 1465 x 1585 µm ■ SCRIBE LINE 101.6 x 101.6 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)