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    DIDA BRIDGE Search Results

    DIDA BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet
    TCK127BG
    		Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1 to 5.5 V, 1 A, Auto-discharge, WCSP4G Datasheet
    TCK128BG
    		Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1 to 5.5 V, 1 A, Auto-discharge, WCSP4G Datasheet

    DIDA BRIDGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FET MOSFET transistor ""

    Abstract: AN569 MTB1306 dida bridge "DIDA" motorola
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MTB1306/D DATA Advance Information HDTMOS E-FET ‘M High Density Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die


    Original     		MTB1306/D OW1-2447 602-2H609 OG7741848 MTB1306~ FET MOSFET transistor "" AN569 MTB1306 dida bridge "DIDA" motorola PDF

    dida

    Contextual Info: 2 4 A A 1 6 M ic r o c h ip 16K 1.8V CMOS Serial EEPROM FEATURES PACKAGE TYPE DIP • Single supply with operation down to 1,8V • Low power CMOS technology AO C 1 8 U Vcc - 1 m A active current typical - 10 pA standby current typical at 5.5V - 3 nA standby current typical at 1.8V


    OCR Scan     		PDF