DIE PRODUCTS Search Results

Contextual Info: DIE PRODUCTS B U R R -B R O W N * E 0PA2111 DIE ] Dual, Low Noise, Precision Difet OPERATIONAL AMPLIFIER DIE FEATURES DESCRIPTION • • • • • • The OPA2111 die is a high-precision monolithic Dlfet Dielectrically isolated FET operational ampli­

Contextual Info: DIE PRODUCTS BURR-BROWN* •B B OPA633 DIE I High Speed Buffer AMPLIFIER DIE FEATURES DESCRIPTION • • • • The OPA633 die is a monolithic unity-gain buffer am­ plifier featuring very wide bandwidth and high slew rate. A dielectric isolation process incorporating both

Contextual Info: DIE PRODUCTS BURR-BROW N* [ DAC703 DIE 1 Current Output 16-BIT DIGITAL-TO-ANALOG CONVERTER DIE FEATURES • HIGH ACCURACY • MONOTONIC AT 14 BITS OVER FULL MILITARY TEMPERATURE RANGE DIE TOPOGRAPHY 23 22 21 20 191817 _ _ 16 15 14 13 12 11 3 PAD 1 2 3 4 5

Contextual Info: DIE PRODUCTS BURR-BROW N* [ INA110 DIE 1 Fast-Settling FET-lnput Very-High Accuracy INSTRUMENTATION AMPLIFIER DIE FEATURES APPLICATIONS • • • • • FAST SCANNING RATE MULTIPLEXED INPUT DATA ACQUISITION SYSTEM AMPLIFIER • FAST DIFFERENTIAL PULSE AMPLIFIER

p280

Contextual Info: Supertex inc. Package and Die Options DIP Plastic N6, P (N8) (NC) Die with gold bumping Uncut wafers (BW) Waffle pack (BX) Die in Wafer Form (NW, XW) Die on adhesive tape (NJ, XJ) Die in Waffle Pack (ND, X) J-Lead Chip Carrier Plastic (PJ) Ceramic (DJ) SO Package (NG)

MIL-STD-883 Method 2010

Contextual Info: M Die Information Micro Power Systems Micro Power Systems offers a wide variety of standard products in die form. This new section contains a data sheet for each product available in die form, with specific ordering information, electrical specifications, and

K4S561632E

Abstract: K4S560432E K4S560432E-TC K4S560832E
Contextual Info: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM

K4S280432E

Abstract: K4S281632E TL 2262 decoder
Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM

K4S643232H

Abstract: K4S643232
Contextual Info: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History

K4S1G0732B

Abstract: K4S1G0732B-TC75 RA12
Contextual Info: SDRAM stacked 1Gb B-die x8 CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) CMOS SDRAM

K4S511632B

Abstract: K4S510432B-TC
Contextual Info: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM

K4S641632H

Abstract: K4S641632H-TC K4S640432H-TC K4S640832H
Contextual Info: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.5 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 February 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM

Contextual Info: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.0 September 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 September 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM

outsourcing IBM

Abstract: avnet celestica flextronics national semiconductor CC
Contextual Info: Considerations in Converting from SMT to Die Assemblies National Semiconductor Technical Seminar Series Die Product Business Unit June 26 2003 1 Approaches, Options & Solutions • Die conversion trends and drivers • Die interconnect approaches • Device and information resources

Contextual Info: DIE PRODUCTS BURR-BROW N* INAI 01 DIE 1 E Very High Accuracy INSTRUMENTATION AMPLIFIER DIE FEATURES DESCRIPTION • LOW OFFSET VOLTAGE • HIGH INPUT IMPEDANCE: 1010fi • LOW NOISE: 13nV/Vfiz at f0 = 1kHz The INA101AD is a high accuracy, monolithic instru­

89734

Contextual Info: DIE PRODUCTS BURR-BROWN» [ MPY534 DIE ] Precision ANALOG MULTIPLIER DIE DESCRIPTION The MPY534 is a high accuracy, general purpose fourquadrant analog multiplier. Its laser trimmed accuracy makes it easy to use in a variety o f applications requiring a multiplier transfer function. Differential X,

Contextual Info: DIE PRODUCTS BURR-BROW N* E HI-506 DIE 1 Single-Ended 16-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING • ANALOG SIGNAL RANGE: ±15V

Analog Devices space qualified

Contextual Info: This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein. The manufacturing flow described in the STANDARD DIE PRODUCTS PROGRAM brochure at

K4S281632F-UC(L)75

Abstract: K4S280432F K4S280432F-UC K4S281632F
Contextual Info: CMOS SDRAM SDRAM 128Mb F-die x4, x8, x16 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.2 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16)

Contextual Info: Instruction Sheet SDE Crimping Die Assemblies 91902-1, 91907-[ ], 91908-1, 91909-1, 91910-[ ], and 1424050-1 Die Retaining Die Retaining Screw Pin Qty: 2 Indenter Dies Ferrule Crimping Chamber Chamfered Edges 408-8580 05 MAY 08 Rev B 2. DESCRIPTION Each four–piece die assembly consists of two

LMC-1500

Abstract: lmc10 8125
Contextual Info: CUSTOM AND SPECIALTY PRODUCTS Die-Cut Overlaminates Die-cut overlaminate labels are sized to fit popular dot matrix, thermal transfer and laser label sizes. Liners are backslit for easy overlaminate removal. Die-cut overlaminates are produced in B-103 clear polyester, a good generalpurpose and PC board overlaminate that withstands high temperatures, dirt, oil

seam seal process

Abstract: LMC7255 Minco Products PC16552 LMC668
Contextual Info: N ANALYSIS OF VOLUME NO. 6 2000 DIE ASSEMBLY TECHNIQUES CONTENTS PAGE 1 ystem and board manufacturers that use bare die or flip-chip – such as National Semiconductor’s Die Products – have access to a wide variety of assembly methods that will produce high yield, high reliability systems. The following review of

Contextual Info: DIE PRODUCTS DAC811 DIE B U R R -B R O W N « H H Microprocessor-Compatible 12-BIT DIGITAL-T0 -ANALOG CONVERTER DIE The D A C 8II is a com plete single-chip integrated circuit m icrocom puter-com patible 12-bit digital-toan alo g converter. T he chip includes a precision volt­

ut9q512k32e

Abstract: UT9Q512E UT9Q512K32 UT9Q512 MCM 2 UT8Q512 UT8Q512K32 SRAM
Contextual Info: April 16, 2007 Dear Customer: The purpose of this letter is to update you on the die inventory of our 5V 4M SRAM Quantified Commercial-Off-The Shelf QCOTSTM used in the UT9Q512 and UT9Q512K32 products. In June 2005 we announced the finite supply of the commercial die source would exhaust in 6 to 8 months. The die