DIA DB3 Search Results

Contextual Info: RECTRON DB3 SEMICONDUCTOR TECHNICAL SPECIFICATION TRIGGER DIODES FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current DO-35 DESCRIPTION .022 0.56 DIA. .018 (0.46) High reliability glass passivation insuring parameter stability and protection against junction contamination

100HZ

Contextual Info: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION DO- 41 FEATURES 150 mW DO-35 GLASS ●Three way layer two terminal, axial lead , hermetically sealed diacs are designed specifically for .034(0.9) DIA .028(0.7) triggering thyrisitors .The demonstrate low breakover current.

A-405

Contextual Info: DB3 BIDIRECTIONAL TRIGGER DIODE Reverse Voltage - 32 Volts DO-41 0.107 2.7 0.080 (2.0) DIA. FEATURES A-405 1.0 (25.4) MIN. Power: 150mW The plastic package VBO:28-36V version Low breakover current High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length,

Contextual Info: LLDB3 BIDIRECTIONAL TRIGGER DIODE Features MINI MELF LL-34 ● VBO : 32V ● Breakover voltage range : 28 to 36V 0.063(1.6) 0.055(1.4) DIA. 0.020(0.5) 0.012(0.3) 0.020(0.5) 0.012(0.3) 0.146(3.7) 0.130(3.3) Applications Functioning as a trigger diode with a fixed voltage

Intel i860

Contextual Info: INTEL CORP UP/PRPHLS bflE » • 4ñ2bl7S Dia^flSb in te i i860 XR 64-BIT MICROPROCESSOR ■ Parallel Architecture that Supports Up to Three Operations per Clock — One Integer or Control Instruction per Clock — Up to Two Floating-Point Results per

Contextual Info: SIYU R DB3 双向触发二极管 SILICON BIDIRECTIONAL DIAC 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage 1.0 25.4 MIN ・较强的正向浪涌承受能力 High forward surge capability .034(0.9) DIA .028(0.7) ・高温焊接保证 High temperature soldering guaranteed:

Contextual Info: Low Mating Force daughter board connector +.005 .096 –.000 DIA. 2 SIDES A B .010 M -D- AA .115 H .285 ±.005 C J K Y D M MINUS .010 .220 x .075 DEEP 2 PLACES FOR HEX NUT .187 MAX. ACROSS FLATS, .205 MIN. ACROSS CORNERS -Y- +.005 .075 –.000 REF .020 M

Contextual Info: Low Mating Force daughter board connector +.005 .096 –.000 DIA. 2 SIDES A B .010 M -D- AA .115 H .285 ±.005 C -Y- J +.005 .075 –.000 REF K Y D M MINUS .010 .220 x .075 DEEP 2 PLACES FOR HEX NUT .187 MAX. ACROSS FLATS, .205 MIN. ACROSS CORNERS .020 M

Contextual Info: Low Mating Force daughter board connector +.005 .096 –.000 DIA. 2 SIDES A B .010 M -D- AA .115 H .285 ±.005 C -Y- J +.005 .075 –.000 REF K Y D M MINUS .010 .220 x .075 DEEP 2 PLACES FOR HEX NUT .187 MAX. ACROSS FLATS, .205 MIN. ACROSS CORNERS .020 M

ld 7522 ps

Abstract: LD 7522
Contextual Info: CMOS 10-Bit, Buffered Multiplying D/A Converter ANALOG DEVICES AD7522 AD7522 F U N C T IO N A L BLO C K DIA G RA M FEATURES 10-Bit Resolution 8-, 9- & 10-Bit Linearity Microprocessor Compatible Double Buffered Inputs Serial or Parallel Loading D T L /T T L /C M O S Direct Interface

g2021

Contextual Info: ANALOG DEVICES 1 4 -Bit, 100 M SPSf TxDAC * [> A C o n v erter AD9764 F U N C T IO N A L BLOCK DIA G R AM FEATURES M em ber of Pin-Com patible TxDAC™ Product Family 125 MSPS Update Rate 14-Bit Resolution Excellent SFDR and IM D D ifferential Current Outputs: 2 mA to 20 mA

diac db3

Abstract: DIA DB3 db3 diac 220v motor speed control circuit with scr diac 083 10KW R20W DB3 diode DIAc DB4
Contextual Info: SIGNAL BIDIRECTIONAL DIAC DB3 / DB4 Features The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover

diac DB3 Do 41

Abstract: DIAC DB3 DO-41 VOLTAGE36-70V DIAC DB3 EQUIVALENT thyristor motor speed control circuit 202E
Contextual Info: CHONG PINGYANG ELECTRONICS CO.,LTD. DB3 THRU DB6 SILICON BIDIRECTIONAL DIAC VOLTAGE：36-70V CURRENT：2.0A FEATURES DO-41 Plastic passivalted three-layer for triggering thyristors. Low breakover current at breakover voltage. For use in thyristor phase-control circuit for

Contextual Info: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION 150 mW DO- 41 FEATURES ●Three way layer two terminal, axial lead , hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts DB3,DB4

diode DB3

Abstract: db6 do-35 diac 083 diagram DC34
Contextual Info: DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC FEATURE DO-35 GLASS The three layer ,two terminal,axial lead,hermetically sealed diacs are designed specifically for triggering thyristors.They 0.079(2.0) MAX demonstrate low breakover current at breakover voltage as

Contextual Info: SIYU R DB3 双向触发二极管 SILICON BIDIRECTIONAL DIAC 特征 Features DO-41 •反向漏电流低 1.0 25.4 MIN .205(5.2) .166(4.2) Low reverse leakage ·高温焊接保证 High temperature soldering guaranteed: 260℃/10 秒, 0.375" (9.5mm)引线长度。

DIODE T25 4 bo

Abstract: DIACS DC34 Bidirectional Diode Thyristors DIODE T25-4-bo
Contextual Info: R DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC SEMICONDUCTOR DO-35 GLASS FEATURES The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover 1.083(27.5) MIN current at breakover voltage as they withstand peak pulse current, The breakover

DB3-222

Abstract: DB3-471
Contextual Info: STANDARD POWER INDUCTORS - THRU HOLE DB3 DB3LF* TRADITIONAL Pb RoHS COMPLIANT Wirewound, Power Line Choke, Radial PART NUMBER L µH @ 1 kHz DCR OHMS MAX SATURATION CURRENT A DC FERRITE CORE DB3-331† 3.3 0.002 74.0 DB3-471† 4.7 0.003 54.0 DB3-561† 5.6

DB3336LW1

Contextual Info: 33 TO 36 GHz SINGLE-BALANCED MIXER MODEL: DB3336LW1 FEATURES • RF coverage . 33 to 36 GHz • IF operation . DC to 2 GHz • LO power range . +7 to +13 dBm • RF-to-IF isolation. 25 dB typical • Input 1 dB comp. . +5 dBm typical

Contextual Info: 33 TO 36 GHz DOUBLE-BALANCED MIXER MODEL: DB3336LW1 FEATURES • RF coverage. 33 to 36 GHz • IF operation . DC to 2 GHz • LO power range . +7 to +13 dBm • RF-to-IF isolation . 25 dB typical • Input 1 dB comp. . +5 dBm typical

Contextual Info: DIOTEC ELECTRONICS CORP SfiE D I SfiMTlD? OODOllb 57b • DIX DIOTEC ELECTRONICS CORP. m Data Sheet No.: BRDB-3500P-A ABDB-3500P-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 DB3500P/ADB3500P Serle» 35 AMP SILICON BRIDGE RECTIFIERS

TRANSISTOR+BC+545

Abstract: DATASHEET+TRANSISTOR+BC+545
Contextual Info: Low Mating Force daughter board connector ♦.005 .075 " 0 0 0 REF »j YlDljw MINUS .010 i a . 0 20 .220 X.075 DEEP 2 PLACES FOR HEX NUT .187 MAX ACROSS FLATS, .205 MIN ACROSS CORNERS) .056 ±005 MATES WITH MB AND PC SERIES CONNECTORS Contact Data Notes:

Contextual Info: omRon. B3W Mechanical Keyswitch Mechanical Keyswitch with Sealed Construction for Automatic Soldering • Available in two sizes: 6 mm square and 12 mm square ■ Snap-action contact mechanism assures short key stroking and a sharp click to confirm input ■

2SK146

Abstract: IFN146
Contextual Info: E5 9 -9 7 IFN 146 DUAL N -CH AN N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE AUDIO AMPLIFIER ♦ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current